Weak antilocalization in Cd3As2 thin films

Zhao, Bo; Cheng, Peihong; Pan, Haiyang; Zhang, Shuai; Wang, Baigeng; Wang, Guanghou; Xiu, Faxian; Song, Fengqi

doi:10.1038/srep22377

Cited by 81 publications

(85 citation statements)

References 48 publications

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“…2(c)], followed by a positive MR at high B. Additionally, positive MR is observed in thicker films at low B. These features are strikingly similar to those reported for bulk, thin-film, and nanowire Cd 3 As 2 [6,[32][33][34], as well as other Dirac and Weyl semimetals [4,5,7,8]. We also measured much thicker films, which have higher mobilities (see Ref.…”

supporting

confidence: 85%

Negative magnetoresistance due to conductivity fluctuations in films of the topological semimetal Cd3As2

Schumann¹,

Goyal²,

Kealhofer³

et al. 2017

Phys. Rev. B

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Negative magnetoresistance due to conductivity fluctuations in films of the topological semimetal Cd3As2 Recently discovered Dirac and Weyl semimetals display unusual magnetoresistance phenomena, including a large, nonsaturating, linear transverse magnetoresistance and a negative longitudinal magnetoresistance. The latter is often considered as evidence of fermions that have a defined chirality. Classical mechanisms, due to disorder or nonuniform current injection, can, however, also produce negative longitudinal magnetoresistance. Here, we report on magnetotransport measurements performed on epitaxial thin films of Cd 3 As 2 , a three-dimensional Dirac semimetal. Quasilinear positive transverse magnetoresistance and negative longitudinal magnetoresistance are observed. By evaluating films of different thickness and by correlating the temperature dependence of the carrier density and mobility with the magnetoresistance characteristics, we demonstrate that both the quasilinear positive and the negative magnetoresistance are caused by conductivity fluctuations. Chiral anomaly is not needed to explain the observed features.

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supporting

confidence: 85%

Negative magnetoresistance due to conductivity fluctuations in films of the topological semimetal Cd3As2

Schumann¹,

Goyal²,

Kealhofer³

et al. 2017

Phys. Rev. B

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“…2(a). These dips in MR are similar to those observed in thin film of magnetically doped Bi 2 Se 3 topological insulators [34][35][36], graphene [37,38] and 3D Dirac semimetal Cd 3 As 2 [39], which is a characteristic feature of weak antilocalization (WAL) effect [38].…”

supporting

confidence: 76%

Pressure-induced topological phase transitions and strongly anisotropic magnetoresistance in bulk black phosphorus

Long

Zhao

et al. 2017

Phys. Rev. B

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We report the anisotropic magneto-transport measurement on a non-compound band semiconductor black phosphorus (BP) with magnetic field B up to 16 Tesla applied in both perpendicular and parallel to electric current I under hydrostatic pressures. The BP undergoes a topological Lifshitz transition from band semiconductor to a zero-gap Dirac semimetal state, characterized by a weak localization-weak antilocaliation transition at low magnetic fields and the emergence of a nontrivial Berry Phase of π detected by SdH magneto-oscillations in magnetoresistance curves. In the transition region, we observe a pressure-dependent negative MR only in the B I configuration. This negative longitudinal MR is attributed to the Adler-Bell-Jackiw anomaly (topological E · B term) in the presence of weak antilocalization corrections.PACS numbers: 74.20. Rp, 74.25.Ha, 74.70.Dd More recently a new kind of topological materials termed Dirac or Weyl semimetal, three-dimensional (3D) analogs of two-dimensional graphene, has been intensively investigated both theoretically and experimentally in that Dirac or Weyl semimetal is a phase of matter that provides a solid state realization of chiral Weyl fermions [1][2][3][4][5][6][7][8]. Most of its unique physics is a consequence of chiral anomaly, namely non-conservation of the number of quasiparticles of a given chirality. This extraordinary property is notably characterised by a large and strongly anisotropic negative magneto-resistance (MR) which exists in the case when the electric and magnetic fields are collinearly aligned. Indeed, following the theoretical prediction, the chiral anomaly-induced negative MR has been notably realized in Dirac semimetal Cd 3 As 2 [9,10] Recently the narrow band-gap semiconductor, black phosphorus (BP), has been revived owing to the realization of mono-layered crystalline structure (phosphorene) and the exhibition of promising carrier mobilities, possible a new candidate for next-generation electronic and spintronic devices [20][21][22][23][24]. Fundamentally, BP has a relatively low band gap which can be further reduced by increasing the interlayer coupling. As its counterparts, slight change in the crystal structure thus strongly modifies the band gap of BP [25,26]. In particular, first-principle calculation predicts that BP posses a unique band structure, whose dispersion is nearly linear along the armchair direction [27,28]. Recent photoemission and magneto-transport measurements appear to support the theoretical prediction that bulk BP host 3D Dirac semimetal phase [29,30]. Therefore, in such Dirac semimetal of BP, there is strong interest in whether the chiral anomaly can be detected as a negative contribution to the longitudinal MR. In this paper we apply a moderate hydrostatic pressure to drive bulk BP into a semimetallic state. By anisotropic magnetoresistance measurements we observe a large negative MR only in the presence of electric and magnetic fields aligned collinearly. This negative longitudinal MR is attributed to the Adler-Bell-Jackiw ...

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“…2, along with their sheet carrier densities. All films show n-type conductivity, with room temperature carrier mobilities increasing with substrate temperature from ∼550 cm 2 /V s to 19 300 cm 2 /V s. The latter are comparable to room temperature single crystal values 26 and higher than those for thin films reported in the literature, which were in the range of 2000 cm 2 /V s-11 000 cm 2 /V s. 13,17,18,27 The GaSb films exhibited sheet resistances that were at least three orders of magnitude higher than those of the Cd 3 As 2 films, APL Mater. ensuring that the measurements were dominated by the properties of the Cd 3 As 2 films.…”

supporting

confidence: 69%

Molecular beam epitaxy of Cd3As2 on a III-V substrate

et al. 2016

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Epitaxial, strain-engineered Dirac semimetal heterostructures promise tuning of the unique properties of these materials. In this study, we investigate the growth of thin films of the recently discovered Dirac semimetal Cd3As2 by molecular beam epitaxy. We show that epitaxial Cd3As2 layers can be grown at low temperatures (110 °C–220 °C), in situ, on (111) GaSb buffer layers deposited on (111) GaAs substrates. The orientation relationship is described by (112)Cd3As2 || (111) GaSb and [11¯0]Cd3As2 || [1¯01]GaSb. The films are shown to grow in the low-temperature, vacancy ordered, tetragonal Dirac semimetal phase. They exhibit high room temperature mobilities of up to 19300 cm2/Vs, despite a three-dimensional surface morphology indicative of island growth and the presence of twin variants. The results indicate that epitaxial growth on more closely lattice matched buffer layers, such as InGaSb or InAlSb, which allow for imposing different degrees of epitaxial coherency strains, should be possible.

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Weak antilocalization in Cd3As2 thin films

Cited by 81 publications

References 48 publications

Negative magnetoresistance due to conductivity fluctuations in films of the topological semimetal Cd3As2

Negative magnetoresistance due to conductivity fluctuations in films of the topological semimetal Cd3As2

Pressure-induced topological phase transitions and strongly anisotropic magnetoresistance in bulk black phosphorus

Molecular beam epitaxy of Cd3As2 on a III-V substrate

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