WITHDRAWN: Sub-20 nm multilayer nanopillar patterning for hybrid SET/CMOS integration

This contribution explores different strategies to electrically contact vertical pillars with diameters less than 100 nm. Two process strategies have been defined, the first based on Atomic Force Microscope (AFM) indentation and the second based on planarization and reactive ion etching (RIE). We have demonstrated that both proposals provide suitable contacts. The results help to conclude that the most feasible strategy to be implementable is the one using planarization and reactive ion etching since it is more suitable for parallel and/or high-volume manufacturing processing.

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Exploring Strategies to Contact 3D Nano-Pillars

Amat

Moral

Fernández-Regúlez

et al. 2020

Nanomaterials

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WITHDRAWN: Sub-20 nm multilayer nanopillar patterning for hybrid SET/CMOS integration

Cited by 1 publication

References 11 publications

Exploring Strategies to Contact 3D Nano-Pillars

Exploring Strategies to Contact 3D Nano-Pillars

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WITHDRAWN: Sub-20 nm multilayer nanopillar patterning for hybrid SET/CMOS integration

Cited by 1 publication

References 11 publications

Exploring Strategies to Contact 3D Nano-Pillars

Exploring Strategies to Contact 3D Nano-Pillars

Contact Info

Product

Resources

About

WITHDRAWN: Sub-20 nm multilayer nanopillar patterning for hybrid SET/CMOS integration