Wide‐band high‐efficiency Ku‐band power amplifier

Abstract

A 37 dBm power amplifier (PA) is designed on a 0.25 µm optical T-gate pseudomorphic high electron mobility transistor (pHEMT) technology. The design of this two-stage PA along with a step-by-step design procedure is presented in this paper. This methodology can be used for design of PA in different technologies and frequencies. The PA delivers 5 W output power over the frequency band of 13-19 GHz. It shows average power-added efficiency of 37% and large signal gain of 15 dB in measurements which is consistent with simulation results. The output power and efficiency of the realised amplifier reach maximums of 37.6 dBm and 45%, respectively. Considering output power, bandwidth, chip area and efficiency, this PA exhibits competitive performance compared to the reported PAs.

Highly reliable 10‐W X/Ku‐band pHEMT monolithic microwave integrated circuit power amplifier

“…This PA has the widest bandwidth among other works of Table 2. The figure of merit (FOM) presented in [23] is employed here to compare the performance of this PA with other designs. As the (4) shows, this FOM is the ratio of the output power in Watt, power added efficiency in per cent and bandwidth in GHz to the area in square…”

Sub‐optimal matching method for dual‐band class‐J power amplifier using real frequency technique

“…To simplify the analysis without loss of generality, the intrinsic current of class-B is assumed as (4). If only the second harmonic is considered and higher harmonics are shorted, the voltage waveform could be written as (5). The current and voltage are, respectively, normalised such that i dc = 1 and v dc = 1…”

“…The primary approach is to design reconfigurable circuits with switches or electronically tunable elements as introduced in [1], while it is inapplicable in concurrent mode. The second one is to design a broadband MN covering the required operation bands [2][3][4][5]. However, the performance of PA is always ordinary in the whole band, as the MN should be physically realisable and its impedances are restricted rather than arbitrary at the target bands.…”

2D curtailed harmonic memory polynomial for reduced complexity in concurrent dual‐band modelling and digital predistortion with the second band at harmonic frequency

“…5G) [3]. It has led interest in the design of ultrawideband [4], and dual-band [5] power amplifiers (PAs). However, multi-band operation gives rise to distortion due to crossmodulation along with intermodulation distortion (IMD) of PA.…”

“…Recently, research in PA design has focused towards ultrawideband application [4], and while supporting various generation signals, harmonics of one carrier signal may interfere with the frequency range of another carrier signal. This is shown in Fig.…”