Wideband PA and LAN for 60-GHz Radio in 90-nm LP CMOS Technology

Lin, Jing-Fung; To, Kun-Hin; Brown, B.S.; Hammock, D.; Majerus, Michael; Tutt, M.; Huang, Weicheng

doi:10.1109/csics.2008.32

Cited by 7 publications

(9 citation statements)

References 14 publications

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“…The peak value is about 17.3, 12.4, 7.6 and 4.9 dB for , 27, 85 and 125 , respectively. The gain variation value over temperature is consistent with the previous data [8] and other researches [5]. The gain degradation at high temperature is mainly associated with lower , due to CMOS transistor reducing and increasing significantly at high temperature.…”

Section: Measurement Results and Discussionsupporting

confidence: 91%

“…Despite the small signal gain drops more than 10 dB over temperature, the only varies 3.2 dB from to 125 . This is consistent with [5], [8].…”

Section: Measurement Results and Discussionsupporting

confidence: 88%

“…The peak value is about 16.1, 11.3, 7.6 and 5.2 dB for , 27, 85 and 125 , respectively. The peak gain variation over temperature is also consistent with the single-ended PA and [5], [8]. The Fig.…”

Section: Measurement Results and Discussionsupporting

confidence: 83%

“…The backend process used has six layers of Cu with a 0.85-thick last metal. The attenuation for a microstrip line with characteristic impedance of 50 is 1.0 dB/mm at 60 GHz and 1.2 dB/mm at 80 GHz [8].…”

Section: Introductionmentioning

confidence: 99%

“…In this letter, Freescale 90-nm LP CMOS with of 100 GHz/130 GHz is used to fabricate the circuits [8]. The backend process used has six layers of Cu with a 0.85-thick last metal.…”

Section: Introductionmentioning

confidence: 99%

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Power Amplifier for 77-GHz Automotive Radar in 90-nm LP CMOS Technology

Lin

Hammock

et al. 2010

IEEE Microw. Wireless Compon. Lett.

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This letter reports power amplifiers for 77-GHz automotive radar applications in a 90-nm LP (low power) 1P6M CMOS technology. The three-stage single-ended PA has a 12.4 dB gain and a +9 1-dBm saturated output power and the two-stage differential PA has a 11.3 dB gain and a +11 4-dBm output power at in = 1 9 dBm. This is the first letter to report CMOS PA characteristics over full automotive temperature range ( 40 C to 125 C) at 77 GHz range.

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Section: Measurement Results and Discussionsupporting

confidence: 91%

“…Despite the small signal gain drops more than 10 dB over temperature, the only varies 3.2 dB from to 125 . This is consistent with [5], [8].…”

Section: Measurement Results and Discussionsupporting

confidence: 88%

Section: Measurement Results and Discussionsupporting

confidence: 83%

Section: Introductionmentioning

confidence: 99%

“…In this letter, Freescale 90-nm LP CMOS with of 100 GHz/130 GHz is used to fabricate the circuits [8]. The backend process used has six layers of Cu with a 0.85-thick last metal.…”

Section: Introductionmentioning

confidence: 99%

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Power Amplifier for 77-GHz Automotive Radar in 90-nm LP CMOS Technology

Lin

Hammock

et al. 2010

IEEE Microw. Wireless Compon. Lett.

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Low‐noise amplifier by using a signal‐reuse wake‐up technology

Hsieh

2018

IET Microwaves, Antennas & Propagation

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A V‐band low‐power signal‐reuse low‐noise amplifier (SRLNA) implemented in 90 nm complementary metal–oxide–semiconductor technology is presented. The proposed SRLNA uses zero‐VT and signal‐reuse wake‐up technologies to improve wake‐up sensitivity and reduce power consumption. The SRLNA can be activated or turned off automatically based on the amplitude of the radio‐frequency signal power. Time delays of the zero‐VT envelope detector and limiting amplifier are analysed in order to loose the constraint on the maximum data‐rate. Moreover, the relationship between noise figure (NF), power gain (S21), input and output return losses (S11 and S22) of the SRLNA are discussed in detail, with the quality factors Qnf, QI, Qin, and QL defined for NF, S21, S11, and S22 parameters derivations. The proposed SRLNA consumes 25 and 12 mW at activate and sleep modes, respectively. The sensitivity of the proposed SRLNA can achieve about −50 dBm.

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