X-band silicon double-drift IMPATT diodes using multiple epitaxy

Ying, R.S.

doi:10.1109/proc.1972.8861

Search citation statements

Order By: Relevance

Paper Sections

Select...

Introduction1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

1974

1978

Publication Types

Select...

Other2

Book2

Article1

Relationship

Self Cite0

Independent5

Authors

Journals

Cited by 10 publications

(1 citation statement)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Several studies [1,2,3] have obtained results which demonstrate the CW oscillator superiority of the double-drift P+PNN+ IMPATT structure over the well known and extensively studied flat-profile P+NN+ devices in terms of both efficiency and power output. The design, performance, and behavior of pulsed as well as CW double-drift devices in the 8 to 38 GHz frequency range are summarized in this paper.…”

Section: Introductionmentioning

confidence: 97%

Design, Performance, and Behavior of Pulsed and CW Silicon Double-Drift Impatts

Snapp

Pfund

Podell

1974

4th European Microwave Conference, 1974

View full text Add to dashboard Cite

Double-drift silicon IMPATTs for high power pulsed and CW applications have been optimized by the proper design of the width and impurity concentration in both the N and P-layers. Peak pulse powers greater than 18 watts at a 25% duty cycle were obtained at 10 GHz with the junction temperature rise limited to 2000C. For similar temperature rises CW powers of 3.4 watts at 11.5 GHz and 4.2 watts at 8.5 GHz were achieved. Conversion efficiencies were between 10.5 and 13.7%. Some detailed measurements of the large-signal conductance and FM noise of the CW devices are presented.

show abstract

Section: Introductionmentioning

confidence: 97%