Weak-Localization Correction to the Anomalous Hall Effect in Polycrystalline Fe Films

Mitra, Partha; Misra, R.; Hebard, A. F.; Muttalib, K. A.; Wölfle, P.

doi:10.1103/physrevlett.99.046804

Cited by 53 publications

(74 citation statements)

References 19 publications

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“…The nonzero prefactors A xy suggesting that the weak electron localization correction to G AH is present. The smaller coefficients A R and A AH at t=2 nm can be attributed to its large R xx at 5 K [12,14]. In contrast, a universal scaling 2A R ≈A AH is observed at t=5 nm, indicating that the quantum correction to G AH is negligible.…”

Section: R T R Tmentioning

confidence: 82%

“…It should be noted that both calculation [18] and experimental [12] results have demonstrated that there was no interaction-induced lnT correction to G AH . The nonzero prefactors A xy suggesting that the weak electron localization correction to G AH is present.…”

Section: R T R Tmentioning

confidence: 99%

“…The Coulomb interaction correction to anomalous Hall conductance G AH has been found to vanish for both the skew-scattering and side-jump mechanisms [10,11] due to general symmetry reasons [18]. Whereas, the electron localization correction to G AH is nonzero for skew-scattering [12,20] and vanishes for side-jump mechanism [18,20]. The scaling exponent in the dirty regime has been found to become 2.0, rather than 1.6 that is predicted by the unified theory, when G AH receives quantum corrections from…”

Section: Introductionmentioning

confidence: 99%

“…At low temperatures, the physics of AHE is enriched by quantum effects of Coulomb interaction and electron localization [10][11][12][13][14][15][16][17][18][19][20]. The Coulomb interaction correction to anomalous Hall conductance G AH has been found to vanish for both the skew-scattering and side-jump mechanisms [10,11] due to general symmetry reasons [18].…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Scaling of anomalous Hall effect in amorphous CoFeB films with accompanying quantum correction

Zhang

Wang

et al. 2015

Solid State Communications

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This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting galley proof before it is published in its final citable form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain.

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Section: R T R Tmentioning

confidence: 82%

Section: R T R Tmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Scaling of anomalous Hall effect in amorphous CoFeB films with accompanying quantum correction

Zhang

Wang

et al. 2015

Solid State Communications

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“…effect is the anomalous Hall effect in ferromagnetic granular materials [11]. Now we briefly outline the model and method used to derive the announced results, details of our calculations will be presented elsewhere [12].…”

mentioning

confidence: 99%

Hall Resistivity of Granular Metals

Kharitonov

Efetov

2007

Phys. Rev. Lett.

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We calculate the Hall conductivity σxy and resistivity ρxy of a granular system at large tunneling conductance gT ≫ 1. We show that in the absence of Coulomb interaction the Hall resistivity depends neither on the tunneling conductance nor on the intragrain disorder and is given by the classical formula ρxy = H/(n * ec), where n * differs from the carrier density n inside the grains by a numerical coefficient determined by the shape of the grains. The Coulomb interaction gives rise to logarithmic in temperature T correction to ρxy in the range Γ T min(gT Ec, E Th ), where Γ is the tunneling escape rate, Ec is the charging energy and E Th is the Thouless energy of the grain. does not depend on the mean free path and allows one to experimentally determine the carrier concentration n. Recently, much attention from both experimental and theoretical sides has been paid to granular systems (see a review [1] and references therein). Although various physical quantities have been calculated in different regimes, the Hall transport in the granular matter has not been addressed theoretically yet. In this work we calculate the Hall conductivity(HC) of a granular system and Coulomb interaction corrections to it in the metallic regime, when the intergrain tunneling conductance G T = (2e 2 / )g T is large, g T ≫ 1 (further we set = 1).Technically, calculating HC σ xy appears to be more complicated than calculating the longitudinal conductivity(LC) σ xx . The granularity of the system is ensured by the condition that the conductance G 0 = 2e 2 g 0 of the grain is much larger than the tunneling conductance G T , g 0 /g T ≫ 1. In this limit the main contribution to σ xx comes from the tunnel barriers between the grains rather than from scattering on impurities inside the grains. In the absence of Coulomb interaction LC equalswhere a is the size of the grains and d is the dimensionality of the system. Therefore when studying longitudinal transport one can neglect electron dynamics inside the grains, which simplifies calculations significantly. On the contrary, for Hall transport one is forced to take the intragrain electron dynamics into account, since the Hall current originates from the transversal drift in crossed magnetic and electric fields inside the grains. As we find in this work the intragrain electron dynamics can be included within the diagrammatic approach by considering higher diffusion modes inside the grain. This procedures accounts for the finiteness of the ratio g T /g 0 , and allows one, in principle, to study both LC and HC of the granular system for arbitrary ratio g T /g 0 . The obtained results reproduce the solution of the classical electrodynamics problem for a granular medium (e.g. the formulacan be obtained as a series in g T /g 0 ). Quantum effects (e.g. Coulomb interaction and weak localization) may be incorporated into this scheme afterwards.We perform calculations for magnetic fields H such that ω H τ ≪ 1, where ω H = eH/mc is the Larmor frequency and τ is the electron scattering time inside the grai...

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Underlying Mechanisms and Tunability of the Anomalous Hall Effect in NiCo₂O₄ Films with Robust Perpendicular Magnetic Anisotropy

Lv,

Huang,

Zhang

et al. 2023

Advanced Science

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Their high tunability of electronic and magnetic properties makes transition‐metal oxides (TMOs) highly intriguing for fundamental studies and promising for a wide range of applications. TMOs with strong ferrimagnetism provide new platforms for tailoring the anomalous Hall effect (AHE) beyond conventional concepts based on ferromagnets, and particularly TMOs with perpendicular magnetic anisotropy (PMA) are of prime importance for today's spintronics. This study reports on transport phenomena and magnetic characteristics of the ferrimagnetic TMO NiCo2O4 (NCO) exhibiting PMA. The entire electrical and magnetic properties of NCO films are strongly correlated with their conductivities governed by the cation valence states. The AHE exhibits an unusual sign reversal resulting from a competition between intrinsic and extrinsic mechanisms depending on the conductivity, which can be tuned by the synthesis conditions independent of the film thickness. Importantly, skew‐scattering is identified as an AHE contribution for the first time in the low‐conductivity regime. Application wise, the robust PMA without thickness limitation constitutes a major advantage compared to conventional PMA materials utilized in today's spintronics. The great potential for applications is exemplified by two proposed novel device designs consisting only of NCO films that open a new route for future spintronics, such as ferrimagnetic high‐density memories.

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Weak-Localization Correction to the Anomalous Hall Effect in Polycrystalline Fe Films

Cited by 53 publications

References 19 publications

Scaling of anomalous Hall effect in amorphous CoFeB films with accompanying quantum correction

Scaling of anomalous Hall effect in amorphous CoFeB films with accompanying quantum correction

Hall Resistivity of Granular Metals

Underlying Mechanisms and Tunability of the Anomalous Hall Effect in NiCo₂O₄ Films with Robust Perpendicular Magnetic Anisotropy

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Weak-Localization Correction to the Anomalous Hall Effect in Polycrystalline Fe Films

Cited by 53 publications

References 19 publications

Scaling of anomalous Hall effect in amorphous CoFeB films with accompanying quantum correction

Scaling of anomalous Hall effect in amorphous CoFeB films with accompanying quantum correction

Hall Resistivity of Granular Metals

Underlying Mechanisms and Tunability of the Anomalous Hall Effect in NiCo2O4 Films with Robust Perpendicular Magnetic Anisotropy

Contact Info

Product

Resources

About

Underlying Mechanisms and Tunability of the Anomalous Hall Effect in NiCo₂O₄ Films with Robust Perpendicular Magnetic Anisotropy