Wide gap Cd1−xMgxTe: molecular beam epitaxial growth and characterization

Waag, A.; Fischer, F.; Litz, Th.; Kuhn-Heinrich, B.; Zehnder, U.; Ossau, W.; Spahn, W.; Heinke, H.; Landwehr, G.

doi:10.1016/0022-0248(94)90798-6

Cited by 43 publications

(17 citation statements)

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“…9) and using a CdS/CdTe heterojunction with an interface recombination velocity in the range of 10 3 cm/s-10 6 cm/s. 10,11 It has been reported that MgCdTe and CdTe form a type-I band edge alignment, 12 suggesting that MgCdTe is good for electron and hole confinement and is expected to reduce the surface recombination rate of CdTe. Recently, we reported the growth, structural, and optical properties of CdTe/MgCdTe double heterostructures (DHs) grown on InSb (001) substrates by Molecular Beam Epitaxy (MBE).…”

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confidence: 99%

Determination of CdTe bulk carrier lifetime and interface recombination velocity of CdTe/MgCdTe double heterostructures grown by molecular beam epitaxy

Zhao

DiNezza

Shi

et al. 2014

Applied Physics Letters

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Determination of CdTe bulk carrier lifetime and interface recombination velocity of CdTe/MgCdTe double heterostructures grown by molecular beam epitaxy

Zhao

DiNezza

Shi

et al. 2014

Applied Physics Letters

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“…Details of the substrate preparation and sample growth process can be found elsewhere [9]. The absolute magnesium concentration was determined via the lattice constant derived from X-ray diffraction [4]. We examined the halogens Cl, Br and I as dopants, integrated into the MBE process in the form of zinc-halogenides.…”

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confidence: 99%

“…The lattice mismatch between CdTe and zinc blende MgTe has been found to be as low as 1% at room temperature. Considering the MgTe band gap of about 3.3 eV at 2 K [4,5], (CdMg)Te is an ideal counterpart to the semimagnetic (CdMn)Te. Optical investigations on CdTe/(CdMg)Te and (CdMn)Te/(CdMg)Te structures reveal interesting properties of those structures [6,7].…”

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Doping of the Wide-Gap Semiconductor Cd_1-xMg_xTe During Molecular Beam Epitaxy

et al. 1995

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We investigated the n-type doping of the wide-gap II-VI semiconductor (CdMg)Te. The n-type doping of (CdMg)Te has previously been achieved in only a small range of magnesium concentration. By the use of zinc iodine as dopant source material, we obtained highly doped (CdMg)Te layers up to a magnesium concentration of 40%. The limiting factor for the free carrier concentration at room temperature is the occurrence of a deep level, which dominates the electrical properties at room temperature of layers with more than 30% magnesium. Compensating defects or defect complexes are considered, to explain the observed properties of the deep level, which do not seem to be characteristic of an isolated donor state.

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“…It has been shown that CdMgTe heterostructures can be grown by molecular beam epitaxy (MBE) with a high quality [8]. Varying the Mg concentration, the energy gap can be tuned from 1.5 eV (CdTe) to 3.5 eV (zinc blende MgTe) [9]. The valence band offset CdTe/MgTe was determined to be 0.7 eV [10,11].…”

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Development of CdTe/Cd_1-xMg_xTe Double Barrier, Single Quantum Well Heterostructures for Resonant Tunneling

et al. 1995

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We report the first observation of resonant tunneling through a CdTe/Cd1-x Mgx Te double barrier, single quantum well heterostructure. Negative differential resistance is observable at temperatures below 230 K, exhibiting a peak to valley ratio of 3:1 at 4.2 K.PACS numbers: 73.20. Dx, 73.61.Ga Since the first observation of resonant tunneling in GaAs/AlGaAs double barrier stuctures [1], the work in this particular field has been almost exclusively confined to III-V material systems [2][3][4][5]. Resonant tunneling devices are interesting for high frequency applications. Moreover, they are of considerable interest in basic research [6]. Double barrier stuctures can be used e.g. for the investigation of interface roughness or band discontinuities.In II-VI semiconductors, resonant tunneling through double barrier structures had been reported only in the HgTe/CdTe system [7]. It has been shown that CdMgTe heterostructures can be grown by molecular beam epitaxy (MBE) with a high quality [8]. Varying the Mg concentration, the energy gap can be tuned from 1.5 eV (CdTe) to 3.5 eV (zinc blende MgTe) [9]. The valence band offset CdTe/MgTe was determined to be 0.7 eV [10,11]. Therefore a very high electron confinement of 1.3 eV can be obtained. Recently quantum Hall effect in modulation doped CdTe/CdMgTe single quantum wells has been observed [12], demonstrating that high mobility twodimensional systems can be fabricated. In optical studies the non-magnetic CdMgTe turned out to be the ideal counterpart for the semimagnetic CdMnTe due to its very similar crystalline and electronic properties [13,14]. Thus the quateuary system CdMgMnTe provides the unique possibility to alter separately the electronic and magnetic properties in a heterostructure. In addition, this material system is suitable for the fabrication of quantum wires and dots [15]. Photoluminescence intensity from low-dimensional, deep etched stuctures turned (885)

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Wide gap Cd1−xMgxTe: molecular beam epitaxial growth and characterization

Cited by 43 publications

References 17 publications

Determination of CdTe bulk carrier lifetime and interface recombination velocity of CdTe/MgCdTe double heterostructures grown by molecular beam epitaxy

Determination of CdTe bulk carrier lifetime and interface recombination velocity of CdTe/MgCdTe double heterostructures grown by molecular beam epitaxy

Doping of the Wide-Gap Semiconductor Cd_1-xMg_xTe During Molecular Beam Epitaxy

Development of CdTe/Cd_1-xMg_xTe Double Barrier, Single Quantum Well Heterostructures for Resonant Tunneling

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Wide gap Cd1−xMgxTe: molecular beam epitaxial growth and characterization

Cited by 43 publications

References 17 publications

Determination of CdTe bulk carrier lifetime and interface recombination velocity of CdTe/MgCdTe double heterostructures grown by molecular beam epitaxy

Determination of CdTe bulk carrier lifetime and interface recombination velocity of CdTe/MgCdTe double heterostructures grown by molecular beam epitaxy

Doping of the Wide-Gap Semiconductor Cd1-xMgxTe During Molecular Beam Epitaxy

Development of CdTe/Cd1-xMgxTe Double Barrier, Single Quantum Well Heterostructures for Resonant Tunneling

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Doping of the Wide-Gap Semiconductor Cd_1-xMg_xTe During Molecular Beam Epitaxy

Development of CdTe/Cd_1-xMg_xTe Double Barrier, Single Quantum Well Heterostructures for Resonant Tunneling