Wide band-gap II–VI compounds—can efficient doping be achieved?

Desnica, U. V.

doi:10.1016/s0042-207x(98)00081-5

Cited by 16 publications

(3 citation statements)

References 65 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…High crystalline and optical quality ZnTe epilayers on VGF-grown ZnTe substrates have been now demonstrated by both molecular beam epitaxy (MBE) [4] and metalorganic vapour phase epitaxy (MOVPE) [5][6][7]. ZnTe crystals usually exhibit p-type conductivity and a strong tendency to compensate donor dopant impurities [8,9]. Still, n-type ZnTe epilayers (with RT electron concentrations up to 4×10…”

Section: Introductionmentioning

confidence: 99%

Effect of precursors stoichiometry on morphology, crystallinity and electrical properties of ZnTe epilayers grown on (100)GaAs by MOVPE

Paiano¹,

Prete²,

Lovergine³

et al. 2005

Cryst. Res. Technol.

View full text Add to dashboard Cite

The effect of precursors vapour stoichiometry on the morphological, structural and electrical properties of nominally undoped ZnTe grown on (100)GaAs by metalorganic vapour phase epitaxy is reported. The epilayers were grown at 350°C using dimethylzinc (Me 2 Zn) and di-isopropyltelluride, varying their molar flow rate ratios (MFRs) between 0.17 and 3.10. Growth in nearly stoichiometric (MFR=1.03) conditions results in best surface morphology, while samples grown in Te-rich conditions (MFR>1.7) showed micronsize hollow defects (with surface densities up to ∼10 6 cm -2) elongated in one of the 〈011〉 in-plane directions. The defects are associated to a local structural disorder of the material, ascribed to the formation of a Ga 2 Te 3 extrinsic phase at the ZnTe/GaAs interface. Ohmic contacts to p-ZnTe epilayers were prepared by tungsten evaporation and annealing at 350°C. The RT hole concentration in the epilayers varies almost linearly with Me 2 Zn molar flow between 2×10 15 cm -3 and 5×10 16 cm -3 . Temperature-dependent Hall measurements performed on samples grown at MFR≤1.03 demonstrate that the material p-type conductivity originates from a single acceptor centre with an ionisation energy between 94.7 meV and 118 meV, its concentration being in the 10 16 cm -3 range and slowly increasing with Me 2 Zn flow. We ascribe this acceptor to a complex formed by a substitutional carbon atom on a Te site and a donor on a nearest neighbor site (C Te -D Zn ), the donor impurity being further identified as Ga diffusing from the substrate.

show abstract

Section: Introductionmentioning

confidence: 99%

Effect of precursors stoichiometry on morphology, crystallinity and electrical properties of ZnTe epilayers grown on (100)GaAs by MOVPE

Paiano¹,

Prete²,

Lovergine³

et al. 2005

Cryst. Res. Technol.

View full text Add to dashboard Cite

show abstract

“…II-VI group semiconductors of CdTe, CdSe, CdS, ZnSe, and ZnTe require to be doped to be applied in device fabrication like a solar cell. Generally, the compound semiconductors of ZnSe, CdSe, and CdS can easily be doped on the n-side, ZnTe on the p-side, and CdTe on both the p-and n-side [141,142]. The ability to be doped with both carrier-type doping makes it available and beneficial in making homo-and hetero-junction devices [142].…”

Section: Doping Of Ii-vi Semiconductors and Compoundsmentioning

confidence: 99%

Emerging II-VI wide bandgap semiconductor device technologies

Kuddus,

Mostaque,

Mouri

et al. 2024

Phys. Scr.

View full text Add to dashboard Cite

The demand for advanced electronic and optoelectronic devices has driven significant research and development efforts toward exploring emerging semiconductor materials with enhanced performance characteristics. II-VI semiconductors have been studied extensively owing to their wide bandgap characteristics, which enable high electron mobility, excellent thermal stability, and resistance to radiation damage. These properties make them well-suited for a range of applications, including solar cells, light-emitting diodes (LEDs), photodetectors, lasers, sensors, and field effect transistors (FETs). In II-VI compounds, both ionic and covalent bonds exist with a higher electronegative nature of the VI-group elements than II-group elements. This existing ionic behavior strongly influences the binding of valence band electrons rather strongly to the lattice atoms. Thus, the II-VI semiconductors such as CdS, CdTe, ZnS, ZnSe, and CdSe possess wide tunable bandgaps (~0.02 to ≥ 4.0 eV) and high absorption coefficients of approximately 106 cm-1, setting them apart from other semiconductors formed by a covalent bond with closely equal atomic weights. This review article delves into the physics of II-VI semiconductor homo/heterojunctions, and the steps involved in device fabrication including lithography, etching, metallization, stability (oxidation and passivation) and polymerization together with several doping strategies. Furthermore, this review explores the process for tuning the distinct physical and chemical properties and a substantial advancement in electronic, and optoelectronic devices, including tools, cutting-edge equipment, and instrumentations. This comprehensive review provides detailed insights into the potential and technological progress of II-VI wide bandgap semiconductor device technology including experienced challenges and prospects.

show abstract

“…In principle, the higher conduction band minimum than the potential of hydrogen evolution reaction (HER) and the wide solar spectral response make CdS and CdSe promising candidates for water splitting. Unfortunately, undoped CdS and CdSe can only serve as the photoanode for oxygen evolution reaction (OER) due to their natural n‐type polarity . Similar to many nonoxide materials, the application of CdS and CdSe in water splitting is also devalued by heavy anodic photocorrosion at the semiconductor/electrolyte interface .…”

Section: Introductionmentioning

confidence: 99%

Stable p‐type Cu:CdS_1−xSe_x/Pt Thin‐Film Photocathodes with Fully Tunable Bandgap for Scavenger‐Free Photoelectrochemical Water Splitting

Yang

et al. 2020

Solar RRL

View full text Add to dashboard Cite

Natural Cd‐based group II–VI semiconductors in photoelectrochemical (PEC) cells are normally used as photoanodes, whose applications are hence hindered by the heavy anodic photocorrosion. Herein, a series of p‐type Cu‐doped CdS1−xSex alloy thin films as photocathodes for water splitting is reported. These alloyed films, synthesized via a simple but well‐controlled physical vapor deposition (PVD) method, are fully tunable in chemical composition, which leads to a tunable bandgap from 1.69 to 2.40 eV. Benefiting from the broadened visible light response, the Cu:CdS0.7Se0.3 photocathode with Pt nanoparticles (NPs) as cocatalysts shows a 37% higher photocurrent density and a higher Faradaic efficiency compared with previously reported Cu:CdS/Pt. More importantly, good stability of the Cu:CdS0.7Se0.3/Pt photocathode in scavenger‐free electrolyte for PEC water splitting is first achieved, with 80% remaining photocurrent and no significant change in 5 h. The released Cd2+ in the electrolyte for the p‐type Cu:CdS1−xSex/Pt photocathode is suppressed by more than three orders of magnitude as compared with a traditional n‐type CdS1−xSex/Pt photoanode. The results reveal the feasibility of Cd‐based group II–VI materials as the thin‐film photocathode for PEC water splitting. The tunable bandgap and durability of p‐type Cu:CdS1−xSex can contribute to future heterojunction structure design in PEC cells.

show abstract

Wide band-gap II–VI compounds—can efficient doping be achieved?

Cited by 16 publications

References 65 publications

Effect of precursors stoichiometry on morphology, crystallinity and electrical properties of ZnTe epilayers grown on (100)GaAs by MOVPE

Effect of precursors stoichiometry on morphology, crystallinity and electrical properties of ZnTe epilayers grown on (100)GaAs by MOVPE

Emerging II-VI wide bandgap semiconductor device technologies

Stable p‐type Cu:CdS_1−xSe_x/Pt Thin‐Film Photocathodes with Fully Tunable Bandgap for Scavenger‐Free Photoelectrochemical Water Splitting

Contact Info

Product

Resources

About

Wide band-gap II–VI compounds—can efficient doping be achieved?

Cited by 16 publications

References 65 publications

Effect of precursors stoichiometry on morphology, crystallinity and electrical properties of ZnTe epilayers grown on (100)GaAs by MOVPE

Effect of precursors stoichiometry on morphology, crystallinity and electrical properties of ZnTe epilayers grown on (100)GaAs by MOVPE

Emerging II-VI wide bandgap semiconductor device technologies

Stable p‐type Cu:CdS1−xSex/Pt Thin‐Film Photocathodes with Fully Tunable Bandgap for Scavenger‐Free Photoelectrochemical Water Splitting

Contact Info

Product

Resources

About

Stable p‐type Cu:CdS_1−xSe_x/Pt Thin‐Film Photocathodes with Fully Tunable Bandgap for Scavenger‐Free Photoelectrochemical Water Splitting