Wetting and interfacial behavior of Cu–Al/SiC systems: Influences of Si ion implantation and Al concentration

Synthesis, Characterization and Wettability of Cu-Sn Alloy on the Si-Implanted 6H-SiC

“…In contrast, a higher Si ion dose can weaken this phenomenon, showing an increased contact angle. In these cases, the σ SV keeps invariant (before ion implantation), or is increased due to the presence of the lattice imperfection and point defects after ion implantation [13], while the σ LV is decreased with the Sn concentration increasing, according to Amore's results [24]. Theoretically speaking, the increased σ SV or/and decreased σ LV can reduce the wettability of Cu-Sn/(Si-)SiC systems based on Young's equation.…”

“…Recently, our group has proved that Mo, Ref. [11] Pd [12] and Si [13] ion implantation can increase the σ SV of 6H-SiC monocrystal substrate by producing lattice imperfections and point defects, and thus the ion implantation is regarded as one of the key factors affecting the wettability of Al, Ref. [13] Al-Cu and [13] Al-Si-(Cu, Mg or Zn) [6,12] on SiC monocrystal substrate.…”

“…[11] Pd [12] and Si [13] ion implantation can increase the σ SV of 6H-SiC monocrystal substrate by producing lattice imperfections and point defects, and thus the ion implantation is regarded as one of the key factors affecting the wettability of Al, Ref. [13] Al-Cu and [13] Al-Si-(Cu, Mg or Zn) [6,12] on SiC monocrystal substrate. For instance, Zhu et al [13] studied the wetting of Al-Cu/Si-implanted SiC wetting couples, indicating that the contact angles of Al-Cu alloys on Si-SiC substrates were raised partly with an increase of the Si ion dose, and the Si ion can evidently improve the wetting of Cu-Al/SiC when the content of Al is no more than 42.9% in Cu.…”

“…[13] Al-Cu and [13] Al-Si-(Cu, Mg or Zn) [6,12] on SiC monocrystal substrate. For instance, Zhu et al [13] studied the wetting of Al-Cu/Si-implanted SiC wetting couples, indicating that the contact angles of Al-Cu alloys on Si-SiC substrates were raised partly with an increase of the Si ion dose, and the Si ion can evidently improve the wetting of Cu-Al/SiC when the content of Al is no more than 42.9% in Cu.…”

“…For the pure Cu/SiC system, a high contact angle was detected due to the formation of the graphite layer at the wetting interface [18]. Various elements such as Al [13], Si [18], and Zr [19] were added into Cu to adjust the wettability of the Cu/SiC system. As reported by Zhou et al [19], excellent wettability (θ ≈ 5 • ) was observed in the Cu-Zr/SiC system at 1200 • C, and the interfacial reaction layer was transformed from a graphite layer to metallic ZrC and Zr 2 Si compounds after adding Zr into Cu.…”