Numerous defects are present on the
surface and at the grain boundaries
of halide perovskite, which induce charge recombination and then impede
the further enhancement of power conversion efficiency (PCE) and long-term
stability of halide perovskite solar cells (PSCs). Consequently, it
is highly desirable to decrease the defect density in order to improve
the performance of PSCs. Here, we employ metal cations to passivate
these defects by incorporating Cd2+ into the perovskite
active layer. It is revealed that Cd2+ can not only adjust
crystal growth but also reduce the defect density and restrain the
charge recombination, which makes charge transfer more effective from
perovskite layers to charge transport layers. Meanwhile, we mainly
discuss the impact of the incorporated Cd2+ amount on the
performance of CsFAMA perovskite films and devices. By controlling
Cd2+ amount, a series of PSCs with good performance are
obtained. A champion device is obtained at 0.5% Cd2+-incorporated
amount with a high PCE of 21.95%. This device exhibits a good long-term
stability with about 12% PCE loss after 42 days in an ambient environment
with about 50% relative humidity at room temperature, while the control
one loses about 17% of its initial efficiency under the same conditions.
Furthermore, we improve the properties of the Cd2+-incorporated
CsFAMA PSCs by using KCl to passivate the CSCO/perovskite interface,
in which an optimized PCE is up to 22.75%.