Wet-recess gap-fill materials for an advanced dual damascene process

Shinjo, Tetsuya; Takei, Satoshi; Horiguchi, Yusuke; Nakajima, Yasuyuki

doi:10.1117/12.712461

Cited by 6 publications

(5 citation statements)

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“…A). 2 The cost of filling material becomes a great concern since thick film coating needs a large quantity of polymer materials in preparing formulations. The process not only wastes polymer materials but also limits the performance of the fill materials.…”

Section: Introductionmentioning

confidence: 99%

High-etch-rate low-bias bow outgassing BARC via-filling materials for 193-nm ArF lithographic process

Yao

Xiang

Yin

et al. 2008

Advances in Resist Materials and Processing Technology XXV

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As critical dimensions in integrated circuit (IC) device fabrication continue to shrink to less than 90 nm, designing multi-functional organic bottom anti-reflective coating (BARC) materials has become a challenge. In this paper, we report novel high performance BARC materials that are simultaneously capable of controlling reflectivity, planarizing on substrate surface, low bias filling without forming voids, low outgassing, high etch selectivity with resists and broad compatibility with resists. The new materials comprise of a chromophore that absorbs at 193 nm to give anti-reflective properties. By intriguing design of the crosslinking system to minimize the amount of low molecular weight additives and the by-product formation in the curing process, low-bias and low sublimation filling without formation of voids are achieved. The filling properties, etch selectivity, lithographic and outgassing data of the new BARC materials will be presented.The novel via-filling BARC materials may find applications in next generation via-first dual damascene (DD) process, which combines palanarizing surface topography and antireflectivity into one step process using single layer BARC material. In another application, the reported low k ultra high etch rate BARC materials have demonstrated good resist compatibility in ArF immersion lithographic process.

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Section: Introductionmentioning

confidence: 99%

High-etch-rate low-bias bow outgassing BARC via-filling materials for 193-nm ArF lithographic process

Yao

Xiang

Yin

et al. 2008

Advances in Resist Materials and Processing Technology XXV

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“…In order to promote the development of LSI having higher performance, planarization techniques become indispensable for wider depth-of focus margin in double patterning and Dual Damascene process as shown in Fig.1 [1][2][3][4][5][6][7][8] . Spin coat and etch back process using a conventional organic bottom anti-reflective coating (BARC) or thermal cross-link gap fill material, and then chemical mechanical polishing (CMP) technology as the most suitable processes were reported to decrease the thicknesses bias between the blanket areas and interconnect areas, and between the blanket areas and via arrays.…”

Section: Introductionmentioning

confidence: 99%

Advanced ultraviolet cross-link process and materials for global planarization

Takei

Horiguchi

Ohashi

et al. 2008

Advances in Resist Materials and Processing Technology XXV

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The use of a conventional thermal cross-link materials such as negative resists, anti-reflective coating (BARC), and planarizing layers does not lead to excellent planarization for multilevel interconnects, and specially via arrays prior to trench patterning for an advance lithography.The large thicknesses bias between the blanket areas and interconnect areas, and between the blanket areas and via arrays are usually observed. This large thickness bias creates problems during next lithography by narrowing the process latitude.Recently, chemical mechanical polishing (CMP) technology has been proposed to achieve global planarization. However, the CMP planarization technique is very sensitive to pattern density, and chemical etching reaction had high possibility to increase the dielectric constant.The current CMP technique still requires a new investment in the CMP equipment.In this paper, we reported another novel approach for global planarization using UV cross-link material (XUV TM ) and the dielectric ultra violet exposure unit in coater equipment (TOKYO ELECTRON LTD CLEAN TRACK TM ). This planar technique provides benefits for reducing the thickness bias observed in the 22-65 nm generation lithography and imprint processes. Using this technique, a remarkable reduction in via topography with 1.1 µm as a depth and 0.9-1.0 µm as a diameter has been achieved excellent thickness bias less than 20 nm.And, the planarization of the film obtained from the XUV TM was very high as compared with that of the film obtained from thermal cross-link gap fill material as the reference, particularly under severe coating conditions such as dense patterns.

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“…At the present stage of lithography, the output of an ArF excimer laser at 193 nm is used for the 45 -90 nm patterning and metal interconnects by the dual damascene (DD) process. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16] The DD process etches a dielectric layer to form a pattern of a metal conductor wire, and then fills the pattern with metal. The DD process can be classified into two principal types, namely, trench-first DD and via-first DD.…”

Section: Introductionmentioning

confidence: 99%

Resist Poisoning Studies of Gap Fill Materials for Patterning Metal Trenches in Via-First Dual Damascene Process

Takei

2008

jjap

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The via-first dual damascene process is the current manufacturing technology for copper/low-k interconnect fabrication. In the conventional via-first dual damascene process, metal trench patterning lithography is applied after filling the vias with sacrificial organic materials under the resist, such as gap fill materials and bottom antireflective coating. Resist poisoning has become a serious problem for the 65 nm technology node and beyond owing to the use of porous low-k dielectric materials. This study describes the newest method of evaluating resist poisoning. The dependence of film thickness on resist poisoning was observed, and the effects of the gap fill materials with different polymers were also clarified. One gap fill material was found to have an excellent resist poisoning blocking property as determined from the bias of trench patterning size between the center and edge areas. In addition, to evaluate the resist poisoning in lithography, a chemical approach using the developed gap fill materials can potentially allow the skipping of the additional thermal annealing process and achieve high throughput wafer processing by only coating the gap fill material on the substrates that generate resist poisoning. Continuing the via-first dual damascene process using porous low-k dielectric materials in an advanced lithography will be valuable in future studies based on this evaluation method, compared with the trench-first dual damascene process owing to the higher cost of the latter.

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Wet-recess gap-fill materials for an advanced dual damascene process

Cited by 6 publications

References 0 publications

High-etch-rate low-bias bow outgassing BARC via-filling materials for 193-nm ArF lithographic process

High-etch-rate low-bias bow outgassing BARC via-filling materials for 193-nm ArF lithographic process

Advanced ultraviolet cross-link process and materials for global planarization

Resist Poisoning Studies of Gap Fill Materials for Patterning Metal Trenches in Via-First Dual Damascene Process

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