X-ray Detectors Based on Ga2O3 Microwires

Abstract

X-ray detectors have numerous applications in medical imaging, industrial inspection, and crystal structure analysis. Gallium oxide (Ga2O3) shows potential as a material for high-performance X-ray detectors due to its wide bandgap, relatively high mass attenuation coefficient, and resistance to radiation damage. In this study, we present Sn-doped Ga2O3 microwire detectors for solar-blind and X-ray detection. The developed detectors exhibit a switching ratio of 1.66 × 102 under X-ray irradiation and can operate stably from room temperature to 623 K, which is one of the highest reported operating temperatures for Ga2O3 X-ray detectors to date. These findings offer a promising new direction for the design of Ga2O3-based X-ray detectors.

Wide-Bandgap Semiconductors for Radiation Detection: A Review

“…At the end, we will briefly mention a different but still promising approach. Instead of standard devices such as SBD or MSM, Zhang et al [62] have used Sn-doped β-Ga 2 O 3 microwires (MWs) to fabricate the X-ray detectors. The Sn-doped Ga 2 O 3 MWs were synthesized using chemical vapor deposition in a tube furnace and then transferred onto a sapphire substrate.…”

4H-SiC Schottky Barrier Diodes as Radiation Detectors: A Review

“…At the end, we will briefly mention a different but still promising approach. Zhang et al [59] have used the Sn-doped β-Ga2O3 microwires and fabricated X-ray detectors. The fabricated detector exhibits stability over extended temperature ranges, from room temperature to 623 K which is one of the highest reported operating temperatures for β-Ga2O3 X-ray detectors.…”

Structural and Photoelectronic Properties of κ-Ga2O3 Thin Films Grown on Polycrystalline Diamond Substrates

“…Similar values of energy bandgap imply similar optical absorption properties, as well as close energy values for electron-hole pair creation under ionizing radiation (approximately equal to E i = 2E g + 1.43 according to an empirical model [5] used to successfully predict E i for most semiconductors). For this reason, highperformance optoelectronic devices where solar blindness and/or extremely low dark current are mandatory requirements, such as high-responsivity deep-UV photodetectors for space and safety applications [6][7][8] or fast-sensitive detectors for X-ray imaging and Materials 2024, 17, 519 2 of 13 dosimetry [9][10][11], have been equivalently developed with both Ga 2 O 3 and diamond as active materials. On the other hand, some properties of Ga 2 O 3 and diamond can be considered complementary in certain respects.…”