Which is cooler, trench or multi-epitaxy? Cutting edge approach for the silicon limit by the super trench power MOS-FET (STM)

Minato, T.; Nitta, T.; Uenisi, A.; Yano, Maasa; Harada, M.; Hine, S.

doi:10.1109/ispsd.2000.856776

Cited by 25 publications

(13 citation statements)

References 6 publications

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“…2. Multi-implant multiepitaxy (MEMI) and trench-filling epitaxial growth (TFEG) are the two technologies under study [8]. As a main structural difference, p-pillar doping concentration (N a ) shows a uniform or undulated profile as a function of depth for TFEG and MEMI, respectively.…”

Section: Device and Circuit Simulation Descriptionmentioning

confidence: 99%

Origin of Anomalous <inline-formula> <tex-math notation="LaTeX">$C_{\mathrm {OSS}}$ </tex-math></inline-formula> Hysteresis in Resonant Converters With Superjunction FETs

Roig

Bauwens

2015

IEEE Trans. Electron Devices

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Output capacitance (C OSS ) hysteresis has recently been discovered as a new source of power loss in resonant converters with advanced superjunction (SJ) FETs. This brief unveils the physical mechanism responsible for C OSS hysteresis by means of mixed-mode simulations. A new physical effect, based on stranded charges, is observed in the SJ-FETs processed by multi-implant multiepitaxy with small cell pitch. The alternative trench-filling epitaxial growth is a process suitable to address the resonant converters due to its inherent immunity to the C OSS hysteresis.

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Section: Device and Circuit Simulation Descriptionmentioning

confidence: 99%

Origin of Anomalous <inline-formula> <tex-math notation="LaTeX">$C_{\mathrm {OSS}}$ </tex-math></inline-formula> Hysteresis in Resonant Converters With Superjunction FETs

Roig

Bauwens

2015

IEEE Trans. Electron Devices

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“…Le concept du transistor DT-SJMOS (Deep Trench SuperJunction MOSFET) se base sur plusieurs publications [43], [44], [45], notamment les travaux de Glenn [46]. En effet, si la Superjonction reste un principe général, les procédés de fabrication de composants se basant sur ce concept sont nombreux.…”

Section: Ii241 Présentation De La Structureunclassified

Conception de transistors MOS haute tension (1 200 volts) pour l'électronique de puissance

Théolier

2010

E.J.E.E

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“…[1][2][3] Siliconbased power devices utilizing an SJ structure are commercially available, which demonstrate higher performance beyond the Si theoretical limitation. [4][5][6][7] Recently, the 4H poly-type silicon carbide (4H-SiC) material has attracted considerable attention for the fabrication of power devices owing to its superior physical properties than those of Si. 8,9) Nevertheless, a 4H-SiC unipolar device with a V BD level of several kilo voltages shows an undesirable increase in the resistance of the drift layer, exhibiting inferior performance (higher R on ) than Si-based insulated gate bipolar transistor (Si-IGBT) devices.…”

Section: Introductionmentioning

confidence: 99%

Influence of growth pressure on filling 4H-SiC trenches by CVD method

Kojima

Kosugi

et al. 2015

Jpn. J. Appl. Phys.

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To construct a superjunction structure consisting of p/n columns, narrow stripe-shaped trenches (∼1.5 µm wide and ∼4.7 µm deep) preformed on an n+ 4H-SiC substrate were filled by the hot-wall CVD method using a conventional gas reaction system, SiH4:C3H8:H2. The influences of growth pressure on the coverage distribution of epilayers and the corresponding filling efficiency (the thickness ratio of epilayers on trench bottom and mesa top) were investigated. Two benefits of increasing the growth pressure from 10 to 38 kPa were found: one is the reduced growth around the mesa surface, which lessens the risk of void formation; the other is a high filling rate as well as an improved filling efficiency up to ∼7. By supplying source gases at high flow rates, a void-free trench filling with a filling rate of ∼1.3 µm/h was successfully achieved at 38 kPa.

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Which is cooler, trench or multi-epitaxy? Cutting edge approach for the silicon limit by the super trench power MOS-FET (STM)

Cited by 25 publications

References 6 publications

Origin of Anomalous <inline-formula> <tex-math notation="LaTeX">$C_{\mathrm {OSS}}$ </tex-math></inline-formula> Hysteresis in Resonant Converters With Superjunction FETs

Origin of Anomalous <inline-formula> <tex-math notation="LaTeX">$C_{\mathrm {OSS}}$ </tex-math></inline-formula> Hysteresis in Resonant Converters With Superjunction FETs

Conception de transistors MOS haute tension (1 200 volts) pour l'électronique de puissance

Influence of growth pressure on filling 4H-SiC trenches by CVD method

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