Wet etching studies of silicon nitride thin films deposited by electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition

Sundaram, Kalpathy B.; Sah, R. E.; Baumann, H.; Balachandran, Kartik; Todi, Ravi M.

doi:10.1016/s0167-9317(03)00412-x

Cited by 36 publications

(25 citation statements)

References 18 publications

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“…But the etching rate of deposited SiN x -film without RF from an ICP-CVD is comparable with the etching rate from a PECVD with electron cyclotron resonance (ECR)-source that is also denoted with ECR-CVD (20nm/min in BHF 9:1 at a temperature of 25 • C). 21 It is also comparable with a deposited film from a plasma CVD deposited at temperature of 300 • C and working with precursor SiH 4 and NH 3 (130 − 134Å/min in BHF 7:1 at a temperature of 23 • C). 20 But the etching rate of a SiN x from ICP-CVD is definitely higher than the etching rate from Si 3 N 4 that is manufactured at 900 • C (8Å/min in BHF 7:1 at a temperature of 23 • C).…”

Section: Measurement Resultsmentioning

confidence: 56%

Bulk- micromachined dielectric tunable optical filter realized with inductively coupled plasma chemical vapour deposition

et al. 2008

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We present the characterization of silicon oxide (SiO x ) and silicon nitride (SiN x ) films deposited by inductively coupled plasma chemical vapour deposition (ICP-CVD) at low temperature (< 100 • C). A tunable optical FabryPérot (FP) -filter operating at a wavelength around 1.5µm is realized. It is hybridly assembled with two dielectric distributed Bragg reflectors (DBR). One of the DBR-mirrors is intentionally curved using the intrinsic stress inside the films. Our aim is the development of a tunable surface micromachined VCSEL with a curved dielectric mirror. Therefore ICP-CVD with a low deposition temperature is used for SiO x and SiN x films. As a first step the realization of a tunable bulk-mircomachined optical FP-filter is presented. The refractive index, deposition rate, stress and etching rate in buffered hydrofluoric acid (BHF) of thin dielectric films (<500 nm) in dependence on deposition temperature and on gas flow ratio are investigated. The knowledge of the deposition characteristics of the dielectric films is used to realize DBRs with a given curvature that are applied to electrothermally actuated, optical tunable FP-filters. The presented filter has a free spectral range of 29 nm, an insertion loss of 10 dB and a full width half maximum of 0.16 nm.

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Section: Measurement Resultsmentioning

confidence: 56%

Bulk- micromachined dielectric tunable optical filter realized with inductively coupled plasma chemical vapour deposition

et al. 2008

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“…The wet etching of silicon nitride in HF based media is governed by the following general reaction [15]:…”

Section: Etch Resistancementioning

confidence: 99%

“…Conventionally, a capacitively coupled radio-frequency discharge is ignited [10][11][12], with a variation of this approach: pulsed-PECVD, where the duty cycle gives an additional degree of freedom [13]. Other alternatives include high density plasmas (HDP-CVD) [ as the electron-cyclotron-resonance (ECR-CVD) [15] and inductively coupled plasma (ICP-CVD) techniques [4,16,17]. ICP-CVD as high-density remote plasma approach allows the use of nitrogen precursor instead of ammonium and yields a higher rate of dissociation while minimizing the interaction between the plasma sheath and the substrate surface compared to standard PECVD, but still maintaining a low thermal budget.…”

Section: Introductionmentioning

confidence: 99%

Impact of auxiliary capacitively coupled plasma on the properties of ICP-CVD deposited a-SiNx:H thin films

Dergez

Schalko

Löffler³

et al. 2015

Sensors and Actuators A: Physical

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“…This tendency of R.I. and R dep of SiN x from ICP-CVD is similar to the results that are obtained by a PECVD with electron cyclotron resonance (ECR)-source. [15,16,17] This PECVD with ECRsource is also denoted as ECR chemical vapour deposition (ECR-CVD). Except the coupling of RF-power to the plasma, both PECVD-technologies ICP-CVD and ECR-CVD use the S. Jatta, K. Haberle, A. Klein, R. Schafranek, B. Koegel, P. Meissner same precursors for SiN x (SiH 4 þ N 2 ) and deposit at low temperatures.…”

Section: Influence Of the Deposition Pressurementioning

confidence: 99%

Depositon of Dielectric Films with Inductively Coupled Plasma‐CVD in Dependence on Pressure and Two RF‐Power‐Sources

Jatta

Haberle

Klein

et al. 2009

Plasma Processes & Polymers

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This paper presents the investigations of thin dielectric silicon oxide (SiOx) and silicon nitride (SiNx) films deposited below 100 °C by a plasma enhanced chemical vapour deposition (PECVD) using an inductively coupled plasma (ICP)‐source. The influence of the deposition pressure and the applied RF‐power to the plasma from the ICP‐source and a second RF‐power at substrate electrode on the characteristics of the deposited films are studied. The investigated characteristics are refractive index R.I. at 632 nm, deposition rate Rdep, stress σ and etching rate Retch in buffered hydrofluoric acid (BHF). Measurements from electron spectroscopy for chemical analysis (ESCA) support the investigations. The results are discussed and compared with other PECVD deposition methods. A significant influence of the RF‐generator connected to substrate electrode on etching rate and hence on film quality is identified for SiOx but the converse effect is identified for SiNx‐films.

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Wet etching studies of silicon nitride thin films deposited by electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition

Cited by 36 publications

References 18 publications

Bulk- micromachined dielectric tunable optical filter realized with inductively coupled plasma chemical vapour deposition

Bulk- micromachined dielectric tunable optical filter realized with inductively coupled plasma chemical vapour deposition

Impact of auxiliary capacitively coupled plasma on the properties of ICP-CVD deposited a-SiNx:H thin films

Depositon of Dielectric Films with Inductively Coupled Plasma‐CVD in Dependence on Pressure and Two RF‐Power‐Sources

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