WS2 thin films: Opto-electronic characterization

Hankare, P.P.; Manikshete, A. H.; Sathe, D.J.; Chate, P.A.; Patil, A.A.; Garadkar, K. M.

doi:10.1016/j.jallcom.2009.01.024

Cited by 53 publications

(24 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The observed interplaner distance (d) for deposited samples were in good agreement with the standard'd' values taken from JCPDS Card No.73-1508 (MoS 2 ) and JCPDS-84-1398 (WS 2 ). The comparison of observed 'd' with standard indicates that chemically deposited thin film is hexagonal structure which is in accordance with the literature reported data [11,12]. The XRD analysis reveals that the obtained .…”

Section: Crystallographic and Morphological Characterizationsupporting

confidence: 89%

“…Transition metal dichalcogenides such as MoS 2 and WS 2 are some of the predominant materials used as high density batteries due to its appreciable electrical conductivity and ability to reversibly intercalate the lithium ions [4,5]. In recent years there has been a great deal of interest to study the transition metal dichalcogenides because of their possible applications as well as photoelectrode material in photoelectrochemical solar energy converters, the main advantage associated with these thin film is the prevention of electrolyte corrosion, [6][7][8][9][10][11][12]. It is used as solid lubricants in extreme conditions those include low/high temperature and pressure, high energy radiation, high vacuum and humidity [13][14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Structural and surface morphological properties of chemically deposited Mo0.5W0.5S2 thin film

Patil

Hankare

Gaikawad

et al. 2011

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

Preparation of layered type semiconductor Mo 0.5 W 0.5 S 2 -thin films has been successfully done by using chemical bath deposition method. Objective of the studies are related to structural, optical, morphological and electrical properties of the thin films. The preparation method is based on the reaction between tartarate complex of Mo and W with thiourea in an aqueous alkaline medium at 363 K. X-Ray diffraction reveals a polycrystalline film composed of both MoS 2 and WS 2 phases. The optical study shows that the band gap of the film is 1.6 eV. Electrical conductivity is high which is in the order of 10 -3 -10 -2 (9X cm) -1 .

show abstract

Section: Crystallographic and Morphological Characterizationsupporting

confidence: 89%

Section: Introductionmentioning

confidence: 99%

Structural and surface morphological properties of chemically deposited Mo0.5W0.5S2 thin film

Patil

Hankare

Gaikawad

et al. 2011

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

show abstract

“…In thin-film form, WS 2 has been grown by various techniques like sputtering [17], pulsed laser deposition (PLD) [18], chemical bath deposition (CBD) [19], electrodeposition technique [20], and many others. The growth of polycrystalline films with large grain sizes in inclined orientation at relatively low growth temperature is necessary to make efficient solar cells [21].…”

Section: Introductionmentioning

confidence: 99%

PLD Grown Polycrystalline Tungsten Disulphide (WS₂) Films

Alfihed

Hossain

Alharbi

et al. 2013

Journal of Materials

View full text Add to dashboard Cite

Polycrystalline WS 2 films were grown by pulsed laser deposition (PLD) system at relatively low temperature. The main objective of this study is to optimize the growth conditions for polycrystalline WS 2 films at relatively low temperature to use them for photovoltaics (PVs). Different growth conditions and substrates are used and examined systematically. It is found out that films grown on strontium titanate SrTiO 3 (STO) substrate have the best structural properties when compared to other substrates examined in this work. X-ray diffraction and optical characterizations of these films reveal crystallographic growth and very promising optical properties for PVs. Furthermore, it was observed that higher growth temperature (>300 ∘ C) has an unfavorable effect on the layers by creating some tungsten metallic droplets.

show abstract

“…16 This is due to their relatively small band gap (1-2 eV) and large absorption coefficient. 4 Among the TMDCs, MoX 2 and WX 2 have been attracting numerous attentions and have been extensively studied on experimental and theoretical bases. There is a huge number of theoretical works on various properties of the TMDCs layered materials reported to date in the literature.…”

Section: Introductionmentioning

confidence: 99%

3d transition metal doping-induced electronic structures and magnetism in 1T-HfSe₂ monolayers

et al. 2017

View full text Add to dashboard Cite

By performing first-principles calculations, we explore the structural, electronic and magnetic properties of 3d transition metal (TM) atom-doped 1T-HfSe 2 monolayers. The results show that it is energetically favorable and relatively easier to incorporate 3d TM atoms into the HfSe 2 under Se-rich experimental conditions. Electronic structures and magnetism can be tuned effectively for V, Cr, Mn, Fe, and Cu doping. We find that the V, Cr, Mn, Fe impurity atoms prefer to stay together in the nearest neighboring (NN) configuration and show ferromagnetism (FM) coupling. Moreover, V-doped HfSe 2 shows the characteristics of FM half-metallic properties, and it has lower formation energy. The strong p-d hybridization mechanism is used to explain the magnetism of TM-doped HfSe 2 structures. Thus, we can conclude that 3d TM doping can induce the change of electronic structures and magnetism of 1T-HfSe 2 monolayers, which is important for applications in semiconductor spintronics.

show abstract

WS2 thin films: Opto-electronic characterization

Cited by 53 publications

References 21 publications

Structural and surface morphological properties of chemically deposited Mo0.5W0.5S2 thin film

Structural and surface morphological properties of chemically deposited Mo0.5W0.5S2 thin film

PLD Grown Polycrystalline Tungsten Disulphide (WS₂) Films

3d transition metal doping-induced electronic structures and magnetism in 1T-HfSe₂ monolayers

Contact Info

Product

Resources

About

WS2 thin films: Opto-electronic characterization

Cited by 53 publications

References 21 publications

Structural and surface morphological properties of chemically deposited Mo0.5W0.5S2 thin film

Structural and surface morphological properties of chemically deposited Mo0.5W0.5S2 thin film

PLD Grown Polycrystalline Tungsten Disulphide (WS2) Films

3d transition metal doping-induced electronic structures and magnetism in 1T-HfSe2 monolayers

Contact Info

Product

Resources

About

PLD Grown Polycrystalline Tungsten Disulphide (WS₂) Films

3d transition metal doping-induced electronic structures and magnetism in 1T-HfSe₂ monolayers