Wideband AlGaN/GaN HEMT low noise.amplifier for highly survivable receiver electronics

Cha, Seon-Yong; Chung, Y.; Wojtowwicz, M.; Smorchkova, I.; Allen, B.; Yang, J.M.; Kagiwada, R.S.

doi:10.1109/mwsym.2004.1339093

Cited by 37 publications

(8 citation statements)

References 3 publications

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“…In order to get high output power, Wilkinson power combiner is used to combine power amplifiers [8]. The Wilkinson power combiner is simulated by schematic and layout design in ADS and the frequency characteristic is shown in Fig.6.…”

Section: Amplifier Chainmentioning

confidence: 99%

Design of a power amplifier based on GaN HEMTs at Ka-band

Yue

Guo²,

Luo

et al. 2013

2013 IEEE INTERNATIONAL CONFERENCE ON MICROWAVE TECHNOLOGY &Amp; COMPUTATIONAL ELECTROMAGNETICS

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A GaN power amplifier which can be applied to Ka-band is simulated and studied in the paper. Based on typical AlGaN/GaN HEMT (high electron mobility transistor) pattern, the transistor model is set up by the Silvaco TCAD. The on-chip spiral inductor and metal-insulator-metal (MIM) capacitance are also simulated in HFSS respectively. Extracted from the modal above, s-parameters are used to design a power amplifier circuit. The final result shows that the output power can reach 21.4dBm and PAE is 18% with 25V bias voltage and 9mA static output current at 35GHz when the input power is 10dBm.

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Section: Amplifier Chainmentioning

confidence: 99%

Design of a power amplifier based on GaN HEMTs at Ka-band

Yue

Guo²,

Luo

et al. 2013

2013 IEEE INTERNATIONAL CONFERENCE ON MICROWAVE TECHNOLOGY &Amp; COMPUTATIONAL ELECTROMAGNETICS

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show abstract

“…In the literature, improvements in input intercept point (IIP3) from today's 20 dBm to 43 dBm have been reported by, for example, Northrop Grumman [1]. This massive improvement in linearity allows one to reduce the requirements for the duplex filter, leading to further space and cost savings.…”

Section: Scalable Radio Frequency Architectures For Long Term Evolutionmentioning

confidence: 99%

Next-generation base station radio frequency architecture

Fischer¹

2007

Bell Labs Tech. J.

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Base station costs are dominated by the cost of radio frequency (RF) macrocell will therefore no longer be the dominant type of infrastructure equipment. As a result, costeffective scalability in terms of output power and traffic capacity therefore becomes an absolute necessity.New trends in spectrum regulation are appearing, such as the allocation of analog television (TV) spectrum for mobile communication, and dynamic spectrum usage techniques through cognitive radio approaches. These trends mandate a higher level of flexibility from infrastructure equipment in terms of frequency agility and will require spanning wide frequency ranges from 450 MHz to 5400 MHz. IntroductionThe base station type most often used in wireless communication networks is the classical macrocell shown in Figure 1. However, there is increasing interest in alternative architectural approaches for different deployment scenarios. Microcells are used to fill coverage gaps. Radio frequency (RF) heads connected to base station hotels via fiber allow for collocating multiple base stations. Furthermore, home base stations are gaining more attention from service providers that want to move subscribers from fixed line to wireless equipment. Femtocells are being considered for providing service in planes or on ships. In the future, the classical by shrinking the size of filters, power amplifiers, and cooling will also turn into OPEX savings as less real estate is required. State-of-the-Art Base Station TechnologyWhat technological advances are necessary to reduce costs, form factor, weight, and energy consumption of infrastructure equipment?The base station in Figure 1 indicates that a quarter of the form factor is dominated by the duplex filters. These split the antenna signal into the receive and transmit paths. Furthermore, an additional half of the form factor is occupied by power amplifiers and cooling equipment. Radio and baseband cards occupy only a minor fraction of the base station's volume. Over the years, the breakdown of the form factor described has remained substantially the same. This is because baseband and low-power RF processing follows Moore's law, but high-power RF does not. Duplex filters need to provide high selectivity. Therefore, high quality (Q) factors, which require large energy storage and hence a large form factor, are needed. Furthermore, resonator dimensions are tied to the wavelength. As a result, today's filter approach will not lead automatically to smaller dimensions over time. A new filter concept is necessary. Figure 2 provides a detailed schematic of the power budget of a base station. The power amplifiers (PAs) dominate the power consumption. The effective usable power amplifier efficiency, including all predriver stages, RF cabling, and filtering, is only 4 percent (20 W͞490 W). Nearly half of the power (6 kW) drawn from the mains line is dissipated by the PAs (2.8 kW). The overall efficiency when relating RF power to mains power is only 1.9 percent (6 * 20 W͞6184 W). A significant improvement in efficienc...

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“…The tx capabilities are improved either by realizing power amplifiers with much higher power densities [1] or by keeping the same output power as that of current modules with a dramatic decrease of chip area. On the other hand the rx capabilities are improved by the potential elimination of limiting circuits along the path without degradation of the system noise [2]- [4]. Besides, the high power handling capability, the low conduction resistance and the high electron mobility of GaN transistors, make them very suitable for low loss and fast commutation power switches, which allow swapping the ferrite isolators/circulators with high-power GaN switches [5].…”

Section: Introductionmentioning

confidence: 99%

A GaN MMIC chipset suitable for integration in future X-band spaceborne radar T/R module Frontends

D'Angelo¹,

Biondi²,

Scappaviva³

et al. 2016

2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON)

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A set of monolithic microwave integrated circuits (MMICs) has been successfully developed by using a qualified European GaN HEMT technology. In particular a high power amplifier (HPA), a low noise amplifier (LNA) and a single pole double throw (SPDT) switch have been designed, manufactured and tested. The presented chipset is very suitable for integration in future GaN-based T/R module Frontend for spaceborne Xband SAR applications. In particular, the MMIC HPA integrates two stages of gain in 5.5 x 4.0 mm2 of area. Its measured performance is an output power of 27 W, a PAE of 36% with a linear gain greater than 24 dB from 8.8 GHz to 10.2 GHz. The MMIC LNA integrates three stages of gain in 3.0 x 2.02 mm2 of area. Its measured performance is a small signal gain greater than 23 dB with an associated noise figure of 1.6 dB in the frequency range from 7.4 to 11.4 GHz. Besides, its output power at 1 dB of gain compression is greater than 22 dBm. The MMIC SPDT switch exploits a robust asymmetrical absorptive/reflective topology in 3.0 x 1.0 mm2 of area. The chosen topology allows obtaining different functionalities of each switched branch. In the frequency range from 8.4 GHz to 10.8 GHz its measured performance is an insertion loss lower than 1 dB for both tx and rx path, and tx-mode rx-mode isolations better than 20 dB and 28 dB respectively. Besides, the tx path 1 dB insertion loss compression occurs at nearly 20 W of input power.Index Terms-GaN; low noise amplifier; power amplifier; SPDT switch; X band; T/R module

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Wideband AlGaN/GaN HEMT low noise.amplifier for highly survivable receiver electronics

Cited by 37 publications

References 3 publications

Design of a power amplifier based on GaN HEMTs at Ka-band

Design of a power amplifier based on GaN HEMTs at Ka-band

Next-generation base station radio frequency architecture

A GaN MMIC chipset suitable for integration in future X-band spaceborne radar T/R module Frontends

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