1997
DOI: 10.1126/science.276.5314.895
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Will UV Lasers Beat the Blues?

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Cited by 508 publications
(212 citation statements)
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“…15 In addition, the shoulder at 3.375 eV, indicated by the dashed arrow in the figure, is probably attributed to a transition from a free exciton (EX) since a similar peak was also observed in singly crystalline ZnO. [2][3][4]15 However, quantum confinement effects in the ZnO nanoparticle array were not observed, presumably because of the relatively large diameter of the nanoparticle. [5][6][7] In conclusion, we successfully demonstrated the synthesis of photoluminescent ZnO nanoparticles in an ordered array on the solid substrate conserving the dimensional order of PS-PVP diblock copolymer micelles.…”
mentioning
confidence: 99%
“…15 In addition, the shoulder at 3.375 eV, indicated by the dashed arrow in the figure, is probably attributed to a transition from a free exciton (EX) since a similar peak was also observed in singly crystalline ZnO. [2][3][4]15 However, quantum confinement effects in the ZnO nanoparticle array were not observed, presumably because of the relatively large diameter of the nanoparticle. [5][6][7] In conclusion, we successfully demonstrated the synthesis of photoluminescent ZnO nanoparticles in an ordered array on the solid substrate conserving the dimensional order of PS-PVP diblock copolymer micelles.…”
mentioning
confidence: 99%
“…Among the various known semiconductors, ZnO has several advantages compared to other wide-band-gap semiconductors. It has a direct band gap of 3.37 eV and large exciton binding energy of 60 meV at room temperature [1]. Due to these unique properties, it finds applications in antireflection coatings, transparent electrodes in solar cells, ultraviolet (UV) light emitters, diode lasers, varistors, piezoelectric devices, spin-electronics, surface acoustic wave propagation, and also in sensing of gas [2].…”
Section: Introductionmentioning
confidence: 99%
“…Recently, ZnO has attracted much interest as a promising material for blue and ultraviolet (UV) light emitting diodes (LEDs) and laser diodes (LDs), since it has a wide direct band gap of 3.37 eV and a large exciton binding energy of 60 meV at room temperature [1,2]. It is well known that undoped ZnO exhibits mostly n-type conduction, whereas growth of high-conductivity p-type ZnO is very difficult because of the problems such as deep acceptor level, low solubility of the acceptor dopants and a strong selfcompensating effect induced by the presence of native defects such as zinc interstitials (Zn i ), oxygen vacancies (V O ) and hydrogen impurities [3][4][5].…”
Section: Introductionmentioning
confidence: 99%