“…In actual manufacturing, the front p-type ohmic contact electrode of the SiC diode was usually made of Ti with a thickness of 30 nm and Al with a thickness of 100 nm, and the backside n-type ohmic contact electrode was usually made of Ni with a thickness of 150 nm [41], [42], [43], [44], [45]. Also, the surface area of the SiC neutron detector was 1 × 1 cm 2 [9], [10], [15]. As 3 H particles with an energy of 2.73 MeV have the longest range of about 29 µm in SiC materials [3], [30], [34], [37], the thickness of SiC solid must be thick enough to ensure that charged particles can sufficiently decelerate and transfer all energy to the SiC region [9], [38], [46].…”