Windowed growth of AlGaN/GaN heterostructures on Silicon 〈111〉 substrates for future MOS integration

Chyurlia, P.; Sèmond, F.; Lester, T.; Bardwell, J. A.; Rolfe, S.; Cordier, Y.; Baron, N.; Moreno, J. C.; Tarr, N. G.

doi:10.1002/pssa.200824452

Cited by 7 publications

(5 citation statements)

References 13 publications

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“…A promising way to reduce the cost of such technologies consists of monolithically integrating GaN devices along with silicon MOS technology. Different techniques were recently investigated for this purpose: GaN epitaxy transfer and GaN selective area growth (SAG) . In the case of SAG technique, it is possible to either manufacture the CMOS prior to the fabrication of HEMT devices (CMOS‐first approach) or reverse the order of integration (HEMT‐first approach).…”

Section: Introductionmentioning

confidence: 99%

Reduction of the thermal budget of AlGaN/GaN heterostructures grown on silicon: A step towards monolithic integration of GaN‐HEMTs with CMOS

Comyn

Cordier²,

Aimez

et al. 2015

Physica Status Solidi (a)

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Phone: þ33 493 954 200, Fax: þ33 493 958 361In this paper, we investigate the reduction of thermal budgets associated with the growth of GaN high electron mobility transistor (HEMT) heterostructures. The reduction of such thermal budgets is desirable for the monolithic integration of GaN-HEMT with CMOS circuits, when the latter are fabricated first. Indeed, due to the elevated temperatures required for the growth of III-nitrides, the characteristics of the integrated CMOS devices may drift during the process. In order to determine in which extend the growth thermal budget could be reduced without penalty on the performances of GaN-HEMTs, different structures were grown by ammonia-molecular beam epitaxy (ammonia-MBE) with standard and reduced growth temperatures. The epitaxial structures were then compared with regards to their structural and electrical properties. The present work sets the limit for a potential trade-off between Si-CMOS and GaN-HEMTs degradation in a CMOS-first monolithic integration scenario.

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Section: Introductionmentioning

confidence: 99%

Reduction of the thermal budget of AlGaN/GaN heterostructures grown on silicon: A step towards monolithic integration of GaN‐HEMTs with CMOS

Comyn

Cordier²,

Aimez

et al. 2015

Physica Status Solidi (a)

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“…AlGaN/GaN layers were grown by ammonia-MBE on 50 mm diameter 10kVcm silicon k111l substrates using the windowed growth technique described in detail in [6]. It should be possible to scale the growth technique to the much larger silicon wafer diameters used in commercial CMOS [7].…”

mentioning

confidence: 99%

Monolithic integration of AlGaN/GaN HFET with MOS on silicon 〈111〉 substrates

Chyurlia

Sèmond²,

Lester

et al. 2010

Electron. Lett.

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Monolithic integration of AlGaN/GaNHFET with MOS on silicon<111>substrates Chyurlia, P. N.; Semond, F.; Lester, T.; Bardwell, J. A.; Rolfe, S.; Tang, H.; Tarr, N. G. Contact us / Contactez nous: nparc.cisti@nrc-cnrc.gc.ca. http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=fr L'accès à ce site Web et l'utilisation de son contenu sont assujettis aux conditions présentées dans le site Web page / page Web http://dx.

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“…Also, these results confirm that lowering AlN growth temperature effectively limits the contamination by donor impurities in the buffer layers. In , AlGaN/GaN heterostructures have been grown by ammonia‐MBE in silicon windows using a PECVD 1.8‐μm SiO 2 mask. The AlN and GaN growth temperatures were 920 and 800 °C, respectively.…”

Section: Preliminary Electrical Measurementsmentioning

confidence: 99%

Development of technological building blocks for the monolithic integration of ammonia-MBE-grown GaN-HEMTs with silicon CMOS

Comyn

Cordier²,

Chenot³

et al. 2016

Phys. Status Solidi A

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In this paper, we investigate a technological route for the monolithic integration of GaN high-electron-mobility transistors (HEMTs) on silicon complementary metal oxide semiconductor (CMOS) circuits. The CMOS-first approach developed in this work relies on the ammonia-source molecular beam epitaxy (ammonia-MBE) technique which operates at noticeably lower temperatures than the metalorganic chemical vapor deposition (MOCVD) technique. The presence of CMOS devices on the wafer is a challenge that has been addressed by reducing the maximum growth temperature of (Al,Ga)N materials from 920 to 830-850 8C without any degradation of the GaN crystal quality nor the HEMT device behavior. In addition, we developed a dielectric stack able to withstand the large stress arising from the growth process and to mitigate the related cracking and delamination issues. Capacitance-voltage measurements have shown that the HEMT epitaxial structures provide a capacitance plateau with a sharp pinch-off behavior, attesting the absence of any significant interface traps nor residual donor contamination due to the presence of a dielectric mask on the silicon substrate. Preliminary results show that thin buffer HEMT devices with normal electrical behaviors can be locally grown at low temperature. 1 Introduction The race for higher performances in silicon electronics, hence, not only relies on smaller devices (More Moore) but also on the integration of new materials and functions (More than Moore). For instance, the integration of gallium nitride (GaN) devices in silicon complementary metal oxide semiconductor (CMOS) circuits allows the fabrication of high performance mixed signal and RF circuits [1]. In addition, the development of 600 V GaN normally-off power switches has been made possible by combining a GaN depletion-mode transistor with an enhancement-mode Si MOSFET in a cascode circuit [2]. So far, this technology relies on a system-inpackage (SiP) approach also referred as hybrid integration approach. However, the performance, reliability, and costeffectiveness of GaN on CMOS circuits could be greatly

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Windowed growth of AlGaN/GaN heterostructures on Silicon 〈111〉 substrates for future MOS integration

Cited by 7 publications

References 13 publications

Reduction of the thermal budget of AlGaN/GaN heterostructures grown on silicon: A step towards monolithic integration of GaN‐HEMTs with CMOS

Reduction of the thermal budget of AlGaN/GaN heterostructures grown on silicon: A step towards monolithic integration of GaN‐HEMTs with CMOS

Monolithic integration of AlGaN/GaN HFET with MOS on silicon 〈111〉 substrates

Development of technological building blocks for the monolithic integration of ammonia-MBE-grown GaN-HEMTs with silicon CMOS

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