Wide-FOV FPAs for a shipboard distributed aperture system

Gulbransen, David J.; Black, Stephen H.; Childs, A. C.; Fletcher, Christopher L.; Johnson, S. M.; Radford, W. A.; Venzor, G. M.; Sienicki, J.P.; Thompson, Avery; Griffith, J. H.; Buell, A. A.; Vilela, M. F.; Newton, Michael; Takken, E. H.; Waterman, James; Krapels, Keith A.

doi:10.1117/12.555122

Cited by 10 publications

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“…The effort validated key principles of the technology and demonstrated that it will be successful for astronomy. The history leading up to this development is reviewed in Melkonian et al Gulbransen et al (2004). This effort will not only provide cost savings, but it will also provide 1K, 2K and 4K detectors in a single run.…”

Section: Introductionmentioning

confidence: 97%

Large format MBE HgCdTe on silicon detector development for astronomy

et al. 2015

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The Center for Detectors at Rochester Institute of Technology and Raytheon Vision Systems (RVS) are leveraging RVS capabilities to produce large format, short-wave infrared HgCdTe focal plane arrays on silicon (Si) substrate wafers. Molecular beam epitaxial (MBE) grown HgCdTe on Si can reduce detector fabrication costs dramatically, while keeping performance competitive with HgCdTe grown on CdZnTe. Reduction in detector costs will alleviate a dominant expense for observational astrophysics telescopes. This paper presents the characterization of 2.5µm cutoff MBE HgCdTe/Si detectors including pre-and post-thinning performance. Detector characteristics presented include dark current, read noise, spectral response, persistence, linearity, crosstalk probability, and analysis of material defects.

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Section: Introductionmentioning

confidence: 97%

Large format MBE HgCdTe on silicon detector development for astronomy

et al. 2015

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“…As it stands now, HgCdTe on Si material grown by molecular beam epitaxy (MBE) has been demonstrated as a viable technology for short wavelength (SWIR) and mid wavelength (MWIR) IR focal plane arrays 1–8. However, the goal of advancing this material technology to the long wavelength (LWIR) regime has been hampered by the nearly two orders of magnitude increase in dislocation density with respect to HgCdTe grown on lattice matched bulk CdZnTe substrates.…”

Section: Introductionmentioning

confidence: 99%

Hg based II–VI compounds on non‐standard substrates

Brill

Chen

Wijewarnasuriya

et al. 2012

Physica Status Solidi (a)

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The Army Research Laboratory (ARL) is pursuing scalable infrared (IR) material technologies to meet the growing need for large format arrays. A two pronged approach is being undertaken at ARL using II-VI semiconductor materials. The first encompasses the well developed IR material system HgCdTe but grown on large area, extremely lattice mismatched Si (112) substrates. To overcome the high dislocation density associated with the large mismatch within the as-grown material, ARL has successfully pursued a postgrowth thermal cycle annealing (TCA) process to reduce the dislocation density by an order of magnitude. Current results show HgCdTe/Si material can consistently be achieved with dislocation density values on the order of 1 Â 10 6 cm À2 . The second approach involves developing HgCdSe material using lattice matched, large area, and commercially available III-V substrates, specifically GaSb. Preliminary results indicate that quality HgCdSe growth by molecular beam epitaxy (MBE) can be achieved and that the bandgap of the material can be controlled through the Cd/Se ratio of fluxes used during growth.

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Control and growth of middle wave infrared (MWIR) Hg(1−x)CdxTe on Si by molecular beam epitaxy

Vilela

Buell

Newton

et al. 2005

Journal of Elec Materi

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Middle wave infrared (MWIR) HgCdTe p-on-n double-layer heterojunctions (DLHJs) for infrared detector applications have been grown on 100-mm Si (112) substrates by molecular beam epitaxy (MBE) for large format 2,560 ϫ 512 focal plane arrays (FPAs). In order to meet the performance requirements needed for these FPAs, cutoff and doping uniformity across the 100-mm wafer are crucial. Reflection high-energy electron diffraction (RHEED), secondary ion mass spectrometry (SIMS), Fourier transform infrared spectrometry (FTIR), x-ray, and etch pit density (EPD) were monitored to assess the reproducibility, uniformity, and quality of detector material grown. Material properties demonstrated include x-ray full width half maximum (FWHM) as low as 64 arc-sec, typical etch pit densities in mid-10 6 cm Ϫ2 , cutoff uniformity below 5% across the full wafer, and typical density of macrodefects Ͻ 1000 cm Ϫ2 . The detector quality was established by using test structure arrays (TSAs), which include miniarray diodes with the similar pitch as the detector array for easy measurement of critical parameters such as diode I-V characteristics and detector quantum efficiency. Typical I-V curves show excellent R o A products and strong reverse breakdown characteristics. Detector quantum efficiency was measured to be in the 60-70% range without an antireflection coating.

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Wide-FOV FPAs for a shipboard distributed aperture system

Cited by 10 publications

References 0 publications

Large format MBE HgCdTe on silicon detector development for astronomy

Large format MBE HgCdTe on silicon detector development for astronomy

Hg based II–VI compounds on non‐standard substrates

Control and growth of middle wave infrared (MWIR) Hg(1−x)CdxTe on Si by molecular beam epitaxy

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