X-ray diffraction peaks due to misfit dislocations in heteroepitaxial structures

Kaganer, Vladimir M.; Köhler, R.; Schmidbauer, M.; Opitz, R.; Jenichen, B.

doi:10.1103/physrevb.55.1793

Cited by 332 publications

(306 citation statements)

References 21 publications

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“…The elastic deformation induced by the presence of a dislocation can be computed within a continuum approach by means of the linear elasticity theory. Indeed, analytic functions are known for both bulk materials [238] and flat films [239][240][241]. An example of this latter case is reported in Figure 9(b) for the ε xx component.…”

Section: Dislocationsmentioning

confidence: 99%

Continuum modelling of semiconductor heteroepitaxy: an applied perspective

Bergamaschini

Salvalaglio

Backofen

et al. 2016

Advances in Physics: X

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Semiconductor heteroepitaxy involves a wealth of qualitatively different, competing phenomena. Examples include threedimensional island formation, injection of dislocations, mixing between film and substrate atoms. Their relative importance depends on the specific growth conditions, giving rise to a very complex scenario. The need for an optimal control over heteroepitaxial films and/or nanostructures is widespread: semiconductor epitaxy by molecular beam epitaxy or chemical vapour deposition is nowadays exploited also in industrial environments. Simulation models can be precious in limiting the parameter space to be sampled while aiming at films/nanostructures with the desired properties. In order to be appealing (and useful) to an applied audience, such models must yield predictions directly comparable with experimental data. This implies matching typical time scales and sizes, while offering a satisfactory description of the main physical driving forces. It is the aim of the present review to show that continuum models of semiconductor heteroepitaxy evolved significantly, providing a promising tool (even a working tool, in some cases) to comply with the above requirements. Several examples, spanning from the nanometre to the micron scale, are illustrated. Current limitations and future research directions are also discussed.

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Section: Dislocationsmentioning

confidence: 99%

Continuum modelling of semiconductor heteroepitaxy: an applied perspective

Bergamaschini

Salvalaglio

Backofen

et al. 2016

Advances in Physics: X

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show abstract

“…Explicit expressions for the components w xx ðzÞ, w zz ðzÞ, w xz ðzÞ ¼ w zx ðzÞ of the tensorŵ wðzÞ are provided by Kaganer et al (1997).…”

Section: Theorymentioning

confidence: 99%

“…To estimate the theoretical dependence of the peak shape and width on the sample parameters, we make use of the model provided in the work of Kaganer et al (1997). The shape of the layer peak is determined by the following equation:…”

Section: Theorymentioning

confidence: 99%

“…We follow the approach developed by Kaganer et al (1997), to perform the analysis of RSMs from partially relaxed structures, namely, to evaluate the dislocation density and the correlation coefficient of dislocation, .…”

Section: Theorymentioning

confidence: 99%

“…A fast method to determine the relaxation and Ge content was suggested by Zaumseil (1994) on the basis of !-2 scans using BraggBrentano geometry. Based on the theory developed by Kaganer et al (1997) it is possible to find quantitatively from the shape of a high-resolution RSM peak possessing no thickness fringes additional parameters such as misfit dislocation density and layer thickness.…”

Section: Introductionmentioning

confidence: 99%

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Characterization of SiGe thin films using a laboratory X-ray instrument

et al. 2013

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The technique of reciprocal space mapping using X-rays is a recognized tool for the nondestructive characterization of epitaxial films. X-ray scattering from epitaxial Si 0.4 Ge 0.6 films on Si(100) substrates using a laboratory X-ray source was investigated. It is shown that a laboratory source with a rotating anode makes it possible to investigate the material parameters of the super-thin 2-6 nm layers. For another set of partially relaxed layers, 50-200 nm thick, it is shown that from a high-resolution reciprocal space map, conditioned from diffuse scattering on dislocations, it is possible to determine quantitatively from the shape of a diffraction peak (possessing no thickness fringes) additional parameters such as misfit dislocation density and layer thickness as well as concentration and relaxation.

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Studies of Misfit Dislocation Densities in II-VI Laser Structures by Diffuse X-Ray Scattering

Alexe

Heinke

Klude

et al. 2002

phys. stat. sol. (b)

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Subject classification: 61.72. Dd; 68.55.Ln; S8.12 ZnSe-based laser structures grown on GaAs(001) substrates were studied by high resolution X-ray diffraction. Extended diffuse scattering observed in reciprocal space maps was found to be caused by misfit dislocations located at the interface between the p-type doped ZnSSe spacer on top of the p-type cladding layer and the subsequent ZnSe layer. Linear densities of dislocations are estimated by simulations.Introduction Dislocation densities in epitaxial heterostructures are usually estimated from etch pit densities or by transmission electron microscopy. As a nondestructive method, diffuse scattering is used to qualitatively describe modifications in defect densities via changes in the characteristic scattering patterns [1,2]. Different models were used in order to quantitatively exploit diffuse scattering, for instance, to study the thermally induced increase in linear misfit dislocations in early stages of relaxation in SiGe layers deposited on Si(001) [3]. While most of the previous studies on diffuse scattering where focused on single layers, we present a detailed study for complex heterostructures. In particular, we studied a series of II-VI semiconductor laser structures.

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X-ray diffraction peaks due to misfit dislocations in heteroepitaxial structures

Cited by 332 publications

References 21 publications

Continuum modelling of semiconductor heteroepitaxy: an applied perspective

Continuum modelling of semiconductor heteroepitaxy: an applied perspective

Characterization of SiGe thin films using a laboratory X-ray instrument

Studies of Misfit Dislocation Densities in II-VI Laser Structures by Diffuse X-Ray Scattering

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