Widely tunable alloy composition and crystal structure in catalyst-free InGaAs nanowire arrays grown by selective area molecular beam epitaxy

Treu, Julian; Speckbacher, Maximilian; Saller, Kai; Morkötter, Stefanie; Döblinger, Markus; Xu, Xiaomo; Riedl, Hubert; Abstreiter, G.; Finley, Jonathan J.; Koblmüller, Gregor

doi:10.1063/1.4941407

Cited by 31 publications

(46 citation statements)

References 32 publications

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“…To the best of our knowledge, there are no reports of monolithic nanowire lasers on silicon operating in the telecom-wavelength range. This may be attributed to difficulties in growing high-quality nanowires with proper bandgaps on silicon 11 , as well as non-radiative Auger recombination which increases as the bandgap is decreased 5,12 . Furthermore, the confinement factor and end-facet reflectivity decrease at longer wavelengths in sub-wavelength scale nanowire cavities, implying that the nanowire diameter and length must increase to support longer wavelength lasing 13 .…”

Section: Introductionmentioning

confidence: 99%

Telecom-Wavelength Bottom-up Nanobeam Lasers on Silicon-on-Insulator

et al. 2017

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Semiconductor nanowire lasers are considered promising ultracompact and energy-efficient light sources in the field of nanophotonics. Although the integration of nanowire lasers onto silicon photonic platforms is an innovative path toward chip-scale optical communications and photonic integrated circuits, operating nanowire lasers at telecom-wavelengths remains challenging. Here, we report on InGaAs nanowire array lasers on a silicon-on-insulator platform operating up to 1440 nm at room temperature. Bottom-up photonic crystal nanobeam cavities are formed by growing nanowires as ordered arrays using selective-area epitaxy, and single-mode lasing by optical pumping is demonstrated. We also show that arrays of nanobeam lasers with individually tunable wavelengths can be integrated on a single chip by the simple adjustment of the lithographically defined growth pattern. These results exemplify a practical approach toward nanowire lasers for silicon photonics.

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Section: Introductionmentioning

confidence: 99%

Telecom-Wavelength Bottom-up Nanobeam Lasers on Silicon-on-Insulator

et al. 2017

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“…[31] Optically pumped laser device based on InGaAs NWs has also been reported, [109] while embedding InGaAs QDs in GaAs NWs has been proven beneficial for near-infrared operating lasers. [110] The growth of InGaAs NWs has been achieved via MOCVD, [31,43,50,[111][112][113][114] CVD [32] and MBE, [20,109,[115][116] either via a catalyst free-approach or by using Au, Ga or In droplets as catalysts. The effect of different parameters on the morphology of the NWs has been examined intensely.…”

Section: 22) Ingaas Nanowiresmentioning

confidence: 99%

“…It has been shown that in order to obtain In-rich, InGaAs NWs the ideal temperature would be 550°C, while the temperature for Ga-rich NWs is 610°C. [115] This is probably attributed to the lower mobility of Ga adatoms, which requires for a higher temperature in order for Ga incorporation in the NWs to be promoted. The above are illustrated in the SEM images of Figs.…”

Section: 22) Ingaas Nanowiresmentioning

confidence: 99%

III–V ternary nanowires on Si substrates: growth, characterization and device applications

Boras

Liu

2019

J. Semicond.

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Over the past decades, the progress in the growth of materials which can be applied to cutting-edge technologies in the field of electronics, optoelectronics and energy harvesting has been remarkable. Among the various materials, group III-V semiconductors are of particular interest and have been widely investigated due to their excellent optical properties and high carrier mobility. However, the integration of III-V structures as light sources and numerous other optical components on Si, which is the foundation for most optoelectronic and electronic integrated circuits, has been hindered by the large lattice mismatch between these compounds. This mismatch results in substantial amounts of strain and degradation of the performance of the devices. Nanowires (NWs) are unique nanostructures that induce elastic strain relaxation, allowing for the monolithic integration of III-V semiconductors on the cheap and mature Si platform. A technique that ensures flexibility and freedom in the design of NW structures is the growth of ternary III-V NWs, which offer a tuneable frame of optical characteristics, merely by adjusting their nominal composition. In this review, we will focus on the recent progress in the growth of ternary III-V NWs on Si substrates. After analysing the growth mechanisms that are being employed and describing the effect of strain in the NW growth, we will thoroughly inspect the available literature and present the growth methods, characterization and optical measurements of each of the III-V ternary alloys that have been demonstrated. The different properties and special treatments required for each of these material platforms are also discussed. Moreover, we will present the results from the works on device fabrication, including lasers, solar cells, water splitting devices, photodetectors and FETs, where ternary III-V NWs were used as building blocks. Through the current paper, we exhibit the up-to-date state in this field of research and summarize the important accomplishments of the past few years.

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“…The analysis focuses on InGaAs nanowires grown by catalyst-free molecular beam eptiaxy (MBE) which have been shown to have wide compositional tunability and can be used as a foundation for epitaxial core-shell heterostructures 22,23 for near-IR optoelectronics. We demonstrate reconstruction of single stacking defects and lattice strain in InGaAs nanowires on Si substrates with a spatial resolution better than nm.…”

mentioning

confidence: 99%

Measuring Three-Dimensional Strain and Structural Defects in a Single InGaAs Nanowire Using Coherent X-ray Multiangle Bragg Projection Ptychography

et al. 2018

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III-As nanowires are candidates for near-infrared light emitters and detectors that can be directly integrated onto silicon. However, nanoscale to microscale variations in structure, composition, and strain within a given nanowire, as well as variations between nanowires, pose challenges to correlating microstructure with device performance. In this work, we utilize coherent nanofocused X-rays to characterize stacking defects and strain in a single InGaAs nanowire supported on Si. By reconstructing diffraction patterns from the 21̅1̅0 Bragg peak, we show that the lattice orientation varies along the length of the wire, while the strain field along the cross-section is largely unaffected, leaving the band structure unperturbed. Diffraction patterns from the 011̅0 Bragg peak are reproducibly reconstructed to create three-dimensional images of stacking defects and associated lattice strains, revealing sharp planar boundaries between different crystal phases of wurtzite (WZ) structure that contribute to charge carrier scattering. Phase retrieval is made possible by developing multiangle Bragg projection ptychography (maBPP) to accommodate coherent nanodiffraction patterns measured at arbitrary overlapping positions at multiple angles about a Bragg peak, eliminating the need for scan registration at different angles. The penetrating nature of X-ray radiation, together with the relaxed constraints of maBPP, will enable the in operando imaging of nanowire devices.

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Widely tunable alloy composition and crystal structure in catalyst-free InGaAs nanowire arrays grown by selective area molecular beam epitaxy

Cited by 31 publications

References 32 publications

Telecom-Wavelength Bottom-up Nanobeam Lasers on Silicon-on-Insulator

Telecom-Wavelength Bottom-up Nanobeam Lasers on Silicon-on-Insulator

III–V ternary nanowires on Si substrates: growth, characterization and device applications

Measuring Three-Dimensional Strain and Structural Defects in a Single InGaAs Nanowire Using Coherent X-ray Multiangle Bragg Projection Ptychography

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