X-ray high-resolution diffraction and reflectivity studies of defects related to the mechanical treatment of single crystals

Abstract

Triple-crystal x-ray diffractometry and x-ray reflectometry have been used to determine defects in epi-ready wafers caused by mechanical treatment. Reciprocal space maps around the 400 lattice point were separately made for mechanically polished wafers before and after etching treatment. The lattice imperfections have been studied by measuring the diffusion scattering. The surface morphology has been controlled by means of x-ray reflectometry. It was shown that measurements of diffuse scattering could be made with good sensitivity in a reasonable time when there was a moderate difference between the d spacing of the sample and the monochromator.

Reciprocal Space Mapping and Reflectivity Investigations of Epi-Ready InP Substrate

“…For the sample (004)InP, there is a quasi-parallel setting because of (004)Ge monochromators. The parameters of the presently used setup were presented in a previous work [2].…”

“…That is the reason for paying special attention to the preparation of best-quality controllable substrate surfaces. The triple crystal X-ray investigations reveal the residual defects even after the best mechanical treatment [1,2]. Then, a very gentle etching procedure after mechanical treatment seems to be advisable [2].…”

“…The triple crystal X-ray investigations reveal the residual defects even after the best mechanical treatment [1,2]. Then, a very gentle etching procedure after mechanical treatment seems to be advisable [2]. But it is not easy to find such a procedure which reduces the structural imperfection and does not increase the roughness.…”