X- and Ku-band internally matched GaN amplifiers with more than 100W output power

Noto, Hifumi; Maehara, Hiroaki; Uchida, Hirohisa; Koyanagi, M.; Utsumi, Hiromitsu; Nishihara, Jun; Otsuka, Hiroshi; Yamanaka, Koji; Nakayama, Minoru; Hirano, Y.

doi:10.23919/eumc.2012.6459316

Cited by 21 publications

(17 citation statements)

References 9 publications

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“…Current HPAs include the L-band 500 W [1] and S-band 800 W [2], but HPAs with output powers of more than 100 W have been reported even in the high frequency bands (C-, X-and Ku-bands) [3,4]. A power added efficiency (PAE) of 80% is achieved for output power of 16.5 W [5].…”

Section: Introductionmentioning

confidence: 99%

A 2.4 GHz-Band 100 W GaN-HEMT High-Efficiency Power Amplifier for Microwave Heating

Nakatani¹,

Ishizaki²

2015

Journal of electromagnetic engineering and science

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The magnetron, a vacuum tube, is currently the usual high-power microwave power source used for microwave heating. However, the oscillating frequency and output power are unstable and noisy due to the low quality of the high-voltage power supply and low Q of the oscillation circuit. A heating system with enhanced reliability and the capability for control of chemical reactions is desired, because microwave absorption efficiency differs greatly depending on the object being heated. Recent studies on microwave high-efficiency power amplifiers have used harmonic processing techniques, such as class-F and inverse class-F. The present study describes a high-efficiency 100 W GaN-HEMT amplifier that uses a harmonic processing technique that shapes the current and voltage waveforms to improve efficiency. The fabricated GaN power amplifier obtained an output power of 50.4 dBm, a drain efficiency of 72.9%, and a power added efficiency (PAE) of 64.0% at 2.45 GHz for continuous wave operation. A prototype microwave heating system was also developed using this GaN power amplifier. Microwaves totaling 400 W are fed from patch antennas mounted on the top and bottom of the microwave chamber. Preliminary heating experiments with this system have just been initiated. This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/ by-nc/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited. ⓒ

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Section: Introductionmentioning

confidence: 99%

A 2.4 GHz-Band 100 W GaN-HEMT High-Efficiency Power Amplifier for Microwave Heating

Nakatani¹,

Ishizaki²

2015

Journal of electromagnetic engineering and science

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“…In Ku-band, low power of GaAs was addressed with more than 100W output power of GaN ( Fig. 3) [2]. Such high power also contributes to replace TWTAs with GaN devices in SNG systems.…”

Section: Satellite Communication Systemsmentioning

confidence: 99%

“…Mitsubishi Electric has already developed both C-band and X-band GaN based radar systems. 250W C-band GaN amplifier [1] and 120W X-band GaN IM-FETs [2] are developed for this application (Fig. 2).…”

Section: Solid State Weather Radar Systemsmentioning

confidence: 99%

Recent Activities of Japanese Microwave Industry

Yamanaka

Suzuki²,

Narahashi³

et al. 2015

IEICE Trans. Electron.

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“…사용되는 고주 파 전력 트랜지스터의 소자로는 GaAs HEMT, HFET 등이 사용된다. 최근에는 GaN HEMT 같은 화합물 소자들이 주류를 이루고 있으며 [2], [3] , 낮은 주파수에 [5], [6] . 하지만 로드-풀 측정은 측정 장비 세팅의 어려움과 측정 장비의 기생성분의 De-embedding도 매우 어려운 단점이 있다.…”

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C-Band Internally Matched GaAs Power Amplifier with Minimized Memory Effect

Choi¹,

Lee²,

Eo³

2013

The Journal of Korean Institute of Electromagnetic Engineering

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In this paper, a C-band 10 W power amplifier with internally matched input and output matching circuit is designed and fabricated. The used power transistor for the power amplifier is GaAs pHEMT bare-chip. The wire bonding analysis considering the size of the capacitor and the position of transistor pad improves the accurate design. The matching circuit design with the package effect using EM simulation is performed. To reduce the unsymmetry of IMD3 in 2-tone measurement due to the memory effect, the bias circuit minimizing the memory effect is proposed and employed. The measured P 1dB , power gain, and power added efficiency are 39.8～40.4 dBm, 9.7～10.4 dB, and 33.4～38.0 %, respectively. Adopting the proposed bias circuit, the difference between the upper and lower IMD3 is less than 0.76 dB.Key words : IMFET, Memory Effect, C-Band Power Amplifier, GaAs pHEMT . 사용되는 고주 파 전력 트랜지스터의 소자로는 GaAs HEMT, HFET 등이 사용된다. 최근에는 GaN HEMT 같은 화합물 소자들이 주류를 이루고 있으며 [2], [3] , 낮은 주파수에 ⓒ

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X- and Ku-band internally matched GaN amplifiers with more than 100W output power

Cited by 21 publications

References 9 publications

A 2.4 GHz-Band 100 W GaN-HEMT High-Efficiency Power Amplifier for Microwave Heating

A 2.4 GHz-Band 100 W GaN-HEMT High-Efficiency Power Amplifier for Microwave Heating

Recent Activities of Japanese Microwave Industry

C-Band Internally Matched GaAs Power Amplifier with Minimized Memory Effect

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