Write once read many times (WORM) memory devices based on the resistive switching mechanism of a sputtered amorphous BaTiO3 (am-BTO) thin film in a metal–insulator–metal structure is fabricated on a FTO coated glass substrate with a silver top contact. Fabricated devices show the switching from a low-conductance state to a high-conductance state with the formation of conductive filament(s) in the am-BTO layer. The memory characteristics are investigated as a function of thickness of am-BTO layer, which is determined by varying the deposition time. Devices with all deposited thicknesses show data retention for more than 4000 s and 300 reading cycle. Devices with 180 nm thickness show a high on-off ratio on the order of 106. The fabricated WORM devices exhibit good reading-endurance and data-retention characteristics.

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Reducing the operating voltage and processing temperature are the crucial factors in the progression of organic field-effect transistors (OFETs) in flexible portable applications. Here, we have demonstrated RF sputtering deposited Ba 0.5 Sr 0.5 TiO 3 (BST) as high-k dielectric material for high performance operationally stable flexible low voltage operated OFETs. It was found that the BST deposition parameters can enormously affect the film properties like dielectric constant, surface morphology, and the crystallinity. The room-temperaturedeposited BST films were found to be amorphous in nature with low leakage current, high dielectric constant, smoother surface morphology and high electromechanical stability. The fabricated flexible OFETs with optimized BST film have shown excellent electrical performance with max. field-effect mobility (μ max ) of 1.01 cm 2 V −1 s −1 with near zero threshold voltage (V TH ) and I on /I off of ∼10 5 while operating at −5 V. The fabricated devices were found to be operationally and electromechanically stable when subjected to various electrical and mechanical stress. The investigation has demonstrated that the proposed room-temperature-deposited BST is a suitable candidate for gate dielectric in low voltage operated, long-term electromechanical stable flexible OFETs.

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