Wet etching mechanism of Er2O3 grown on Si by molecular beam epitaxy

Grinys, Tomas; Drunga, Tomas; Dobrovolskas, D.; Dargis, Rytis; Clark, Andrew

doi:10.1016/j.apsusc.2019.144452

Cited by 4 publications

(2 citation statements)

References 23 publications

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“…167,168 Wet etching removes materials using a solution's chemical reaction, resulting in isotropic characteristics. 169 Dry etching involves using plasma to react with a surface and form volatile substances that can etch materials. This process can be classified into reactive ion etching, reactive gas etching, and laser processing.…”

Section: Construction Strategiesmentioning

confidence: 99%

Recent advances in the construction and application of stretchable PEDOT smart electronic membranes

Chen,

Ye,

Cang

et al. 2023

J. Mater. Chem. C

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Section: Construction Strategiesmentioning

confidence: 99%

Recent advances in the construction and application of stretchable PEDOT smart electronic membranes

Chen,

Ye,

Cang

et al. 2023

J. Mater. Chem. C

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“…Moreover, it isn't easy to implement assorted BBPDs within standard Si-based complementary metal-oxide-semiconductor (CMOS) facilities because it requires simultaneous photodetection and corresponding electronic processing [8,9,12]. Wide bandgap (>5 eV) semiconductor Er 2 O 3 , in this context, shows broadband absorption properties, is mostly chemically inert with Si, and heterostructures on Si essentially exhibit high conduction-band-offsets (CBOs) [13][14][15]. Thus, proper material and surface engineering of Er 2 O 3 can potentially tune the band alignment of heterostructures, leading to improved broad-spectrum response.…”

Section: Introductionmentioning

confidence: 99%

Staggered band alignment of n-Er₂O₃/p-Si heterostructure for the fabrication of a high-performance broadband photodetector

Ghosh,

Wadhwa,

Shivani

et al. 2024

Nano Ex.

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The low responsivity of conventional Silicon photodiodes in ultraviolet and near-infrared regimes restricts their utility as broadband photodetectors (BBPDs). Despite ongoing investigations into various p-n heterostructures for Silicon-based BBPDs, challenges such as high dark current (Idark), low collection efficiency, low detectivity, and compatibility issues with large-scale Silicon-based devices persist. In this context, we have fabricated relatively unexplored n-Er2O3/p-Si heterojunction-based BBPDs. Polycrystalline Er2O3 thin films (∼110 nm) were deposited on p-Si 〈100〉 substrates by radio frequency magnetron sputtering. Although this process induces a microstrain of approximately 0.022 and a dislocation density of about 0.00303/nm2, the presence of optically active defects is minimal, indicated by a low Urbach energy (∼0.35 eV). X-ray photoelectron spectroscopy (XPS) analysis confirms staggered band alignment at the heterointerface, facilitating efficient charge carrier separation and transport. Consequently, the In/p-Si/n-Er2O3/In device demonstrated significant BBPD properties– low Idark ∼0.15 μA (at +5 V), photo-to-dark current ratio (PDCR) ∼6.5 (at +5 V, 700 nm) with a maximum photoresponsivity ∼22.3 A W−1, and impressive detectivity (∼1013 Jones) even in UV-C region where traditional silicon-based photodetectors respond feebly. The device also demonstrates transient photo-response across an ultrawide spectrum (254 nm–1200 nm) with a fast rise time/fall time ∼79 ms/∼86 ms (at −5 V for 600 nm illumination). This work establishes a straightforward and reliable method for proper material engineering, surface texturing, staggered heterojunction formation, and high-performance BBPD fabrication with prominent broad-spectrum responsivity, sizeable detectivity, and fast response. The integration of these BBPDs with Silicon opens possibilities for their use in electronic devices containing optical switches for communications and broadband image sensors, enhancing their utility in various applications.

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Infiltration of Erbium ions (Er3+) in Porous Silicon Layer Synthesized by Electrochemical Method: Structural and Optical Properties Studies

Kehil,

Rahmouni,

Boukhenoufa

et al. 2024

Silicon

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Wet etching mechanism of Er2O3 grown on Si by molecular beam epitaxy

Cited by 4 publications

References 23 publications

Recent advances in the construction and application of stretchable PEDOT smart electronic membranes

Recent advances in the construction and application of stretchable PEDOT smart electronic membranes

Staggered band alignment of n-Er₂O₃/p-Si heterostructure for the fabrication of a high-performance broadband photodetector

Infiltration of Erbium ions (Er3+) in Porous Silicon Layer Synthesized by Electrochemical Method: Structural and Optical Properties Studies

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Wet etching mechanism of Er2O3 grown on Si by molecular beam epitaxy

Cited by 4 publications

References 23 publications

Recent advances in the construction and application of stretchable PEDOT smart electronic membranes

Recent advances in the construction and application of stretchable PEDOT smart electronic membranes

Staggered band alignment of n-Er2O3/p-Si heterostructure for the fabrication of a high-performance broadband photodetector

Infiltration of Erbium ions (Er3+) in Porous Silicon Layer Synthesized by Electrochemical Method: Structural and Optical Properties Studies

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Product

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Staggered band alignment of n-Er₂O₃/p-Si heterostructure for the fabrication of a high-performance broadband photodetector