Write-once-read-many-times resistive switching behavior of amorphous barium titanate based device with very high on-off ratio and stability

Abstract

Write once read many times (WORM) memory devices based on the resistive switching mechanism of a sputtered amorphous BaTiO3 (am-BTO) thin film in a metal–insulator–metal structure is fabricated on a FTO coated glass substrate with a silver top contact. Fabricated devices show the switching from a low-conductance state to a high-conductance state with the formation of conductive filament(s) in the am-BTO layer. The memory characteristics are investigated as a function of thickness of am-BTO layer, which is determined by varying the deposition time. Devices with all deposited thicknesses show data retention for more than 4000 s and 300 reading cycle. Devices with 180 nm thickness show a high on-off ratio on the order of 106. The fabricated WORM devices exhibit good reading-endurance and data-retention characteristics.

Effect of stoichiometry on the resistive switching characteristics of STO resistive memory

“…In addition to metal cations, oxygen vacancies, which can be modified by the annealing process, also play an important role in the RS mechanism. Amorphous BaTiO 3 (BTO) WORM memories were reported by Shringi et al 36 BTO RS layers with a thicknesses of 120-240 nm were deposited on FTO-coated glass substrates via sputtering. The active metal of Ag was used as the top electrode.…”

Coexistence of Write Once Read Many Resistive Switching with Negative Differential Resistance in Bi‐Rich Bi12FeO20 Ideal Sillenite

“…Further, resistive switching‐based devices are of two categories: 1) the first one is a write once read many (WORM), and 2) the second one is a rewritable one. [ 9 ] In WORM‐based devices, once data is stored, it cannot be erased, i.e., these can be used for storing permanent data. [ 10 ] However, the stability of WORM devices is similar to that of rewritable devices, as both exhibit considerable Joule heating effect.…”

Write-Once-Read-Many-Times Memory Characteristics with a Large Memory Window Operating at a Low Voltage by Li-Ion Incorporation from the LiCoOx Ion-Supplying Layer into the InGaZnO Channel of a Thin-Film Transistor

“…4,5 In addition, the stability and permanent data storage ability of the WORM memory devices are advantageous in terms of power efficiency since they avoid the repeatable writing operation for stable data storage. 6 Since WORM memory devices need to store the information during repeated read operations, it is strongly required to have the stability of data storage with a large memory window and a good retention of written memory states. To date, WORM memory device characteristics have been confirmed through various approaches such as charging trap sites or forming conductive filaments to store the information in carbazole-based polyimides, 7 polyimide-molybdenum disulfide quantum dots, 8 polyvinylalcohol-imidazole modified graphene nanocomposites, 9 blend of poly(3,4-ethylenedioxithiophene), polystyrene sulfonate, and polyvinyl alcohol, 10 polymer-PCBM hybrids, 11 perovskite (e.g., BaTiO 3 , 6 CsPbBr 3 12 ), aluminum oxynitride (AlO x :N), 13 nickel oxide, 14,15 Al-rich Al 2 O 3 , 16 indium-gallium-zinc oxide (IGZO), 17 ZnO, 18 ZrO 2 , 19 hybrid inorganic/organic materials, 5,20 graphene oxide, 21,22 and DNA microdisks.…”

“…Therefore, the stored information with distinguishable memory states is neither deleted nor modified during repeated read operations once it is written by programming operation. These characteristics are suitable for the applications of permanent archival storage appliances such as video images, radio frequency identification tags, and noneditable database. , In addition, the stability and permanent data storage ability of the WORM memory devices are advantageous in terms of power efficiency since they avoid the repeatable writing operation for stable data storage …”

“…Since WORM memory devices need to store the information during repeated read operations, it is strongly required to have the stability of data storage with a large memory window and a good retention of written memory states. To date, WORM memory device characteristics have been confirmed through various approaches such as charging trap sites or forming conductive filaments to store the information in carbazole-based polyimides, polyimide-molybdenum disulfide quantum dots, polyvinylalcohol-imidazole modified graphene nanocomposites, blend of poly­(3,4-ethylenedioxithiophene), polystyrene sulfonate, and polyvinyl alcohol, polymer-PCBM hybrids, perovskite (e.g., BaTiO 3 , CsPbBr 3 ), aluminum oxynitride (AlO x :N), nickel oxide, , Al-rich Al 2 O 3 , indium-gallium-zinc oxide (IGZO), ZnO, ZrO 2 , hybrid inorganic/organic materials, , graphene oxide, , and DNA microdisks . Most of the these WORM devices have two-terminal structures, which were reported to require relatively large current for programming and have an issue of integration with the selector device to prevent cross-talk problem .…”