X-band GaAs mHEMT LNAs with 0.5 dB noise figure

Heins, M.S.; Carroll, James M.; Kao, Ming-Yih; Delaney, J.; Campbell, Carol

doi:10.1109/mwsym.2004.1335827

Cited by 9 publications

(3 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Besides, the LNA has a minimum noise figure of 1.4 dB and the gain of 29 dB. In [5], the monolithic GaAs LNA achieves a very low noise figure of 0.5 dB and 30 dB gain. The frequency range of this LNA is, however, only from 7 to 10 GHz and the output P 1dB is 10 dBm.…”

Section: Introductionmentioning

confidence: 99%

Broadband GaAs pHemt LNA design for T/R module application

Le¹,

Thong²,

Binh³

2016

JST

View full text Add to dashboard Cite

In this paper, a three stages monolithic low noise amplifier for T/R module application is presented. This amplifier is fully integrated on 0.15 µm GaAs pHEMT technology and achieves a wide bandwidth from 6 to 11 GHz. Within this band, the LNA has the minimum of 1.3 dB noise figure and over 25 dB small signal gain. The output third-order intercept point is over 30 dBm and the 1 dB compression point (P 1dB ) is 16 dBm at the output.

show abstract

Section: Introductionmentioning

confidence: 99%

Broadband GaAs pHemt LNA design for T/R module application

Le¹,

Thong²,

Binh³

2016

JST

View full text Add to dashboard Cite

show abstract

“…Low‐noise amplifiers (LNAs) are critical components in any receiver system [1–7]. The performance of microwave systems can be improved with LNAs having lower noise figure and greater gain per stage.…”

Section: Introductionmentioning

confidence: 99%

“…GaAs monolithic microwave integrated circuit (MMIC) technology provides high yield and reliability performances and consequently was widely adopted for realization of circuits and subsystems for microwave and millimeter wave applications. Although some new processes and technology of III–V compounds have been developed to provide better performance, such as metamorphic HMET (mHEMT) on GaAs substrates [1] and InAs/AlSb HEMT [2], but the yield is still a problem and not reliable for commercial use. The silicon substrate technology also can provide good noise and frequency performance as the factor dimension shrinking down.…”

Section: Introductionmentioning

confidence: 99%

A 7‐ to 14‐GHz GaAs pHEMT LNA with 1.1 dB noise figure and 26 dB gain

Peng

Sui

2010

Micro & Optical Tech Letters

View full text Add to dashboard Cite

A three‐stage 7‐ to 14‐GHz monolithic low‐noise amplifier (LNA) has been fabricated using 0.15‐μm AlGaAs/GaAs pHEMT technology.To achieve ultra low noise figure and wide operation bandwidth, the proposed LNA uses wideband matching network and negative feedback technique. Measured results from 7 to 14 GHz demonstrate a minimum of 1.1 dB noise figure and 26 dB gain. The input and output return loss exceeded 10 dB across the band. These results demonstrate the best performance of AlGaAs/GaAs pHEMT technology for wideband and low noise applications. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52:2615–2617, 2010; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25547

show abstract

Broadband X-band low noise amplifier based on 70 nm GaAs metamorphic high electron mobility transistor technology for deep space and satellite communication networks and oscillation issues

Bhaumik

Kettle

2010

IET Microw. Antennas Propag.

View full text Add to dashboard Cite

X-band GaAs mHEMT LNAs with 0.5 dB noise figure

Cited by 9 publications

References 4 publications

Broadband GaAs pHemt LNA design for T/R module application

Broadband GaAs pHemt LNA design for T/R module application

A 7‐ to 14‐GHz GaAs pHEMT LNA with 1.1 dB noise figure and 26 dB gain

Broadband X-band low noise amplifier based on 70 nm GaAs metamorphic high electron mobility transistor technology for deep space and satellite communication networks and oscillation issues

Contact Info

Product

Resources

About