Wetting Behavior of Ternary Au-Ge-X (X = Sb, Sn) Alloys on Cu and Ni

Jin, S.; Valenza, Fabrizio; Novaković, R.; Leinenbach, Christian

doi:10.1007/s11664-013-2497-z

Cited by 4 publications

(3 citation statements)

References 20 publications

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“…Calculations of the nanoscale equilibrium content of a solid impurity in a 1D lattice, taking account of surface anisotropy and elastic stress, do not support a large dissolution of impurity atoms much beyond equilibrium solubility25. Careful analysis of the Sn-rich portion of the ternary Au-Ge-Sn phase diagram48 shows that for our growth conditions, at equilibrium the Sn-rich (more than 90%) droplet has a Ge:Au ratio of close to unity and the growth should occur via the invariant reaction U4: L+AuSn 2 ↔diamond A4+AuSn 4 mediated by the formation of AuSn intermetallic phases. We did not observe the presence of these intermetallic phases within the nanowire (EDX analysis in Supplementary Fig.…”

Section: Discussionmentioning

confidence: 97%

Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1−xSnx nanowires

et al. 2016

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The development of non-equilibrium group IV nanoscale alloys is critical to achieving new functionalities, such as the formation of a direct bandgap in a conventional indirect bandgap elemental semiconductor. Here, we describe the fabrication of uniform diameter, direct bandgap Ge1−xSnx alloy nanowires, with a Sn incorporation up to 9.2 at.%, far in excess of the equilibrium solubility of Sn in bulk Ge, through a conventional catalytic bottom-up growth paradigm using noble metal and metal alloy catalysts. Metal alloy catalysts permitted a greater inclusion of Sn in Ge nanowires compared with conventional Au catalysts, when used during vapour–liquid–solid growth. The addition of an annealing step close to the Ge-Sn eutectic temperature (230 °C) during cool-down, further facilitated the excessive dissolution of Sn in the nanowires. Sn was distributed throughout the Ge nanowire lattice with no metallic Sn segregation or precipitation at the surface or within the bulk of the nanowires. The non-equilibrium incorporation of Sn into the Ge nanowires can be understood in terms of a kinetic trapping model for impurity incorporation at the triple-phase boundary during growth.

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Section: Discussionmentioning

confidence: 97%

Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1−xSnx nanowires

et al. 2016

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“…Thanks to long lasting experience related to the investigation of lead-free solders by wetting experiments [1,8,33,35], we can state that the microstructure evolution after wetting tests is qualitatively comparable to that of a real solder joint [36,37]. Therefore, the interfacial reactions between liquid alloys and solid substrates and the phases subsequently formed at the interface, identified by SEM-EDS analyses, can be analysed by means of the corresponding phase diagrams.…”

Section: Introductionmentioning

confidence: 88%

Wetting and interfacial reactions: Experimental study of the Sb-Sn-X (X = Cu, Ni) systems

Novaković

Delsante

Borzone

2018

J min metall B Metall

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Experimental studies of the Cu-Sb-Sn and Ni-Sb-Sn systems have been carried out by the wetting tests, followed by the analysis of the microstructural evolution occurring at the interface between the liquid alloy and solid substrate. The wetting experiments on the Sb 30 Sn 70 / (Cu, Ni) and Sb 38.4 Sn 61.6 / (Cu, Ni) systems have been performed by using a sessile drop apparatus. The wetting behaviour of the two alloys in contact with Cu-substrate differs from that observed in the case of Ni-substrate. The Sb-Sn alloy / substrate interface was characterised by SEM-EDS analyses. For each system, the solidliquid interactions and the phases formed at the interface were studied with the help of the corresponding phase diagrams.

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“…Nonetheless, the failure mechanism and the relationship between the fracture and microstructure evolution under extreme environment is not yet precise. At the same time, the available information on mechanical properties, microstructure evolution at the interface and the reliability of Au-12Ge solder joints in the extreme environment remains insufficient [20]. Hence, it is essential to investigate the effect of extreme thermal shock on Au-12Ge solder joint, which might provide the theoretical reference for the application of Au-12Ge solder in space electronic devices.…”

Section: Introductionmentioning

confidence: 99%

Effects of Extreme Thermal Shock on Microstructure and Mechanical Properties of Au-12Ge/Au/Ni/Cu Solder Joint

Wang

Xue

Long

et al. 2020

Metals

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Extreme temperature change has generally been the great challenge to spacecraft electronic components, particularly in long, periodic, deep-space exploration missions. Hence, researchers have paid more attention to the reliability of component packaging materials. In this study, the microstructure evolution on the interface of Cu/Ni/Au/Au-12Ge/Au/Ni/Cu joints, as well as the effects of extreme thermal shock on mechanical properties and the fracture mode in the course of extreme thermal changes between −196 and 150 °C, have been investigated. Results revealed that the interface layers comprised of two thin layers of NiGe and Ni5Ge3 compounds after Au-12Ge solder alloy was soldered on the Au/Ni/Cu substrate. After extreme thermal shock tests, the microstructure morphology converted from scallop type to planar one due to the translation from NiGe to Ni5Ge3. Meanwhile, the thickness of interface layer hardly changed. The shear strength of the joints after 300 cycles of extreme thermal shock was 35.1 MPa, which decreased by 19.61%. The fracture location changed from the solder to solder/NiGe interface, and then to the interface of NiGe/Ni5Ge3 IMC layer. Moreover, the fracture type of the joints gradually transformed from ductile fracture mode to brittle mode during thermal shock test. Simultaneously, the formation and extension of defects, such as micro-voids and micro-cracks, were found during the process of thermal shock due to the different thermal expansion coefficient among the solder, interface layer and substrate.

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Wetting Behavior of Ternary Au-Ge-X (X = Sb, Sn) Alloys on Cu and Ni

Cited by 4 publications

References 20 publications

Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1−xSnx nanowires

Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1−xSnx nanowires

Wetting and interfacial reactions: Experimental study of the Sb-Sn-X (X = Cu, Ni) systems

Effects of Extreme Thermal Shock on Microstructure and Mechanical Properties of Au-12Ge/Au/Ni/Cu Solder Joint

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