Wet - Chemically Etched Silicon Nanowire Architectures: Formation and Properties

Sivakov, V.; Voigt, Felix; Hoffmann, B.; Gerliz, V.; Christiansen, Silke

doi:10.5772/16736

Cited by 10 publications

(9 citation statements)

References 93 publications

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“…The nanowires act as light trapping specimens due to its strong scattering capacities [10] and for the same reason as antireflective coatings [11][12][13]. A lot of different methods exist that produce such highly absorbing nanostructures which are divided into bottom-up growth mechanisms [14][15][16] and top-down etching processes [17][18][19][20]. This work will concentrate on a metal assisted wet-chemical etching (MA-WCE) process that does not need any vacuum equipment and can be performed even on large surfaces in a few minutes.…”

Section: Reasons For Nanowires In Pv Conceptsmentioning

confidence: 99%

“…Since details of WC etching processes were already discussed in a previous Intech book chapter [20], this work will only give a short summary and point out the latest optimization processes. The SiNW substrates that constitute the SC absorber are fabricated in a two-step MA-WCE procedure.…”

Section: Experimental Part 21 Top-down Fabrication Of Siliconmentioning

confidence: 99%

“…Thus, the Si is removed below the Ag particles which dig into the Si wafer and thus move away from the wafer surface inducing the SiNW formation. The direction of this Ag nanoparticle movement is anisotropic following certain crystal orientations and depends on the temperature as well [20]. Under controlled conditions, the SiNWs form perpendicularly to the surface of a Si(100) wafer and are oblique to the surface of a Si(111) wafer following <100>-directions [18].…”

Section: Experimental Part 21 Top-down Fabrication Of Siliconmentioning

confidence: 99%

See 2 more Smart Citations

Wet – Chemically Etched Silicon Nanowire Solar Cells: Fabrication and Advanced Characterization

Hoffmann¹,

Sivakov²,

Schmitt³

et al. 2012

Nanowires - Recent Advances

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Section: Reasons For Nanowires In Pv Conceptsmentioning

confidence: 99%

Section: Experimental Part 21 Top-down Fabrication Of Siliconmentioning

confidence: 99%

Section: Experimental Part 21 Top-down Fabrication Of Siliconmentioning

confidence: 99%

See 1 more Smart Citation

Wet – Chemically Etched Silicon Nanowire Solar Cells: Fabrication and Advanced Characterization

Hoffmann¹,

Sivakov²,

Schmitt³

et al. 2012

Nanowires - Recent Advances

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“…A vertical alignment contributes to the longitudinal falling down of the Ag nanoparticles from the surface to the bulk of the Si substrates, along with continuous dissolution of Si in the vicinity of Ag particles. 19,20 …”

Section: Mechanism Of the Formation Of Sinws Arraymentioning

confidence: 99%

Heterojunction of poly (o-toluidine) and silicon nanowires

et al. 2015

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Abstract. A nanostructured poly (o-toluidine)/silicon nanowires (NPOT/SiNWs) heterojunction has been fabricated with a low cost and simple techniques, where NPOT has been in situ polymerized upon SiNWs synthesized by chemical etching of a silicon wafer. The morphology of SiNWs before and after deposition of NPOT has been examined by scanning electron microscope (SEM). The chemical composition of NPOT has been investigated by Fourier transform infrared (FTIR), ultraviolet-visible (UV-visible) spectroscopy, and X-ray diffraction (XRD) techniques. NPOT morphology has also been examined by SEM before being deposited on the SiNWs. I-V measurements of the device have been made at room temperature under dark conditions. The heterojunction diode parameters such as turn-on voltage, reverse saturation current (I 0 ), ideality factor (η), barrier height (Φ B ) and series resistance (R s ) have been determined from the I − V curves using Schottky equations. The device shows promising characteristics as a candidate for producing heterojunction diodes. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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“…During the last decade, silicon nanorods (SiNRs) gained a great interest in several applications, for example, sensors [1,2], and also as solar cell materials [3][4][5][6][7]. Such good quality, mostly single-crystalline and defect-free semiconductor nanostructures can be used as building blocks of novel semiconductor devices.…”

Section: Introductionmentioning

confidence: 99%

Microstructure of silicon nanorods for novel solar cells

Radnóczi¹,

Stelzner²,

Sivakov³

et al. 2016

Resolution and Discovery

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Silicon nanorods were produced by the vapor-liquid-solid process and by wet chemical etching as possible candidates for solar cells. The nanostructures of Si nanorods formed by the two different processes are investigated and compared by transmission electron microscopy. The first type of nanorods was formed from bulk Si by wet-chemical top-down etching using Ag particles as catalyst. They exhibit a perfect crystalline structure but a wide distribution of diameter. The cross section of these rods is irregular, no faceting is observed, and the shape of the cross section depends on the random arrangement of the Ag particles. The etched rods are mostly parallel to the substrate normal as it is expected. The second type of nanorods was grown on Si substrate by the bottom-up vaporliquid-solid method using gold as a catalyst and silane as silicon source. These nanorods exhibit a single crystalline structure with twin boundaries and some kinks. The cross section of these rods is almost circular, but faceting is often observed.

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Wet - Chemically Etched Silicon Nanowire Architectures: Formation and Properties

Cited by 10 publications

References 93 publications

Wet – Chemically Etched Silicon Nanowire Solar Cells: Fabrication and Advanced Characterization

Wet – Chemically Etched Silicon Nanowire Solar Cells: Fabrication and Advanced Characterization

Heterojunction of poly (o-toluidine) and silicon nanowires

Microstructure of silicon nanorods for novel solar cells

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