Why abrasive free Cu slurry is promising?

Kamigata, Yasuo; Kurata, Y.; Masuda, Katsuyuki; Amanokura, Jin; Yoshida, Masato; Hanazono, M.

doi:10.1557/proc-671-m1.3

Cited by 22 publications

(3 citation statements)

References 1 publication

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“…In Cu CMP process, the excess Cu film and metal barrier layer must be removed to fabricate Cu metallization. Typically, there are three main steps in Cu CMP process [64]. The first step is Cu film removal, stopping on the barrier layer.…”

Section: Cu Chemical Mechanical Polishingmentioning

confidence: 99%

Copper Metal for Semiconductor Interconnects

Cheng¹,

Lee²,

Huang³

2018

Noble and Precious Metals - Properties, Nanoscale Effects and Applications

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Resistance-capacitance (RC) delay produced by the interconnects limits the speed of the integrated circuits from 0.25 mm technology node. Copper (Cu) had been used to replace aluminum (Al) as an interconnecting conductor in order to reduce the resistance. In this chapter, the deposition method of Cu films and the interconnect fabrication with Cu metallization are introduced. The resulting integration and reliability challenges are addressed as well.

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Section: Cu Chemical Mechanical Polishingmentioning

confidence: 99%

Copper Metal for Semiconductor Interconnects

Cheng¹,

Lee²,

Huang³

2018

Noble and Precious Metals - Properties, Nanoscale Effects and Applications

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“…Copper CMP typically requires at least two steps [16,102]. The wafers are placed face-down on a rotating pad on which the slurry is dispensed.…”

Section: Chemical Mechanical Polishingmentioning

confidence: 99%

Process Technology for Copper Interconnects

Gambino

2012

Handbook of Thin Film Deposition

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“…2 Liquid phase consists of deionized ͑DI͒ water with additives like oxidizers, complexing agents, inhibiting agents, and surfactants. 3 Solid phase consists of abrasives, which are typically metal oxides, e.g., alumina, silica, ceria, etc.…”

mentioning

confidence: 99%

Chemical Mechanical Polishing Using Mixed Abrasive Slurries

Jindal

Hegde

Babu

2002

Electrochem. Solid-State Lett.

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Chemical mechanical polishing ͑CMP͒ of metal and dielectric films was performed using mixed abrasive slurries ͑MAS͒. MAS containing alumina and silica particles dispersed in deionized water were evaluated as second step slurries for Cu damascene polishing. It was demonstrated that MAS with proper selection of constituents and composition of abrasive particles can yield desired slurry/CMP characteristics. Based on the results of transmission electron microscope and particle size analysis of the abrasives in these MAS, possible reasons for the improved CMP performance are discussed.Chemical mechanical polishing ͑CMP͒ has emerged as a viable technique for planarizing metal and dielectric films for the fabrication of microelectronic devices. CMP is used to remove the overburden Cu from damascene structures and to achieve global planarization. Polishing of materials like Ta and tantalum nitride ͑TaN͒, used as a liner layer for Cu to serve as both an adhesion promoter and as a diffusion barrier in damascene patterning, has also gained importance in the recent years. Due to the vastly different mechanical and chemical properties of Cu and the barrier layer ͑Ta or TaN͒, these layers are polished sequentially in two separate steps. The main concerns in this patterning process are dishing of Cu lines and erosion of nearby areas. 1 Minimization of these phenomena in a damascene CMP process requires that the polishing be highly selective to Ta or TaN during the second step polishing. In addition, the film surface after CMP must be free of defects such as pits, microscratches, and particles.Typical slurries contain two phases, namely, liquid and solid phases even though some abrasive free slurries have been recently proposed. 2 Liquid phase consists of deionized ͑DI͒ water with additives like oxidizers, complexing agents, inhibiting agents, and surfactants. 3 Solid phase consists of abrasives, which are typically metal oxides, e.g., alumina, silica, ceria, etc. In single abrasive slurries ͑SAS͒, the solid phase consists of only one type of abrasive particle. Despite widespread use of SAS at all levels of metallization, polish rate selectivity, surface finish, and slurry stability still remain as major challenges. 4 Mixed abrasive slurries ͑MAS͒ consist of a mixture of at least two types of abrasive particles, which can be chosen from inorganic ͑alumina, silica, ceria, etc.͒ or organic ͑poly-meric resins͒ groups. 5 It has been observed that some of the problems associated with the use of SAS can be easily controlled by using MAS with proper composition and choice of constituents of the solid phase. In this paper, slurries containing alumina and silica particles dispersed in DI water at pH 4 have been studied for the second step Cu damascene polishing process. The modified abrasives in MAS are evaluated with respect to their particle size, surface morphology, and surface potential/charge. Arguments are presented to account for the improved CMP characteristics of these particles. ExperimentalChemical mechanical polishing.-Polish...

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Why abrasive free Cu slurry is promising?

Cited by 22 publications

References 1 publication

Copper Metal for Semiconductor Interconnects

Copper Metal for Semiconductor Interconnects

Process Technology for Copper Interconnects

Chemical Mechanical Polishing Using Mixed Abrasive Slurries

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