Wet sulfur passivation of GaSb(100) surface for optoelectronic applications

Kunitsyna, E. V.; L’vova, T. V.; Дунаевский, М. С.; Terent'ev, Ya. V.; Семенов, А. Н.; Соловьев, В. А.; Meltser, B. Ya.; Иванов, С. В.; Yakovlev, Yu. P.

doi:10.1016/j.apsusc.2010.03.027

Cited by 21 publications

(9 citation statements)

References 13 publications

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“…For longer passivation times the etching of the surface create more surface states which are responsible for a decrease in the PL efficiency. The PL spectra show that for a 6-min passivation time we obtain an optimal surface, and that increasing Na 2 S treatment produces a non-monotonic etching-passivation process, as has been reported before [7].…”

Section: Resultssupporting

confidence: 76%

“…Wet passivation techniques offer the advantages of being a simple and economical method in which we can control the etching speed through the temperature and reactant density. Sulfur wet passivation on the GaSb surface opens new possibilities for the development of optoelectronic devices fabricated using liquid phase epitaxy and molecular beam epitaxy growth methods [4] [7].…”

Section: Introductionmentioning

confidence: 99%

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Aqueous Sulfur Passivation of N-Type GaSb Substrates Studied by Photoluminescence Spectroscopy

Hurtado-Castañeda¹,

Herrera-Pérez²,

Arias-Cerón³

et al. 2014

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In this work the influence of aqueous sulfur passivation on the surface of n-type (100) GaSb single crystals has been studied through low-temperature photoluminescence (PL) characterization. The samples were passivated at different times using aqueous solutions of sodium sulfide. PL spectroscopy was used to determinate the optimum time of sulfur passivation, through the measurement of the PL intensity for the different passivation times. For the samples measured, the PL spectra show the presence of two emission bands, whose intensity and energy position change for the different passivation times of the GaSb samples. According to the PL results, a passivation surface treatment of 6 min shows the highest PL intensity spectrum.

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Section: Resultssupporting

confidence: 76%

Section: Introductionmentioning

confidence: 99%

Aqueous Sulfur Passivation of N-Type GaSb Substrates Studied by Photoluminescence Spectroscopy

Hurtado-Castañeda¹,

Herrera-Pérez²,

Arias-Cerón³

et al. 2014

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“…Удаление слоя окисла в течение первых 2 мин выдержки в растворе не приводило ни к существенному изменению положения уровня Ферми [69], ни к возрастанию интенсивности ФЛ GaSb(100) [69,261], свидетельствуя о том, что ответственные за безызлучательную рекомбинацию ПС не изменялись на этой стадии. Интенсивность ФЛ GaSb(100) начинала возрастать [69,261] при протекании реакции (17), свидетельствуя о существенной модификации ПС, ответственных за безызлучательную рекомбинацию. Удаление электронов с ПС в раствор, сопровождающееся перестройкой химических связей на поверхности в процессе реакции (17), приводило к снижению плотности ПС и скорости поверхностной безызлучательной рекомбинации.…”

Section: роль окислительно-восстановительныхunclassified

“…С другой стороны, при еще более длительной выдержке GaSb(100) в растворе свойства полупроводника деградировали: наблюдалось ухудшение фотолюминесцентных характеристик [261] и восстановление приповерхностного изгиба зон [69]. Эти эффекты могут быть обусловлены, например, гидролизом сульфидного покрытия в щелочной среде раствора [69].…”

Section: роль окислительно-восстановительныхunclassified

Модификация Атомной И Электронной Структуры Поверхности Полупроводников А-=sup=-Iii-=/Sup=-В-=sup=-v-=/Sup=- На Границе С Растворами Электролитов О Б З Ор

Лебедев¹

2020

Физика И Техника Полупроводников

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Recent experimental and theoretical results on modification of the surface atomic and electronic structure of various III–V semiconductor with electrolyte solutions are reviewed. The relationship between the chemical and charge transfer processes that proceed at the semiconductor/electrolyte interfaces and accompanying modification of the semiconductor surface atomic and electronic structure is revealed. Advances in the application of electrolyte solutions for modification of the semiconductor nanostructures and device performance are discussed.

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“…To date, the highest performing TPV devices in this wavelength range have been achieved for devices based on GaInAsSb and AlGaAsSb alloys lattice matched to GaSb substrates [10].…”

Section: Introductionmentioning

confidence: 99%

Electrical Properties of GaInAsSb/GaSb/GaAlAsSb Double Heterostructure with Low Diameter

et al. 2014

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GaInAsSb/GaSb/GaAlAsSb double heterostructures are attractive for optoelectronic devices working in the 1.54.8 µm wavelength region. In this paper, the current mechanisms of liquid phase epitaxy grown GaInAsSb based double heterostructures with 100 µm diameter were investigated in the temperature range 77350 K. It was found that diusion current dominates at the high temperature (> 240 K) and small forward bias region, while generation-recombination current dominates at intermediate temperatures (242171 K). At low temperature region (< 171 K), the tunneling mechanism of the current ow dominates in both forward and reverse biases.

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Wet sulfur passivation of GaSb(100) surface for optoelectronic applications

Cited by 21 publications

References 13 publications

Aqueous Sulfur Passivation of N-Type GaSb Substrates Studied by Photoluminescence Spectroscopy

Aqueous Sulfur Passivation of N-Type GaSb Substrates Studied by Photoluminescence Spectroscopy

Модификация Атомной И Электронной Структуры Поверхности Полупроводников А-=sup=-Iii-=/Sup=-В-=sup=-v-=/Sup=- На Границе С Растворами Электролитов О Б З Ор

Electrical Properties of GaInAsSb/GaSb/GaAlAsSb Double Heterostructure with Low Diameter

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