Wettability of Carbon (C), Silicon Carbide (SiC), and Silicon Nitride (Si3N4) with Liquid Silicon (Si)

Iyer, Harish; Xiao, Yuchang; Durlik, Damian; Danaei, Karim; Khajavi, Leili Tafaghodi; Barati, Mansoor

doi:10.1007/s11837-020-04369-0

Cited by 9 publications

(3 citation statements)

References 20 publications

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“…1, d, контактный угол (угол смачивания) составляет ∼ 45 • . Это указывает на то, что расплав Si и подложка вступают в реакционное взаимодействие с SiC [24]. В настоящее время процесс взаимодействия карбида кремния с расплавами является предметом интенсивных исследований, но его механизм остается невыясненным.…”

Section: рентгеновская дифракцияunclassified

Создание темплейтов для гомоэпитаксиального роста 3C-SiC методом прямого сращивания пластин карбида кремния различающихся политипов

Мынбаева¹,

Амельчук²,

Смирнов³

et al. 2022

Физика И Техника Полупроводников

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An approach of direct bonding of SiC wafers of differing polytypes has been implemented in order to create a template for cubic 3C-SiC homoepitaxy. Heteroepitaxial 3C-SiC layers grown by chemical vapor deposition were transferred onto a hexagonal 6H-SiC wafer. The results of structural characterization showed that the quality of 3C-SiC sublimation epitaxy on the templates is comparable to the level of epitaxy of cubic silicon carbide by chemical vapor deposition method. It was confirmed that the 3С-SiC layer transferred onto the 6H-SiC substrate plays the role of a crystalline "seed" that determines cubic polytype of the overgrown SiC layer.

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Section: рентгеновская дифракцияunclassified

Создание темплейтов для гомоэпитаксиального роста 3C-SiC методом прямого сращивания пластин карбида кремния различающихся политипов

Мынбаева¹,

Амельчук²,

Смирнов³

et al. 2022

Физика И Техника Полупроводников

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“…1, d, the contact angle (wetting angle) is ∼ 45 • . This indicates that the Si melt and the substrate react with SiC [24]. At present, the process of interaction of silicon carbide with melts is the subject of intensive studies, but its mechanism remains unclear.…”

Section: X-ray Diffractionmentioning

confidence: 99%

Templates for homoepitaxial growth of 3C-SiC obtained by direct bonding of silicon carbide wafers of differing polytype

et al. 2022

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An approach of direct bonding of SiC wafers of differing polytypes has been implemented in order to create a template for cubic 3C-SiC homoepitaxy. Heteroepitaxial 3C-SiC layers grown by chemical vapor deposition were transferred onto a hexagonal 6H-SiC wafer. The results of structural characterization showed that the quality of 3C-SiC sublimation epitaxy on the templates is comparable to the level of epitaxy of cubic silicon carbide by chemical vapor deposition method. It was confirmed that the 3C-SiC layer transferred onto the 6H-SiC substrate plays the role of a crystalline "seed" that determines cubic polytype of the overgrown SiC layer. Keywords: Silicon carbide, polytypes, direct bonding, templates, sublimation epitaxy.

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“…Simply increasing the Si amount of the droplet in the sessile-drop configuration would not work due to the too high amount of Si required, which could even break the 4H-SiC wafer upon solidification and cooling. One needs to develop a process in which the liquid Si is more spread over the surface than with the only natural spreading allowed by thermodynamic equilibrium (wetting angle of ~40° [14]). This should allow drastic reduction of the Si amount and better control of the reconstructed area dimensions.…”

Section: Introductionmentioning

confidence: 99%

Macrosteps formation on 4H-SiC surfaces via Si melting within a sandwich configuration

Jousseaume

Cauwet

Ferro

2022

Journal of Crystal Growth

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Wettability of Carbon (C), Silicon Carbide (SiC), and Silicon Nitride (Si3N4) with Liquid Silicon (Si)

Cited by 9 publications

References 20 publications

Создание темплейтов для гомоэпитаксиального роста 3C-SiC методом прямого сращивания пластин карбида кремния различающихся политипов

Создание темплейтов для гомоэпитаксиального роста 3C-SiC методом прямого сращивания пластин карбида кремния различающихся политипов

Templates for homoepitaxial growth of 3C-SiC obtained by direct bonding of silicon carbide wafers of differing polytype

Macrosteps formation on 4H-SiC surfaces via Si melting within a sandwich configuration

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