2009 International Conference on Electronic Packaging Technology &Amp; High Density Packaging 2009
DOI: 10.1109/icept.2009.5270628
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Wetting behavior of electrolyte in fine pitch Cu/Sn bumping process by electroplating

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Cited by 3 publications
(2 citation statements)
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“…The polymer liquid was firstly dispensed to wet the photo-resist, and then, the liquid flowed into the vias; the low spinning speed made liquid wet the whole wafer (photo-resist and vias); lastly, the layer thickness was set at a higher spinning speed. During these processes, the 1 (CA between photo-resist and liquid) and 2 (CA between silicon substrate and liquid) were important parameters for wetting behavior [7]. Fig.3 showed the time-dependent viscosity variation of polymer liquids at 25 o C with a shear rate of 1 s -1 .…”
Section: Methodsmentioning
confidence: 99%
“…The polymer liquid was firstly dispensed to wet the photo-resist, and then, the liquid flowed into the vias; the low spinning speed made liquid wet the whole wafer (photo-resist and vias); lastly, the layer thickness was set at a higher spinning speed. During these processes, the 1 (CA between photo-resist and liquid) and 2 (CA between silicon substrate and liquid) were important parameters for wetting behavior [7]. Fig.3 showed the time-dependent viscosity variation of polymer liquids at 25 o C with a shear rate of 1 s -1 .…”
Section: Methodsmentioning
confidence: 99%
“…Furthermore, the galvanic bath did not properly wet the photoresist, resulting in defects in the corners of the patterns due to trapped air bubbles, which masked the surface during galvanization. To solve this, 50 ppm Sodium Chloride was added to the solution as chloride ions behave as a surfactant in the solution [49]. The resulting copper layer is much more uniform and consists of 3-4 mm small crystals and growths with a rate of 32 mm/h.…”
Section: Electroplating and Technology Optimizationmentioning
confidence: 99%