Wide-angle and broadband graded-refractive-index antireflection coatings

Zhang, Junchao; Xiong, Limin; Fang, Ming; He, Hongbo

doi:10.1088/1674-1056/22/4/044201

Cited by 19 publications

(7 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…To see if nanostructuring has the expected , angle-independent nature, the EQEs of the GaInP SC were measured at different angles of 0°, 45°, and 60°. The angle-dependent EQEs are shown in Figure , and the related calculational current densities under AM1.5D (1000 W/m 2 ) are shown in inset tables for each subplot.…”

Section: Resultsmentioning

confidence: 99%

Optical Performance Assessment of Nanostructured Alumina Multilayer Antireflective Coatings Used in III–V Multijunction Solar Cells

Reuna

Hietalahti

Aho

et al. 2022

ACS Appl. Energy Mater.

View full text Add to dashboard Cite

The optical performance of a multilayer antireflective coating incorporating lithography-free nanostructured alumina is assessed. To this end, the performance of single-junction GaInP solar cells and four-junction GaInP/GaAs/GaInNAsSb/GaInNAsSb multijunction solar cells incorporating the nanostructured alumina is compared against the performance of similar solar cells using conventional double-layer antireflective coating. External quantum efficiency measurements for GaInP solar cells with the nanostructured coating demonstrate angle-independent operation, showing only a marginal difference at 60° incident angle. The average reflectance of the nanostructured antireflective coating is ∼3 percentage points smaller than the reflectance of the double-layer antireflective coating within the operation bandwidth of the GaInP solar cell (280–710 nm), which is equivalent of ∼0.2 mA/cm 2 higher current density at AM1.5D (1000 W/m 2 ). When used in conjunction with the four-junction solar cell, the nanostructured coating provides ∼0.8 percentage points lower average reflectance over the operation bandwidth from 280 to 1380 nm. However, it is noted that only the reflectance of the bottom GaInNAsSb junction is improved in comparison to the planar coating. In this respect, since in such solar cells the bottom junction typically is limiting the operation, the nanostructured coating would enable increasing the current density ∼0.6 mA/cm 2 in comparison to the standard two-layer coating. The light-biased current–voltage measurements show that the fabrication process for the nanostructured coating does not induce notable recombination or loss mechanisms compared to the established deposition methods. Angle-dependent external quantum efficiency measurements incline that the nanostructured coating excels in oblique angles, and due to low reflectance at a 1000–1800 nm wavelength range, it is very promising for next-generation broadband multijunction solar cells with four or more junctions.

show abstract

Section: Resultsmentioning

confidence: 99%

Optical Performance Assessment of Nanostructured Alumina Multilayer Antireflective Coatings Used in III–V Multijunction Solar Cells

Reuna

Hietalahti

Aho

et al. 2022

ACS Appl. Energy Mater.

View full text Add to dashboard Cite

show abstract

“…If necessary, antireflection coatings can be used to reduce internal trapping. [16] Note that the quantum efficiency of the R5509-43 phototube decreases above 1350 nm, which is near the peak of emission band D. Since band D extends to 1600 nm [2] a large fraction (possibly 50%) of the band D emissions are not included in LD or LU. Gamma ray spectroscopy would be a better way to measure luminosities, using a cryogenic germanium photodiode with a high quantum efficiency over the full GaAs emission spectrum.…”

Section: Luminosities Vs Ne and Nbmentioning

confidence: 99%

How silicon and boron dopants govern the cryogenic scintillation properties of N-type GaAs

Derenzo

Bourret

Frank‐Rotsch

et al. 2021

Nuclear Instruments and Methods in Physics Research Section A:

View full text Add to dashboard Cite

“…The value of 43 photons/keV for sample #13316 is an underestimate because (1) it does not include emissions above 970 nm and (2) the higher refractive index of GaAs results in more internal trapping than the standards. The index of refraction is 3.45 at 930 nm [29] and anti-reflection coatings can be used to reduce internal trapping of the scintillation light [30]. Figure 6 shows the thermal quenching of the 850 nm and 930 nm emission bands during 50 keVp X-ray excitation.…”

Section: B X-ray Excitationmentioning

confidence: 99%

Cryogenic scintillation properties of n-type GaAs for the direct detection of MeV/c2 dark matter

Derenzo

Bourret

Hanrahan

et al. 2018

Journal of Applied Physics

View full text Add to dashboard Cite

This paper is the first report of n-type GaAs as a cryogenic scintillation radiation detector for the detection of electron recoils from interacting dark matter (DM) particles in the poorly explored MeV/c 2 mass range. Seven GaAs samples from two commercial suppliers and with different silicon and boron concentrations were studied for their low temperature optical and scintillation properties. All samples are n-type even at low temperatures and exhibit emission between silicon donors and boron acceptors that peaks at 1.33 eV (930 nm). The lowest excitation band peaks at 1.44 eV (860 nm) and the overlap between the emission and excitation bands is small. The X-ray excited luminosities range from 7 to 43 photons/keV. Thermally stimulated luminescence measurements show that n-type GaAs does not accumulate metastable radiative states that could cause afterglow. Further development and use with cryogenic photodetectors promises a remarkable combination of large target size, ultra-low backgrounds, and a sensitivity to electron recoils of a few eV that would be produced by DM particles as light as a few MeV/c 2 .

show abstract

Wide-angle and broadband graded-refractive-index antireflection coatings

Abstract: Wide-angle and broadband graded-refractive-index antireflection coatings Zhang Jun-Chao(张俊超) a)b) † , Xiong Li-Min(熊利民) a) , Fang Ming(方明) b) , and He Hong-Bo(贺洪波) b) a) Optic and Laser Division,

Cited by 19 publications

References 23 publications

Optical Performance Assessment of Nanostructured Alumina Multilayer Antireflective Coatings Used in III–V Multijunction Solar Cells

Optical Performance Assessment of Nanostructured Alumina Multilayer Antireflective Coatings Used in III–V Multijunction Solar Cells

How silicon and boron dopants govern the cryogenic scintillation properties of N-type GaAs

Cryogenic scintillation properties of n-type GaAs for the direct detection of MeV/c2 dark matter

Contact Info

Product

Resources

About

Wide-angle and broadband graded-refractive-index antireflection coatings

Abstract: Wide-angle and broadband graded-refractive-index antireflection coatings Zhang Jun-Chao(张俊超) a)b) † , Xiong Li-Min(熊利民) a) , Fang Ming(方 明) b) , and He Hong-Bo(贺洪波) b) a) Optic and Laser Division,

Cited by 19 publications

References 23 publications

Optical Performance Assessment of Nanostructured Alumina Multilayer Antireflective Coatings Used in III–V Multijunction Solar Cells

Optical Performance Assessment of Nanostructured Alumina Multilayer Antireflective Coatings Used in III–V Multijunction Solar Cells

How silicon and boron dopants govern the cryogenic scintillation properties of N-type GaAs

Cryogenic scintillation properties of n-type GaAs for the direct detection of MeV/c2 dark matter

Contact Info

Product

Resources

About

Abstract: Wide-angle and broadband graded-refractive-index antireflection coatings Zhang Jun-Chao(张俊超) a)b) † , Xiong Li-Min(熊利民) a) , Fang Ming(方明) b) , and He Hong-Bo(贺洪波) b) a) Optic and Laser Division,