Wurtzite GaN epitaxial growth on a Si(001) substrate using γ-Al2O3 as an intermediate layer

Wang, Lianshan; Liu, Xianglin; Zan, Yude; Wang, Jun; Wei, Du; Lu, Dongzhu; Wang, Zhanguo

doi:10.1063/1.120660

Cited by 84 publications

(30 citation statements)

References 27 publications

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“…Figure 2 shows the epitaxial relationship of GaN(0001) on Si(111) which is GaN[ , 36, 37]. Due to the missing six-fold symmetry of the surface atoms growth on Si(001) is very difficult and only few publications exist [38][39][40][41][42][43][44][45] .…”

Section: Seed Layermentioning

confidence: 99%

Metalorganic chemical vapor phase epitaxy of gallium‐nitride on silicon

Dadgar

Strittmatter

Bläsing

et al. 2003

phys. stat. sol. (c)

129

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GaN growth on Si is very attractive for low-cost optoelectronics and high-frequency, high-power electronics. It also opens a route towards an integration with Si electronics. Early attempts to grow GaN on Si suffered from large lattice and thermal mismatch and the strong chemical reactivity of Ga and Si at elevated temperatures. The latter problem can be easily solved using gallium-free seed layers as nitrided AlAs and AlN. The key problem for device structure growth on Si is the thermal mismatch leading to cracks for layer thicknesses above 1 µm. Meanwhile, several concepts for strain engineering exist as patterning, Al(Ga)N/GaN superlattices, and low-temperature (LT) AlN interlayers which enable the growth of device-relevant GaN thicknesses. The high dislocation density in the heteropitaxial films can be reduced by several methods which are based on lateral epitaxial overgrowth using ex-situ masking or patterning and by in-situ methods as masking with monolayer thick SiN. With the latter method in combination with strain engineering by LT-AlN interlayers dislocation densities around 109 cm -2 can be achieved for 2.5 µm thick device structures.

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Section: Seed Layermentioning

confidence: 99%

Metalorganic chemical vapor phase epitaxy of gallium‐nitride on silicon

Dadgar

Strittmatter

Bläsing

et al. 2003

phys. stat. sol. (c)

129

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“…Silicon is increasingly being used as a substrate for GaN growth [2,3] GaN deposited on silicon (Si) substrates has great advantages including excellent wafer quality, less hardness and more design flexibility with current silicon electronic circuit system [4][5][6]. The Si substrate for GaN growth has some advantages over other substrates.…”

Section: Introductionmentioning

confidence: 99%

Structural and Electrical Characterization of GaN Thin Films on Si(100)

Chaudhari¹,

Chinchamalatpure²,

Ghosh³

2011

AJAC

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The Gallium Nitride (GaN) layers grown on silicon substrates by electron beam evaporation technique. Xray diffraction revealed that polycrystalline GaN was obtained indicating the enhance crystallinity of the films with annealing temperature at 600˚C. Crystalline quality of the GaN films was determined by Scanning Electron Microscopy (SEM). The crystalline size increases with increasing annealing temperature. The fabricated MIS structures were characterized using Capacitance-Voltage (C-V) measurements, the capacitance remains nearly constant over a large range in higher negative as well as over a large range in higher positive gate voltages and Current-Voltage (I-V) measurements shows low forward and reverse current possibly due to high density defect formation in the thin layer of gallium nitride during its growth.The film is characterized by X-Ray photoelectron spectroscopy (XPS). The XPS spectra show that formation of pure GaN without presence of elemental gallium and Ga 2 O 3 in this film.

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“…However, due to the even larger differences in lattice constant and thermal expansion coefficients between the III-nitrides and silicon as compared with sapphire, it is really difficult to grow high quality epitaxial layers of GaN-based nitrides on a silicon substrate. A lot of attempts have been made to grow III-nitrides on silicon substrates in the past decade using various kinds of materials as intermediate layer, such as AlN [1,2], carbonized silicon [3], nitridized GaAs [4], oxidized AlAs [5], and g-Al 2 O 3 [6]. In particular, by using a thin AlN film as intermediate layer, ultraviolet and violet-light emitting diodes of III-nitride have been fabricated on silicon substrate by molecular beam epitaxy (MBE) [1].…”

Section: Introductionmentioning

confidence: 99%