X-ray diffraction investigations of annealing characteristics in P+-implanted silicon crystals

Abstract

The crystal lattice deformation in 200 keV phosphorus‐implanted (doses: 1 × 1013, 5 × 1013, 5 × 1014, 1 × 1015, 5 × 1015 ions/cm2) and then annealed silicon crystals is investigated by means of X‐ray diffraction methods the: Lang technique, X‐ray section topography, and double‐crystal reflection topography. The boundary diffraction contrast and the area contrast as well as a contraction of the Kato fringe period are observed. Radiation damage is completely annealed out at 850°C for small doses (1 × 1013 and 5 × 1013 ions/cm2). A strong dependence of annealing characteristics of the diffraction contrast on the dose rate for higher doses is observed.