2002
DOI: 10.1109/tcapt.2002.808008
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Wire bonding to advanced copper, low-K integrated circuits, the metal/dielectric stacks, and materials considerations

Abstract: There are three areas to consider when designing/implementing wire bonding to advanced ULSI damascene-copper chips having copper metallization and low dielectric-constant polymers embedded beneath them (Cu/LoK). These are: 1) the copper-pad top-surface oxidation inhibitor coatingmetal/organic/inorganic. (Current work involves evaluating the metal and inorganic options); 2) the low dielectric constant materials available; 3) under-pad metal/polymer stacks and support structures necessary for bondability and rel… Show more

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Cited by 62 publications
(17 citation statements)
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“…As mentioned before, in the CMOS090 process, copper replaces aluminium and bonding to copper is not an easy thing [15]. In order to fully solve the problems of wire bonding to IC's with copper bondpads, it is necessary to protect the top surface of the Copper from oxidation and sulphating.…”
Section: Wire Bondmentioning
confidence: 99%
“…As mentioned before, in the CMOS090 process, copper replaces aluminium and bonding to copper is not an easy thing [15]. In order to fully solve the problems of wire bonding to IC's with copper bondpads, it is necessary to protect the top surface of the Copper from oxidation and sulphating.…”
Section: Wire Bondmentioning
confidence: 99%
“…Several methods have been emerged to protect the Cu pad, such as the inert gas shielding, the plasma cleaning and the top surface protective coatings, which is applied most widely. A review on the various form of coating to enhance the bondability of copper pad surface by Harman and Johnson indicated three types of surface coatings, namely metallic top surface, inorganic film and organic layer [5].…”
Section: Introductionmentioning
confidence: 99%
“…4 Harman et al 5 used thin inorganic films such as SiN, SiO 2 , and Al 2 O 3 deposited over the Cu surface to successfully prevent oxidation. However, due to the brittle and hard nature of those inorganic films, cracking in the chip might not be reduced, and bond quality is reduced due to the amount of nonmetallic material at the interface.…”
Section: Introductionmentioning
confidence: 99%