Weak Localization and Correlation Effects of Two Dimensional Electrons in Indium-Tin-Oxide Films

Ohyama, T.; Okamoto, Masahiro; Otsuka, Eizo

doi:10.1143/jpsj.52.3571

Cited by 31 publications

(17 citation statements)

References 16 publications

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“…The presence of minima in the resistivity-temperature (q-T) curves has also been observed in other semiconductor oxides, such as undoped In 2 O 3 with a transition temperature (T m ) at $120 K, 21 undoped ZnO with T m at $170 K, 19 indium tin oxide (ITO) with T m at > 100 K, 22 indium zinc oxide (IZO) with T m at $100 K, 23 Al doped ZnO with T m at > 125 K, 24 etc. They are all disorder related no matter if they are intentionally undoped or doped, amorphous or crystalline.…”

Section: Resultsmentioning

confidence: 70%

Improved mobility and conductivity of an Al2O3 incorporated indium zinc oxide system

Sun

Huang

Gong

2011

Journal of Applied Physics

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The investigation of Al2O3 doped indium zinc oxide (83 cation % In-17 cation % Zn), denoted Al2O3-IZO, shows that the conductivity of certain amorphous Al2O3-IZO samples can be 752 S cm−1 with a mobility of 26.5 cm2V−1s−1, 4 times higher than that of IZO (190 Scm−1) with an industrial standard indium and zinc atomic ratio of 83/17. Furthermore, by increasing Al2O3 content, strangely, Al2O3 doped IZO samples exhibit an unexpected high mobility trend for some of the Al2O3-IZO samples and a transport property change from semiconductor to metallic mechanism. The presence of minimum resistivity in the resistivity-temperature curve, denoted metal-semiconductor transition, is observed and interpreted through the quantum corrections to conductivity.

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Section: Resultsmentioning

confidence: 70%

Improved mobility and conductivity of an Al2O3 incorporated indium zinc oxide system

Sun

Huang

Gong

2011

Journal of Applied Physics

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“…including ITO [67,129,[136][137][138][139][140], and ZnO based materials [141][142][143]. In this subsection, we address the experimental 3D, 2D, and 1D WL effects in ITO thick films, thin films, and nanowires, respectively.…”

Section: Weak-localization Effect and Electron Dephasing Timementioning

confidence: 99%

Electronic conduction properties of indium tin oxide: single-particle and many-body transport

Lin

2014

J. Phys.: Condens. Matter

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Abstract.Indium tin oxide (Sn-doped In 2 O 3−δ or ITO) is an interesting and technologically important transparent conducting oxide. This class of material has been extensively investigated for decades, with research efforts focusing on the application aspects. The fundamental issues of the electronic conduction properties of ITO from 300 K down to low temperatures have rarely been addressed. Studies of the electricaltransport properties over a wide range of temperature are essential to unraveling the underlying electronic dynamics and microscopic electronic parameters. In this Topical Review, we show that one can learn rich physics in ITO material, including the semiclassical Boltzmann transport, the quantum-interference electron transport, and the electron-electron interaction effects in the presence of disorder and granularity. To reveal the avenues and opportunities that the ITO material provides for fundamental research, we demonstrate a variety of charge transport properties in different forms of ITO structures, including homogeneous polycrystalline films, homogeneous singlecrystalline nanowires, and inhomogeneous ultrathin films. We not only address new physics phenomena that arise in ITO but also illustrate the versatility of the stable ITO material forms for potential applications. We emphasize that, microscopically, the rich electronic conduction properties of ITO originate from the inherited freeelectron-like energy bandstructure and low-carrier concentration (as compared with that in typical metals) characteristics of this class of material. Furthermore, a low carrier concentration leads to slow electron-phonon relaxation, which causes (i) a small residual resistance ratio, (ii) a linear electron diffusion thermoelectric power in a wide temperature range 1-300 K, and (iii) a weak electron dephasing rate. We focus our discussion on the metallic-like ITO material.

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“…7) Up to now, not only ITO films 8) and inversion layers with low carrier densities but also many metallic thin films 9) have been investigated in detail, to confirm the theoretical prediction of WL. The magnetoconductance Á has been analyzed with the WL theory 10) to derive the inelastic scattering time in .…”

Section: Introductionmentioning

confidence: 73%

Weak Localization and Electron–Electron Interaction Effects in Indium Zinc Oxide Films

et al. 2007

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Electron weak localization (WL), electron-electron (el-el) interaction and electron-phonon (el-ph) scattering effects on the transport properties have been investigated for two to three-dimensional indium zinc oxide films. The temperature T dependence of the electron inelastic scattering rate 1= in of twodimensional films has been deduced from magnetoconductance data. The rate 1= in well fits the sum of el-el and el-ph inelastic scattering rates, 1= in ¼ 1= in,el{el þ 1= in,el{ph . Using the free electron model to determine the diffusion constant, we have obtained the effective electron mass m Ã % 0:55m 0 by fitting the theory for 1= in,el{el to data at sufficiently low temperatures. Under a high magnetic field applied to suppress WL, the Hall coefficient varies, independently of the dimensionality, with temperature by about a two times larger rate than that of resistance. This result agrees well with the theory of Al'tshuler, Aronov, and Lee. At temperatures above % 10 K, the T dependence of the inverse of mobility 1= is well described by the Grüneisen-Bloch formula with the use of the Debye temperature Â D % 750 { 760 K. The el-ph coupling constant el{ph % 1:1{1:3 has been obtained from the combination of data on in ðTÞ, 1=ðTÞ, m Ã , and Â D .

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Weak Localization and Correlation Effects of Two Dimensional Electrons in Indium-Tin-Oxide Films

Cited by 31 publications

References 16 publications

Improved mobility and conductivity of an Al2O3 incorporated indium zinc oxide system

Improved mobility and conductivity of an Al2O3 incorporated indium zinc oxide system

Electronic conduction properties of indium tin oxide: single-particle and many-body transport

Weak Localization and Electron–Electron Interaction Effects in Indium Zinc Oxide Films

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