Wet thermal oxidation of GaN

AlxGa1–xN—A New Material System for Biosensors

“…In addition, we found that wet oxidation for 2 h resulted in more hydrophilic surfaces than dry oxidation, which can be attributed to the lower oxidation rates in the latter case. [33] Dry oxidation for 6 h results in comparable hydrophilicity.…”

Effect of oxidation temperature on physical properties of thermally grown oxide on GaN in N2O ambient

“…In contrary, wet oxidation with O 2 showed a growth rate of 15 times faster than dry oxidation and it provides a smoother surface topography. However, it showed more irregular oxide/GaN interfaces and poorer electrical characteristics than dry oxidation [3]. From those previous studies, it can be concluded that dry oxidation with oxygen provides better electrical characteristics and interface quality, but with slower growth rate as compared to wet oxidation with oxygen.…”

“…Oxygen or air was the ambient regularly performed in dry oxidation [1,4,15e17,19,20,26,53,54] while O 2 , N 2 and Ar as carrier gas of H 2 O vapor has been employed for wet oxidation [3]. For dry oxidation, Wolter and co-workers [53,54,56] found that no or minimal oxide was grown at temperature below 750 C, while Chen et al [16] revealed that the GaN epitaxial layer (1-mm thick) was completely oxidized at temperature higher than 1000 C. Besides, the early stage of oxide growth on GaN had also being investigated by Wolter et al [15].…”

Incorporation of dielectric layers into the processing of III-nitride-based heterostructure field-effect transistors

“…Wolter et al 24 and Readinger et al 25 performed wet and dry oxidation at 900°C and found an averaged growth rate of about 20 nm/h. Adopting this growth rate, we tried growing thermally thin oxide layers on AlGaN at 900°C, but the oxidation affects the electrical behavior of the whole heterostructure significantly and makes the two-dimensional electron gas (2DEG) even disappear.…”