2020
DOI: 10.1039/d0tc00862a
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Wide band gap pyromellitic diimides for photo stable n-channel thin film transistors

Abstract: Wide energy gaps of PyDI derivatives lead to excellent photostability in OFETs at illumination conditions and transparency on transparent substrates.

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Cited by 12 publications
(7 citation statements)
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“…The dynamics of photogenerated excitons in OSCs mainly consist of the following processes: (i) exciton generation upon light absorption, (ii) exciton diffusion, (iii) exciton dissociation or quenching, and (iv) free carriers transport or exciton annihilation. To suppress the photoelectric response of OFETs, some strategies such as synthesis of large-bandgap OSC molecules and reduction of trap density have been proposed to inhibit the exciton generation or exciton dissociation processes. However, these methods are limited by the poor universality and the low tolerance to light (far behind the solar irradiance value of ∼138 mW/cm 2 ). Moreover, the suppression of the photoelectric response is highly challenging in the preferred polycrystalline OSC films in large-area organic electronics because exciton dissociation can be effectively promoted by the high-density charge traps …”
Section: Introductionmentioning
confidence: 99%
“…The dynamics of photogenerated excitons in OSCs mainly consist of the following processes: (i) exciton generation upon light absorption, (ii) exciton diffusion, (iii) exciton dissociation or quenching, and (iv) free carriers transport or exciton annihilation. To suppress the photoelectric response of OFETs, some strategies such as synthesis of large-bandgap OSC molecules and reduction of trap density have been proposed to inhibit the exciton generation or exciton dissociation processes. However, these methods are limited by the poor universality and the low tolerance to light (far behind the solar irradiance value of ∼138 mW/cm 2 ). Moreover, the suppression of the photoelectric response is highly challenging in the preferred polycrystalline OSC films in large-area organic electronics because exciton dissociation can be effectively promoted by the high-density charge traps …”
Section: Introductionmentioning
confidence: 99%
“…The respective HOMO and LUMO levels for C8‐PDI, C8‐NDI, C8‐PMDI are (−6.13, −4.11) eV, (−5.54, −2.48) eV, (−5.44, −0.88) eV. [ 38,39 ] A decreased trend in the energy levels and bandgap narrowing can be clearly seen with an extended conjugation from C8‐PMDI to C8‐PDI. Notably, the larger gap in LUMO levels between photogate and channel material can prevent carrier back‐trapping; while a lower‐lying HOMO level of the photogate is favorable for stabilizing trapped charges.…”
Section: Resultsmentioning
confidence: 99%
“…Despite the low mobility, it also makes a meaningful demonstration that the wide band gap is beneficial to semiconductor materials exhibiting excellent high transparency. [ 110 ] Recently, an embedded nitrogenous anthracene derivative SM52 with two imine groups has been reported. [ 38 ] The advantage of this molecular design is that, on the one hand, the utilization of the two carbonyl groups of the imide substituent can effectively lower the LUMO energy level.…”
Section: Organic Small‐molecule Semiconductors With High Electron Mob...mentioning
confidence: 99%