Wet – Chemically Etched Silicon Nanowire Solar Cells: Fabrication and Advanced Characterization

Hoffmann, B.; Sivakov, V.; Schmitt, Sebastian W.; Bashouti, Muhammad Y.; Latzel, Michael; Dluhoš, Jiří; Jiruše, Jaroslav; Christiansen, Silke

doi:10.5772/52585

Cited by 3 publications

(2 citation statements)

References 48 publications

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“…As ITO layer can function as a conductive top electrode, emitter, or antireflection layer depending on the structure of solar cells [32,33], it can be a thin film, nanostructured layer, or a nanostructured layer on top of a thin film layer, which is similar to a report that a ZnO nanostructured layer on top of a thin film layer can enhance the efficiency of GaAs-based solar cell [13]. If ITO layer can be modified to control absorption or reflection of light as reported for Si and ZnO nanostructures by dry etching process [6,11], this may then be employed to design solar cells with novel structures or improve the efficiency of solar cells. 4 Conclusions Au nanoparticles and polystyrene nanospheres were used as mask for plasma drying etching of ITO layer through RIE and ICP processes.…”

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confidence: 59%

Nanoparticle and nanosphere mask for etching of ITO nanostructures and their reflection properties

Deng

Holder

et al. 2014

Phys. Status Solidi A

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Au nanoparticles and polystyrene nanospheres were used as mask for plasma etching of indium tin oxide (ITO) layer. By reactive ion etching (RIE) processes, the morphology of polystyrene nanospheres can be tuned through chemical or physical etching, and Au nanoparticle mask can result in ITO nanostructures with larger aspect ratio than nanosphere mask. During inductively coupled plasma (ICP) processes, Au nanoparticle mask was not affected by the thermal effect of plasma, whereas temperature of the substrate was essential to protect nanospheres from the damaging effect of plasma. Physical bombardment in the plasma can also modify the nanospheres. It was observed that under the same process conditions, the ratio of CH4 and H2 in the process gas can affect the etching rate of ITO without completely etching the nanospheres. The morphology of ITO nanostructures also depends on process conditions. The resulting ITO nanostructures show lower reflection in a spectral range of 400–1000 nm than c‐Si and conventional antireflection layer of SiNx film. ITO nanostructures obtained after etching (scale bar = 200 nm).

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confidence: 59%

Nanoparticle and nanosphere mask for etching of ITO nanostructures and their reflection properties

Deng

Holder

et al. 2014

Phys. Status Solidi A

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“…Нанопроволоки на основе кремния нашли свое при-менение в различных приборах наноэлектроники, опто-электроники, сенсорики и фотовольтаики [1][2][3][4][5][6][7]. Суще-ствует много методов создания кремниевых нанопро-волок: химическое осаждение из газовой фазы, реак-тивное ионное травление, химическое травление [8][9][10][11][12].…”

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Электрические свойства гетероструктур p-NiO/n-Si на основе наноструктурированного кремния

Parkhomenko¹,

Солован²,

Марьянчук³

2018

Физика И Техника Полупроводников

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Silicon nanowires are formed on n -Si substrates by chemical etching. p -NiO/ n -Si heterostructures are fabricated by reactive magnetron sputtering. The energy diagram of anisotype p -NiO/ n -Si heterostructures is constructed according to the Anderson model. The current–voltage and capacitance–voltage characteristics are measured and analyzed. The main current-transport mechanisms through the p -NiO/ n -Si heterojunction under forward and reverse biases are established.

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The effect of silicon surface treatment on the electrical properties of n-MoN/n-Si heterojunctions

Solovan¹,

Parkhomenko²,

Марьянчук³

2021

J. Phys. Stud.

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Wet – Chemically Etched Silicon Nanowire Solar Cells: Fabrication and Advanced Characterization

Cited by 3 publications

References 48 publications

Nanoparticle and nanosphere mask for etching of ITO nanostructures and their reflection properties

Nanoparticle and nanosphere mask for etching of ITO nanostructures and their reflection properties

Электрические свойства гетероструктур p-NiO/n-Si на основе наноструктурированного кремния

The effect of silicon surface treatment on the electrical properties of n-MoN/n-Si heterojunctions

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