X P S and APS Studies of V,Si a BY P. 0. NILSSON, I. CURELARU, and T. JARLBORGThe occupied and unoccupied parts of t,he valence band of V,Si single cryst.al are studied by means of XPS and APS techniques, respectively. Agreement with calculated band structure data is obtained.On a ktudik la part occupke et non-occuph de la bande de valence du V,Si monocrystalline, par des mkthodes XPS et APS, respectivement. On a obtenu une bonne concordance avec la structure de la bande calculke.