2003
DOI: 10.1016/s0169-4332(02)00706-7
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Work function change caused by alkali ion sputtering

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Cited by 17 publications
(15 citation statements)
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“…We believe that emitting surface (first two mono atomic layers) represents a ''mixture'' of oxygen atoms, forming 70-80% for the used oxygen pressure, silicon atoms and cesium atoms, implanted due to previous bombardment. Cesium surface concentration was estimated around 12-15% for cesium ion sputtering of Si with 15 keV primary ion energy [2]. The close cesium concentration we estimated for the oxygen flooding regime.…”
Section: Resultssupporting
confidence: 74%
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“…We believe that emitting surface (first two mono atomic layers) represents a ''mixture'' of oxygen atoms, forming 70-80% for the used oxygen pressure, silicon atoms and cesium atoms, implanted due to previous bombardment. Cesium surface concentration was estimated around 12-15% for cesium ion sputtering of Si with 15 keV primary ion energy [2]. The close cesium concentration we estimated for the oxygen flooding regime.…”
Section: Resultssupporting
confidence: 74%
“…In the limits of the estimated surface composition all found experimental data can be easy explained. Indeed, additionally to Cs-Si surface dipole [2], Cs-O dipoles appear on the surface, which have higher dipole moment in comparison with Cs-Si dipoles. The electric field, formed by these dipoles, increases, and, as a consequence, the corresponding work function change increases, too.…”
Section: Resultsmentioning
confidence: 99%
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