Wetting-Layer-Free AlGaN Quantum Dots for Ultraviolet Emitters

Schifani, Guido; Frisch, Thomas; Brault, J.; Vennéguès, P.; Matta, Samuel; Korytov, Maxim; Damilano, B.; Massies, J.; Aqua, Jean-Noël

doi:10.1021/acsanm.9b02546

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“…6 The situation is quite different in the case of AlyGa1-yN QD since temperature dependent photoluminescence (PL) measurements have shown a weak decrease of the integrated PL intensity from cryogenic temperatures up to room temperature of one order of magnitude or less, 7,8,9 compared to more than two order of magnitude in the case of QW. 10,11 In addition, using specific growth conditions and/or surface orientations, a further improved integrated PL intensity can be obtained by tailoring the QD shape, 9,12,13 which can also be combined with a modification of the wavelength emission. 14,15,16 The MBE grown AlyGa1-yN QD are spontaneously formed using a Stranski-Krastanov growth mode where a transition from a 2 dimensional (D) to a 3D layer occurs after the deposition of an amount above a critical thickness (h2D-3D).…”

Section: Introductionmentioning

confidence: 99%

DUV LEDs based on AlGaN quantum dots

Brault¹,

Khalfioui²,

Leroux³

et al. 2021

Gallium Nitride Materials and Devices XVI

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Deep ultra-violet (DUV) light emitting diodes (LED) are expected to be the next generation of UV sources, offering significant advantages such as compactness, low consumption and long lifetimes. Yet, improvements of their performances are still required and the potential of AlyGa1-yN quantum dots as DUV emitters is investigated in this study. Using a stress induced growth mode transition, quantum dots (QD) are spontaneously formed on Al0.7Ga0.3N/AlN heterostructures grown on sapphire substrates by molecular beam epitaxy. By increasing the QD Al composition, a large shift of the QD photoluminescence in the UV range is observed, going from an emission in the near UV for GaN QD down to the UVC region for Al0.4Ga0.6N QD. A similar behavior is observed for electroluminescence (EL) measurements performed on LED structures and an emission ranging from the UVA (320-340 nm) down to the UVC (265-280 nm) has been obtained. The main performances of Al0.7Ga0.3N based QD LED are presented in terms of electrical and optical characteristics. In particular, the emission dependence on the input current density, including the emitted wavelength, the optical power and the external quantum efficiency are shown and discussed.

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