Wavy Cantilever RF-MEMS Switch based on Bidirectional Control of Intrinsic Stress

Saleh, Heba; Bajwa, Rayan; Tekin, İbrahim; Yapıcı, Murat Kaya

doi:10.1109/eurosime48426.2020.9152742

Cited by 3 publications

(5 citation statements)

References 9 publications

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“…This parameter plays a pivotal role in various MEMS applications, influencing the reliability and precision of the device operation. Engineers meticulously optimize the release voltage by considering factors such as electrode geometry, distance between electrodes, and material properties [45,46]. Striking the right balance in the release voltage is essential to avoid issues like excessive power consumption, potential damage, or incomplete release, ensuring the optimal performance and longevity of electrostatic MEMS devices.…”

Section: Actuation Voltagementioning

confidence: 99%

MEMS Switch Realities: Addressing Challenges and Pioneering Solutions

Kurmendra,

Agarwal

2024

Micromachines

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Micro-Electro-Mechanical System (MEMS) switches have emerged as pivotal components in the realm of miniature electronic devices, promising unprecedented advancements in size, power consumption, and versatility. This literature review paper meticulously examines the key issues and challenges encountered in the development and application of MEMS switches. The comprehensive survey encompasses critical aspects such as material selection, fabrication intricacies, performance metrics including switching time and reliability, and the impact of these switches on diverse technological domains. The review critically analyzes the influence of design parameters, actuation mechanisms, and material properties on the performance of MEMS switches. Additionally, it explores recent advancements, breakthroughs, and innovative solutions proposed by researchers to address these challenges. The synthesis of the existing literature not only elucidates the current state of MEMS switch technology but also paves the way for future research avenues. The findings presented herein serve as a valuable resource for researchers, engineers, and technologists engaged in advancing MEMS switch technology, offering insights into the current landscape and guiding future endeavors in this rapidly evolving field.

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Section: Actuation Voltagementioning

confidence: 99%

MEMS Switch Realities: Addressing Challenges and Pioneering Solutions

Kurmendra,

Agarwal

2024

Micromachines

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“…At this stage, the equivalent surrogate models acquired for the design objectives of the switch were subjected to the optimizer, and multi-objective optimization was performed. Essentially, the effects of geometrical parameters of the switch on the corresponding RF isolation and actuation voltage values are contradictory to each other, which creates a nontrivial trade-off in electrostatic MEMS switch design process [3]. For example, an increased air gap between the switch beam and the underlying electrode improves the RF isolation, but at the cost of higher actuation voltage [3].…”

Section: Multi-objective Optimizationmentioning

confidence: 99%

“…Essentially, the effects of geometrical parameters of the switch on the corresponding RF isolation and actuation voltage values are contradictory to each other, which creates a nontrivial trade-off in electrostatic MEMS switch design process [3]. For example, an increased air gap between the switch beam and the underlying electrode improves the RF isolation, but at the cost of higher actuation voltage [3]. Accordingly, we first identified the pareto optimal points for RF isolation and actuation voltage for the considered electrostatic series MEMS switch using a non-dominated sorting algorithm, and this optimization scenario can be formulated as: Notably, in order to ensure a mechanically robust design, the maximum stress at the switch anchors was constrained below the yield strength of the switch material (gold).…”

Section: Multi-objective Optimizationmentioning

confidence: 99%

“…Therefore, along with better performing active circuitry, high-performance RF passive components have also become a key to realize any modern-day RFIC transceiver. Unfortunately, owing to inherent technological limitations, RF passive devices based on standard IC fabrication techniques face a large number of losses (e.g., substrate proximity loss), and hence restrict the overall performance of RFICs [1][2][3]. On the other hand, the field of MEMSs (microelectromechanical systems) has surfaced as a potential substitute for fabricating integrated high-performance on-chip RF passive components using advanced micromachining techniques [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

“…Unfortunately, owing to inherent technological limitations, RF passive devices based on standard IC fabrication techniques face a large number of losses (e.g., substrate proximity loss), and hence restrict the overall performance of RFICs [1][2][3]. On the other hand, the field of MEMSs (microelectromechanical systems) has surfaced as a potential substitute for fabricating integrated high-performance on-chip RF passive components using advanced micromachining techniques [1][2][3][4]. MEMS-based RF passives (i.e., inductors, tunable capacitors, switches, transformers, phase shifters, etc.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Machine Learning-Based Modeling and Generic Design Optimization Methodology for Radio-Frequency Microelectromechanical Devices

Bajwa

Yapıcı

2023

Sensors

Self Cite

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RF-MEMS technology has evolved significantly over the years, during which various attempts have been made to tailor such devices for extreme performance by leveraging novel designs and fabrication processes, as well as integrating unique materials; however, their design optimization aspect has remained less explored. In this work, we report a computationally efficient generic design optimization methodology for RF-MEMS passive devices based on multi-objective heuristic optimization techniques, which, to the best of our knowledge, stands out as the first approach offering applicability to different RF-MEMS passives, as opposed to being customized for a single, specific component. In order to comprehensively optimize the design, both electrical and mechanical aspects of RF-MEMS device design are modeled carefully, using coupled finite element analysis (FEA). The proposed approach first generates a dataset, efficiently spanning the entire design space, based on FEA models. By coupling this dataset with machine-learning-based regression tools, we then generate surrogate models describing the output behavior of an RF-MEMS device for a given set of input variables. Finally, the developed surrogate models are subjected to a genetic algorithm-based optimizer, in order to extract the optimized device parameters. The proposed approach is validated for two case studies including RF-MEMS inductors and electrostatic switches, in which the multiple design objectives are optimized simultaneously. Moreover, the degree of conflict among various design objectives of the selected devices is studied, and corresponding sets of optimal trade-offs (pareto fronts) are extracted successfully.

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Nonlinear restructuring of patterned thin films by residual stress engineering into out-of-plane wavy-shaped electrostatic microactuators for high-performance radio-frequency switches

Bajwa¹,

Saleh²,

Shojaeian³

et al. 2023

Microsyst Nanoeng

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Electrostatic microelectromechanical (MEMS) switches are the basic building blocks for various radio-frequency (RF) transceivers. However, conventional cantilever-based designs of MEMS switches require a large actuation voltage, exhibit limited RF performance, and suffer from many performance tradeoffs due to their flat geometries restricted in two dimensions (2D). Here, by leveraging the residual stress in thin films, we report a novel development of three-dimensional (3D) wavy microstructures, which offer the potential to serve as high-performance RF switches. Relying on standard IC-compatible metallic materials, we devise a simple fabrication process to repeatedly manufacture out-of-plane wavy beams with controllable bending profiles and yields reaching 100%. We then demonstrate the utility of such metallic wavy beams as RF switches achieving both extremely low actuation voltage and improved RF performance owing to their unique geometry, which is tunable in three dimensions and exceeds the capabilities of current state-of-the-art flat-cantilever switches with 2D-restricted topology. As such, the wavy cantilever switch presented in this work actuates at voltages as low as 24 V while simultaneously exhibiting RF isolation and insertion loss of 20 dB and 0.75 dB, respectively, for frequencies up to 40 GHz. Wavy switch designs with 3D geometries break through the design limits set by traditional flat cantilevers and provide an additional degree of freedom or control knob in the switch design process, which could enable further optimization of switching networks used in current 5G and upcoming 6G communication scenarios.

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Wavy Cantilever RF-MEMS Switch based on Bidirectional Control of Intrinsic Stress

Cited by 3 publications

References 9 publications

MEMS Switch Realities: Addressing Challenges and Pioneering Solutions

MEMS Switch Realities: Addressing Challenges and Pioneering Solutions

Machine Learning-Based Modeling and Generic Design Optimization Methodology for Radio-Frequency Microelectromechanical Devices

Nonlinear restructuring of patterned thin films by residual stress engineering into out-of-plane wavy-shaped electrostatic microactuators for high-performance radio-frequency switches

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