Weak antilocalization effect in exfoliated black phosphorus revealed by temperature- and angle-dependent magnetoconductivity

Abstract

Recently, there have increasingly been debates on whether there exists a surface resonance state (SRS) in black phosphorus (BP), as suggested by recent angle-resolved photoemission spectroscopy results. To resolve this issue, we have performed temperature- and angle-dependent magnetoconductivity measurements on exfoliated, high-quality BP single crystals. A pronounced weak-antilocalization (WAL) effect was observed within a narrow temperature range of 8-16 K, with the electrical current flowing parallel to the cleaved ac-plane (along the a- or c-axis) and the magnetic field along the b-axis. The angle-dependent magnetoconductivity and the Hikami-Larkin-Nagaoka model-fitted results have revealed that the observed WAL effect shows surface-bulk coherent features, which supports the existence of SRS in BP.

Efficient Emission in the Telecom Range from Quantum Dots Embedded in Photonic Structures Fabricated by Focused Ion Beam Milling

“…The calculated value for the SnTe layers in this study, α = −14, is considerably greater than the established theoretical values. A similarly large value, i.e., α = −16.7, was obtained by Hou et al [13] for bulk black phosphorus. This large deviation in the value of the prefactor was attributed to the presence of a three-dimensional bulk transport system [18,25].…”

“…The study of electrical transport of SCs at low temperature and high magnetic field yield intriguing physical phenomena, such as Landau quantization, integral and fractional quantum Hall effect [11]. Among them, the occurrence of a lowtemperature cusp-like shape in magnetoresistance has been previously shown for quantum wells [3], thin films [12] and bulk materials [13]. Such a physical effect is broadly categorized as either weak localization (WL) or weak anti-localization (WAL), which depends on the sign of magnetoresistance [14].…”

Low Temperature Weak Anti-Localization Effect in the GeTe and SnTe Epitaxial Layers

“…The calculated value for the SnTe layers in this study, α = −14, is considerably greater than the established theoretical values. A similarly large value, i.e., α = −16.7, was obtained by Hou et al [13] for bulk black phosphorus. This large deviation in the value of the prefactor was attributed to the presence of a three-dimensional bulk transport system [18,25].…”

“…The study of electrical transport of SCs at low temperature and high magnetic field yield intriguing physical phenomena, such as Landau quantization, integral and fractional quantum Hall effect [11]. Among them, the occurrence of a lowtemperature cusp-like shape in magnetoresistance has been previously shown for quantum wells [3], thin films [12] and bulk materials [13]. Such a physical effect is broadly categorized as either weak localization (WL) or weak anti-localization (WAL), which depends on the sign of magnetoresistance [14].…”

One-dimensional weak antilocalization effect in 1T′-MoTe2 nanowires grown by chemical vapor deposition

“…Figure 4(a) shows the magnetic-field-dependent resistivity at different temperatures. The cusp feature at around zero magnetic fields at low temperatures (<3 K) originating from the WAL effect is observed [33][34][35], which becomes more remarkable with decreasing temperatures. The temperaturedependent MR (calculated by MR = (ρ (B) − ρ (0))/ ρ (0) × 100%) of additional three devices with different diameter is shown in figure S3.…”