Weak Epitaxy Growth Affording High‐Mobility Thin Films of Disk‐Like Organic Semiconductors

Wang, Haibo; Zhu, Feng; Yang, Junliang; Geng, Yanhou; Yan, Donghang

doi:10.1002/adma.200602566

Cited by 194 publications

(219 citation statements)

References 31 publications

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“…According to the reference literatures and the process for preparing semiconductor thin lms by vapor deposition, the XRD pattern indicates that the ZnPcF 16 molecules are approximately standing-up on the p-6p layer. [12][13][14][15] …”

Section: Thermal Propertiesmentioning

confidence: 99%

Synthesis, Spectral Properties of Zinc Hexadecafluorophthalocyanine (ZnPcF<sub>16</sub>) and Its Application in Organic Thin Film Transistors

Sun

Wang

et al. 2017

Mater. Trans.

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A stable n-type semiconductor material, ZnPcF 16 , was synthesized and characterized by infrared (IR), UV-vis and uorescence spectra. ZnPcF 16 showed a monomer characteristic in 1, 2-dichlorobenzene (DCB) while exhibited an aggregation property in tetrahydrofuran (THF) and dimethylformamide (DMF). The ZnPcF 16 /p-6p (ZnPcF 16 on p-6p) organic thin lm transistors (OTFTs) using ZnPcF 16 as an active layer and p-6p as an inducing layer was fabricated by the physical vapor deposition technique. The ZnPcF 16 semiconductor lm was characterized by XRD and SEM. And the results showed that ZnPcF 16 molecules can be oriented after the employment of the p-6p inducing layer. Charge carrier eld-effect mobility (µ) and threshold voltage (V T ) of the ZnPcF 16 /p-6p OTFTs were 1.3 × 10 −2 cm 2 /V s and 22 V, respectively.

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Section: Thermal Propertiesmentioning

confidence: 99%

Synthesis, Spectral Properties of Zinc Hexadecafluorophthalocyanine (ZnPcF<sub>16</sub>) and Its Application in Organic Thin Film Transistors

Sun

Wang

et al. 2017

Mater. Trans.

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“…2 10 5 CuPc [50] 1.00 10 4 P5-Precursor [27] 0.068 10 5 ZnPc [52] 0.32 -Rubrene (PMMA) [29] 1.5～2.0 1.2～20 PtOET [54] 10 -6 ～10 -4 10 2 ～10…”

Section: Figure 2 Schematic Of P-and N-channel Thin-film Transistors unclassified

“…他们以 p-6P 作为诱导层, 经弱外延生长技术制备出了高度有序的半导体薄膜, 其晶体管器件的性能达到了单晶器件的水平, 其制备出的基于 ZnPc 的 OTFTs 的迁移率达到 0.32 cm [52] . 郭雪峰等 [53] 过程中引入 LB 成膜技术, 构建了酞菁铜 LB 单分子膜的 (1)苯酐尿素法 [61～63] : 即以尿素作为氨合剂, 在少量钼酸铵催化下, 加入适量的盐如无水硫酸钠作助熔剂, 使邻苯二甲酸酐或邻苯二甲酰胺在高温下与金属卤化物或氧化物进行反应合成金属酞菁配合物.…”

Section: 噻吩环类unclassified

Recent Progress of Semiconductors in Organic Thin-Film Transistors

Ma¹,

Wang²,

Guo³

et al. 2012

Chin. J. Org. Chem.

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“…Inserting an inducing layer has been widely applied in top contact transistors and received considerable attentions. [38][39][40] Herein, the organic layer which forms lamellar grains from the edge of the photolithographypatterned electrodes was deposited prior to depositing the active layer. The following organic semiconductor layer grown on the inducing layer formed lamellar films on the inducing layer, enabling a good contact between the electrodes and the organic semiconductor thin films.…”

Section: High-performance Bottom-contact Organic Thin-film Transistormentioning

confidence: 99%

“…[6,11] Figure 1a shows the device fabrication process and configuration. The para-sexiphenyl (p-6P), which is widely used to induce the epitaxy growth of organic semiconductor, [38,39] was selected here as the inducing layer. Pentacene and F 16 CuPc are the two representative organic semiconductor (OSC) materials (Figure 1b).…”

Section: Introductionmentioning

confidence: 99%

High‐Performance Bottom‐Contact Organic Thin‐Film Transistors by Improving the Lateral Contact

Zhang

Wang

Zhou

et al. 2017

Adv Elect Materials

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prepatterned electrodes on the substrates generate artificial steps that significantly affect the morphological uniformity and continuity of the organic active layer at the electrode/organic interfaces, causing large contact resistance. The most common solution is to modify the electrodes, e.g., chemical bonding of thiols on gold, inserting buffer layer on the electrodes, or applying conductive materials such as graphene, polypyrrole as electrodes. [2,10, These approaches could either realize a good energy level alignment or improve the interface morphology to decrease the contact resistance. Nevertheless, the performances of the BC transistors are still insufficient to match the application requirements.It is known that the resistance of the transistors consists of channel resistance and contact resistance. The latter is determined by the carrier injection from the interfaces of the organic/electrode: the top injection and the side injection. [22] With regard to the side injection, a major issue is the morphology discontinuity near the edge of the electrodes. Previously, Kudo and co-workers proposed a method that embedding electrodes into the dielectric layer to achieve a planar interface and obtained a mobility ≈0.48 cm 2 V −1 s −1 (in saturate regime) for pentacene, but this will induce relatively complicate patterning process. [33][34][35] Li et al. treated the electrodes with fluorine substituted benzene thiol and effectively improved the texture from the contacts extending to thwe channel, as well as the performance of corresponding solution casted BC transistors. [30,36,37] Here, we report a simple method to improve the continuity of organic films at the lateral interfaces of electrode/organic through incorporating an organic inducing layer. Inserting an inducing layer has been widely applied in top contact transistors and received considerable attentions. [38][39][40] Herein, the organic layer which forms lamellar grains from the edge of the photolithographypatterned electrodes was deposited prior to depositing the active layer. The following organic semiconductor layer grown on the inducing layer formed lamellar films on the inducing layer, enabling a good contact between the electrodes and the organic semiconductor thin films. As a result, a remarkable decrement of the contact resistance is achieved. Together with the improved film ordering by weak epitaxy on the inducing layer in the channel area, we achieved high performance bottom contact thin film transistors with the maximum mobility exceeding 1 cm 2 V −1 s −1 for pentacene in ambient condition, which is comparable to the top contact ones.One of the main challenges to achieve high-performance bottom-contact transistors involves the organic/electrodes contacts. This study provides a simple approach to address the contact issue by incorporating an inducing layer prior to the organic semiconductor deposition. The molecules of the inducing layer nucleate into lamellar grains from the edge to the channel, resulting in a good morphological contact to th...

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Weak Epitaxy Growth Affording High‐Mobility Thin Films of Disk‐Like Organic Semiconductors

Abstract: Thin films of phthalocyanine compounds show weak epitaxial growth on a monodomain film of a rod‐like molecule (see figure). The resulting organic electronic devices exhibit high charge carrier mobilities close to those of the single‐crystal devices.

Cited by 194 publications

References 31 publications

Synthesis, Spectral Properties of Zinc Hexadecafluorophthalocyanine (ZnPcF<sub>16</sub>) and Its Application in Organic Thin Film Transistors

Synthesis, Spectral Properties of Zinc Hexadecafluorophthalocyanine (ZnPcF<sub>16</sub>) and Its Application in Organic Thin Film Transistors

Recent Progress of Semiconductors in Organic Thin-Film Transistors

High‐Performance Bottom‐Contact Organic Thin‐Film Transistors by Improving the Lateral Contact

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