X-ray diffraction study of GaSb grown by molecular beam epitaxy on silicon substrates

Rodriguez, J. B.; Madiomanana, K.; Cerutti, L.; Castellano, A.; Tournié, E.

doi:10.1016/j.jcrysgro.2016.01.005

Cited by 34 publications

(27 citation statements)

References 18 publications

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“…A rocking curve of the sample was also measured, which allowed us to estimate the GaSb FWHM at 295 arcsec, close to the values mentioned in the literature review. The measured value is very similar to the best ones reported in [21] and around 100-200 arcsec higher than the ones reported for Ge-on-Si [22] and GaAs-on-Si [23]. Finally, the morphology of the sample was assessed with AFM ( Fig.…”

Section: Gasb-on-gasb Control Solar Cellsupporting

confidence: 83%

“…4.(b)). The RMS roughness was evaluated at 2 nm (size of the scan: 10 µm x 10 µm), again close to the values mentioned in the literature (in the lower range of [21], still above the <1 nm of [22]). As a baseline for comparison, according to our own measurements on such samples, the typical value of RMS roughness for a homoepitaxial GaSb-on-GaSb structure is in the 0.1 nm (sub-monolayer) range.…”

Section: Gasb-on-gasb Control Solar Cellsupporting

confidence: 59%

“…Akahane et al also highlighted the contribution of the AlSb nucleation layer in terms of surface morphology [20]. Rodriguez et al further showed that the optimal nucleation conditions were 4 ML of AlSb grown at 450°C [21]. Post-growth annealing proved to further enhance the material quality, lowering the FWHM value down to 235 arcsec for a 1 µm GaSb-on-AlSb-on-Si layer, close to values obtained for similar thicknesses of Ge-on-Si [22] and GaAs-on-Si [23].…”

Section: Monolithic Integration Of Iii-sb On Simentioning

confidence: 99%

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GaSb-based solar cells for multi-junction integration on Si substrates

Tournet

Parola

Vauthelin

et al. 2019

Solar Energy Materials and Solar Cells

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We report on the first single-junction GaSb solar cell epitaxially grown on a Si substrate. A control stand-alone GaSb solar cell was primarily fabricated, which demonstrated a 5.90% efficiency (AM1.5G). The preparation, growth and manufacturing procedures were then adapted to create the GaSb-on-Si solar cell. The hybrid device resulted in a degraded efficiency for which comparison between experimental and simulated data revealed dominant non-radiative recombination processes. Material and electrical characterization also highlighted the impact of anti-phase domains and boundaries and threading dislocation density on the shunt resistance of the cell. Nevertheless, the GaSb-on-Si cell performance is close to recent results on the integration of GaSb solar cells on GaAs, despite a much larger lattice mismatch (12% vs 8%). Routes for improvement, concerning the material quality and cell structure, are proposed. This work lays the foundations of a GaSb-based multi-junction solar cell monolithically integrated on Si.

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Section: Gasb-on-gasb Control Solar Cellsupporting

confidence: 83%

Section: Gasb-on-gasb Control Solar Cellsupporting

confidence: 59%

Section: Monolithic Integration Of Iii-sb On Simentioning

confidence: 99%

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GaSb-based solar cells for multi-junction integration on Si substrates

Tournet

Parola

Vauthelin

et al. 2019

Solar Energy Materials and Solar Cells

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“…The low growth temperatures used for the growth can explain the poor organization of the two misfit dislocations networks. direction (the growth direction) and the y axis in the [1][2][3][4][5][6][7][8][9][10] direction. The thin foil is prepared in the [1-10] zone axis.…”

Section: Microstructure Of the Gasb On Gaas-on-si Samplesmentioning

confidence: 99%

Molecular-beam epitaxy of GaSb on 6°-offcut (0 0 1) Si using a GaAs nucleation layer

Calvo

Rodriguez

Cerutti

et al. 2020

Journal of Crystal Growth

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We studied and optimized the molecular beam epitaxy of GaSb layers on vicinal (001) Si substrates using a GaAs nucleation layer. An in-depth analysis of the different growth stages under optimized conditions revealed the formation of a high density of small GaAs islands forming a quasi-twodimensional layer. GaSb then nucleated atop this layer as three-dimensional islands before turning to two-dimensional growth within a few nanometers. Moreover, reflexion high-energy electron diffraction revealed a fast relaxation of GaAs on Si and of GaSb on GaAs. The GaSb layer quality was better than that of similar layers grown on Si through AlSb nucleation layers.

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“…Attempts to grow GaSb directly on (001) Si have proved to be challenging due to the even larger lattice mismatch of 12.2% and the polar-on-nonpolar interface. The prevailing molecular beam epitaxy (MBE) approach is to deposit an ultra-thin AlSb nucleation layer on Si [7][8][9][10] such that a periodic array of Lomer misfit dislocations, akin to those in the IMF growth of GaSb on GaAs, can be created. However, growing AlSb and related alloys using metal-organic chemical vapor deposition (MOCVD) remains one of the most challenging tasks in all III-V epitaxial material technologies.…”

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confidence: 99%

Epitaxial growth of GaSb on V-grooved Si (001) substrates with an ultrathin GaAs stress relaxing layer

Lai

Lau

2017

Applied Physics Letters

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We report epitaxial growth of GaSb nano-ridge structures and planar thin films on V-groove patterned Si (001) substrates by leveraging the aspect ratio trapping technique. GaSb was deposited on {111} Si facets of the V-shaped trenches using metal-organic chemical vapor deposition with a 7 nm GaAs growth initiation layer. Transmission electron microscopy analysis reveals the critical role of the GaAs layer in providing a U-shaped surface for subsequent GaSb epitaxy. A network of misfit dislocations was uncovered at the GaSb/GaAs hetero-interface. We studied the evolution of the lattice relaxation as the growth progresses from closely pitched GaSb ridges to coalesced thin films using x-ray diffraction. The omega rocking curve full-width-at-half-maximum of the resultant GaSb thin film is among the lowest values reported by molecular beam epitaxy, substantiating the effectiveness of the defect necking mechanism. These results thus present promising opportunities for the heterogeneous integration of devices based on 6.1 Å family compound semiconductors.

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X-ray diffraction study of GaSb grown by molecular beam epitaxy on silicon substrates

Cited by 34 publications

References 18 publications

GaSb-based solar cells for multi-junction integration on Si substrates

GaSb-based solar cells for multi-junction integration on Si substrates

Molecular-beam epitaxy of GaSb on 6°-offcut (0 0 1) Si using a GaAs nucleation layer

Epitaxial growth of GaSb on V-grooved Si (001) substrates with an ultrathin GaAs stress relaxing layer

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X-ray diffraction study of GaSb grown by molecular beam epitaxy on silicon substrates

Cited by 34 publications

References 18 publications

GaSb-based solar cells for multi-junction integration on Si substrates

GaSb-based solar cells for multi-junction integration on Si substrates

Molecular-beam epitaxy of GaSb on 6°-offcut (0 0 1) Si using a GaAs nucleation layer

Epitaxial growth of GaSb on V-grooved Si (001) substrates with an ultrathin GaAs stress relaxing layer

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Molecular-beam epitaxy of GaSb on 6°-offcut (0 0 1) Si using a GaAs nucleation layer