Wettability and interfacial energies in SiC-liquid metal systems

Phase separation of a microsized powder mixture of Si and SiC by Cu–Si alloying

“…It is found that when Si mass concentration is 10 wt%, the activity of dissolved Si is higher than the calculated equilibrium value of 0.0566. This concentration is consistent with the literature report, which shows that Si concentration is about 8.5-9.5 wt% (Nikolopoulos et al, 1992). Therefore, the decomposition of SiC can be efficiently compressed if the Si concentration in the molten Cu-Si alloy is not lower than 10 wt%.…”

“…Furthermore, SiC had a low wetting ability with the liquid Cu-Si alloy. The contact angle between SiC and a liquid Cu-Si alloy (90-91.5 wt% Cu) was larger than 1201 (Nikolopoulos et al, 1992). This low wettability could promote convergence of Cu and Si, and floating-up of SiC powders to the surface.…”

“…The reaction zone had a composition of 8.5-9.8 wt% Si, after 4 h treatment at 1873 K in wettability study of Cu on SiC substrate (Nikolopoulos et al, 1992). This reaction zone could affect the convergence of the liquid Cu and Si.…”

Survey on wetting of SiC by molten metals

“…The commonly used SiC materials, such as reaction bonded SiC (RB-SiC), pressureless sintered SiC (PLS-SiC), hot pressed SiC (HP-SiC), hot isostatic pressed SiC (HIP-SiC), recrystallized SiC (RC-SiC) and single crystals (a-SiC or b-SiC), have different crystal structure, surface polarity and bulk composition with a consequent scatter in the s SV (SiC) values [83]. Some authors [13,51] adopted 1800 mJ m À2 for the value of a-SiC, based on the similar configuration of the a-SiC (0 0 0 1) and the b-SiC (1 1 1) surfaces.…”

Wetting behaviour of Y2O3/AlN additive on SiC ceramics

“…In this case, the Young equation should be corrected for this driving force. 7,10 The smallest contact angle in reactive system is given by Eq. (3),…”